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    • 3. 发明申请
    • METHOD OF MANUFACTURING ANNULAR BODY
    • 制造环形体的方法
    • US20120077420A1
    • 2012-03-29
    • US13022205
    • 2011-02-07
    • Hiroshi SHIBUYAYoshitake OGURAMasato SAITO
    • Hiroshi SHIBUYAYoshitake OGURAMasato SAITO
    • B24C1/06B24C1/00
    • B24C1/06
    • A method includes: charging a polishing material into a polishing apparatus that polishes a surface of a cylindrical film including a resin; alternately and repeatedly performing a surface-roughening operation of causing the polishing material to collide with the surface of the cylindrical film, thereby roughening the surface, and a cylindrical film replacing operation of replacing the cylindrical film on which roughening of the surface has been completed with another cylindrical film on which roughening of the surface has not been completed; replacing the polishing material by partially discharging the polishing material, and charging a new polishing material so that the percentage of the new polishing material with respect to the total amount of the polishing material after the new polishing material is charged becomes 30% by weight or more; and alternately and repeatedly performing the surface-roughening operation and the cylindrical film replacing operation again.
    • 一种方法包括:将抛光材料装入抛光装置中,抛光装置对包括树脂的圆柱形膜的表面进行抛光; 交替重复进行表面粗糙化操作,使抛光材料与圆筒形膜的表面碰撞,从而使表面变粗糙,并且更换已经完成表面粗糙化的圆筒形膜的圆柱形膜更换操作, 另一个圆柱形薄膜,其表面的粗糙化尚未完成; 通过部分地抛光抛光材料来代替抛光材料,并且对新的抛光材料进行充电,使得新抛光材料相对于新抛光材料被加料后的研磨材料的总量的百分数为30重量%以上 ; 并且再次交替重复地执行表面粗糙化操作和圆筒形膜替换操作。
    • 8. 发明申请
    • PHOTOMASK, SEMICONDUCTOR DEVICE, AND CHARGED BEAM WRITING APPARATUS
    • PHOTOMASK,SEMICONDUCTOR DEVICE,AND CHARGED BEAM WRITING APPARATUS
    • US20100237469A1
    • 2010-09-23
    • US12726052
    • 2010-03-17
    • Masato SAITOHidehiro WATANABE
    • Masato SAITOHidehiro WATANABE
    • H01L23/544H01J37/317H01J37/147H01J37/302G06F17/50
    • H01J37/3026B82Y10/00B82Y40/00G03F1/68G03F1/78H01J37/3174
    • A photomask has a pattern formed by writing of a charged beam on basis of a charged beam control data. The charged beam control data is produced by: setting a plurality of correction points in a writing area on pattern data; performing a simulation of writing with a charged beam on basis of the pattern data to divide the writing area, at time of writing each of the correction points, into a written area of writing been already completed and an unwritten area of writing yet to be performed; deriving, for each of the correction points, a first charging amount distribution due to a fogging effect around each of the correction points using a subset of the pattern data belonging to the written area; deriving, for each of the correction points, a second charging amount distribution modified from the first charging amount distribution on basis of an effect by which the charging amount due to the fogging effect is reduced at a position irradiated with the charged beam; deriving amount of pattern displacement at each of the correction points on basis of the second charging amount distribution; and deriving correction parameters of pattern position on basis of the amount of pattern displacement.
    • 光掩模具有基于带电波束控制数据写入带电波束形成的图案。 带电波束控制数据通过以下方式产生:在图形数据上的写入区域中设置多个校正点; 在写入每个校正点的时候,根据图形数据执行用充电波束写入的模拟,以将写入区域写入已经完成的写入区域和尚未执行的写入区域 ; 对于每个校正点,使用属于所述写入区域的图案数据的子集,得出由于每个所述校正点周围的起雾效应引起的第一充电量分布; 对于每个校正点,根据在被充电束照射的位置减少由于起雾效果引起的充电量的效果,导出从第一充电量分布修改的第二充电量分布; 基于第二充电量分布导出每个校正点处的图案位移量; 并基于图案位移量导出图案位置的校正参数。
    • 10. 发明申请
    • TEMPLATE FORMING METHOD
    • 模板形成方法
    • US20110318501A1
    • 2011-12-29
    • US13051883
    • 2011-03-18
    • Masato SAITO
    • Masato SAITO
    • B05D5/00B05D3/06C08J7/04
    • G03F7/0002B82Y10/00B82Y40/00
    • According to one embodiment, there is provided a template forming method that transfers a pattern from a first template to a to-be-processed substrate and subjects the to-be-processed substrate to a processing process to form a second template by using an imprinting method, includes forming a first resist film on a pattern forming region on the to-be-processed substrate, selectively forming a second resist film on a mark forming region on the to-be-processed substrate, transferring a concavo-convex pattern formed on the first template to the first resist film, and processing the to-be-processed substrate with the first resist film to which the concavo-convex pattern is transferred and the second resist film used as a mask.
    • 根据一个实施例,提供了一种模板形成方法,其将图案从第一模板转移到待处理衬底,并使待处理衬底经受处理过程以通过使用压印形成第二模板 方法包括在待处理衬底上的图案形成区域上形成第一抗蚀剂膜,在被处理衬底的标记形成区上选择性地形成第二抗蚀剂膜,将形成在 将第一模板涂覆到第一抗蚀剂膜上,并且将第一抗蚀剂膜以凹凸图案转印并将第二抗蚀剂膜用作掩模来处理待处理的基板。