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1. 发明授权

US08373499B2 Semiconductor integrated circuit having normal mode and self-refresh mode 有权
标题翻译：具有正常模式和自刷新模式的半导体集成电路
公开(公告)号：US08373499B2
公开(公告)日：2013-02-12
申请号：US12844450
申请日：2010-07-27
申请人： Koji Moriguchi , Toshio Takahashi
发明人： Koji Moriguchi , Toshio Takahashi
IPC分类号： G05F3/02
CPC分类号： G11C11/40615 , G11C11/4074 , G11C2211/4067
摘要： An SDRAM includes a DC-DC converter IC for generating a first internal power supply voltage from external power supply voltage, a regulator IC for generating a second internal power supply voltage lower than the first internal power supply voltage, from external power supply voltage, and a switching portion for supplying the first internal power supply voltage to an internal circuit in a normal operation mode and supplying the second internal power supply voltage to the internal circuit in a self-refresh mode. The switching unit allows the DC-DC converter IC and the regulator IC to operate simultaneously only for a prescribed overlapped period, at a time of operation mode switching. The DC-DC converter IC temporarily increases the first internal power supply voltage within the operating voltage range of the internal circuit in the overlapped period.
摘要翻译： SDRAM包括用于从外部电源电压产生第一内部电源电压的DC-DC转换器IC，用于从外部电源电压产生低于第一内部电源电压的第二内部电源电压的调节器IC，以及开关部分，用于以正常操作模式将第一内部电源电压提供给内部电路，并以自刷新模式将第二内部电源电压提供给内部电路。开关单元允许DC-DC转换器IC和调节器IC在操作模式切换时同时操作规定的重叠周期。 DC-DC转换器IC在重叠期间临时增加内部电路的工作电