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1. 发明授权

US09631295B2 Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method 有权
公开(公告)号：US09631295B2
公开(公告)日：2017-04-25
申请号：US14006640
申请日：2011-07-27
申请人： Hironori Daikoku , Kazuhito Kamei
发明人： Hironori Daikoku , Kazuhito Kamei
IPC分类号： C30B15/22 , C30B29/36 , C30B19/04 , C30B19/06 , C30B19/12 , C30B17/00
CPC分类号： C30B15/22 , C30B17/00 , C30B19/04 , C30B19/061 , C30B19/12 , C30B29/36 , Y10T117/1032
摘要： Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.

2. 发明申请

US20130284083A1 MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶的制造装置及制造SiC单晶的方法
公开(公告)号：US20130284083A1
公开(公告)日：2013-10-31
申请号：US13997722
申请日：2011-12-26
申请人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kasunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
发明人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kasunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
IPC分类号： C30B15/20 , C30B15/14 , C30B15/30
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1 (1) where, D1 is defined by Formula (2), and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2 (2) D2=503292×(1/(f×σs×μs))1/2 (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs relative permeability of the SiC solution.
摘要翻译： SiC单晶的制造装置具有用于控制感应加热的控制单元，使得要传递到感应加热单元的交流电流的频率f（Hz）满足公式（1）; D1（mm）是电磁波通过加热单元进入坩埚侧壁的渗透深度，D2（mm）是电磁波向SiC溶液的渗透深度，T（mm）是坩埚侧壁的厚度坩埚和R（mm）是坩埚内半径：（D1-T）×D2 / R> 1（1）其中，D1由式（2）定义，D2由式（3）定义：D1 = 503292×（ 1 /（f×sigmac×muc））1/2（2）D2 = 503292×（1 /（f×sigmas×mus））1/2（3） sigmac是侧壁的导电率（S / m），sigmas是SiC溶液的导电率（S / m）; 粘液是侧壁的相对渗透率，并且是SiC溶液的相对磁导率。

3. 发明授权

US09702056B2 Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus 有权
公开(公告)号：US09702056B2
公开(公告)日：2017-07-11
申请号：US14126942
申请日：2012-06-11
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B15/10 , C30B35/00 , C30B19/02 , C30B29/36 , C30B17/00 , C30B19/08
CPC分类号： C30B15/10 , C30B17/00 , C30B19/02 , C30B19/08 , C30B29/36 , C30B35/00 , Y10T117/1032
摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

4. 发明授权

US09512540B2 Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere 有权
标题翻译：使用混合气体气氛通过溶液生长制造N型SiC单晶的方法
公开(公告)号：US09512540B2
公开(公告)日：2016-12-06
申请号：US13883350
申请日：2011-11-04
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
IPC分类号： C30B15/20 , C30B17/00 , C30B19/02 , C30B29/36 , C30B15/10 , C30B15/30 , C30B15/36
CPC分类号： C30B15/20 , C30B15/10 , C30B15/30 , C30B15/36 , C30B17/00 , C30B19/02 , C30B29/36
摘要： A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译：制造n型SiC单晶的方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。一种方法包括以下步骤：提供一种制造装置（100），该制造装置（100）包括具有坩埚（7）将被设置的区域的腔室（1）加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在排气之后用包含惰性气体和氮气的混合气体填充室（1）; 加热和熔化容纳在所述区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。

5. 发明授权

US09388508B2 Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal 有权
标题翻译： SiC单晶的制造装置，制造装置中使用的夹具以及SiC单晶的制造方法
公开(公告)号：US09388508B2
公开(公告)日：2016-07-12
申请号：US13997766
申请日：2011-12-26
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
IPC分类号： C30B11/04 , C30B15/32 , C30B19/06 , C30B29/36
CPC分类号： C30B15/32 , C30B19/06 , C30B29/36 , Y10T117/1032 , Y10T117/1072
摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).
摘要翻译：提供了可以抑制多晶体的产生的SiC单晶的制造装置。夹具（41）和坩埚（6）容纳在腔室（1）中。将SiC溶液（8）容纳在坩埚（6）中。夹具（41）包括种子轴（411）和盖构件（412）。种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。盖构件（412）附接到种子轴（411）的下端部。盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

6. 发明申请

US20130305981A1 MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶的制造设备，用于制造设备的制造方法以及制造SiC单晶的方法
公开(公告)号：US20130305981A1
公开(公告)日：2013-11-21
申请号：US13997766
申请日：2011-12-26
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Motohisa Kado , Hidemitsu Sakamoto , Hironori Daikoku
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , C30B19/06 , C30B29/36 , Y10T117/1032 , Y10T117/1072
摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).
摘要翻译：提供了可以抑制多晶体的产生的SiC单晶的制造装置。夹具（41）和坩埚（6）容纳在腔室（1）中。将SiC溶液（8）容纳在坩埚（6）中。夹具（41）包括种子轴（411）和盖构件（412）。种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。盖构件（412）附接到种子轴（411）的下端部。盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

7. 发明申请

US20140007807A1 METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE 有权
标题翻译：生产SIC单晶和生产装置的方法
公开(公告)号：US20140007807A1
公开(公告)日：2014-01-09
申请号：US14006640
申请日：2011-07-27
申请人： Hironori Daikoku , Kazuhito Kamei
发明人： Hironori Daikoku , Kazuhito Kamei
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B17/00 , C30B19/04 , C30B19/061 , C30B19/12 , C30B29/36 , Y10T117/1032
摘要： Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.
摘要翻译：本发明提供一种用于制造SiC单晶的方法，同时保持温度梯度，使得从石墨坩埚内的Si溶液的温度降低到溶液表面，与溶液表面接触的SiC晶种作为起始点晶种生长，其中当作为SiC单晶生长起始点的SiC晶种的晶体生长表面与溶液表面接触时，溶液向SiC晶种侧升高的高度在从晶体生长面生长的SiC单晶和从侧面生长的SiC单晶作为一个SiC单晶单元生长的范围。还提供了一种用于制造包括石墨坩埚的SiC单晶的装置，用于在坩埚中加热和熔化基材以形成基材溶液并保持SiC单晶生长所需的温度梯度的加热装置，支撑杆其在其底端保持SiC晶种，以及保持结构，其保持由支撑杆保持，使得溶液升高到SiC晶种侧的高度在SiC单晶的范围内，已经从晶体生长表面生长，并且从侧面生长的SiC单晶作为一个SiC单晶单元生长。

8. 发明授权

US09783911B2 Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus 有权
公开(公告)号：US09783911B2
公开(公告)日：2017-10-10
申请号：US14410969
申请日：2013-07-15
申请人： Nobuyoshi Yashiro , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuhiro Okada , Koji Moriguchi , Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado
发明人： Nobuyoshi Yashiro , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuhiro Okada , Koji Moriguchi , Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado
IPC分类号： C30B19/02 , C30B15/10 , C30B19/04 , C30B19/06 , C30B29/36 , C30B15/32
CPC分类号： C30B15/10 , C30B15/32 , C30B19/04 , C30B19/067 , C30B29/36 , Y10T117/1032
摘要： A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

9. 发明申请

US20140116325A1 PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SiC SINGLE CRYSTAL USING THE PRODUCTION APPARATUS, AND CRUCIBLE USED IN THE PRODUCTION APPARATUS 有权
标题翻译：通过溶液生长方法生产SiC单晶的生产方法，使用生产设备生产SiC单晶的方法，以及在生产设备中使用的可溶性碳纳米管
公开(公告)号：US20140116325A1
公开(公告)日：2014-05-01
申请号：US14126942
申请日：2012-06-11
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidamisu Kasamoto
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidamisu Kasamoto
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B17/00 , C30B19/02 , C30B19/08 , C30B29/36 , C30B35/00 , Y10T117/1032
摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.
摘要翻译：在SiC晶种附近的SiC溶液的区域被冷却，同时抑制SiC溶液的周边区域的温度变化。一种装置包括种子轴和用于SiC溶液的坩埚。种子轴具有用于连接到SiC晶种的下端表面。坩埚包括主体，中间盖和顶盖。主体包括在第一圆筒部的下端部的第一圆筒部和底部。中间盖在主体内的第一圆柱形部分内和SiC溶液的液面之上。中间盖具有用于种子轴的第一通孔。顶盖设置在中间盖的上方，并且具有用于种子轴穿过的第二通孔。

10. 发明授权

US09732441B2 Production apparatus and production method of SiC single crystal 有权
公开(公告)号：US09732441B2
公开(公告)日：2017-08-15
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B9/00 , C30B35/00 , C30B9/10 , C30B29/36 , C30B15/32 , C30B17/00 , C30B11/00 , C30B19/06 , C30B19/08
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

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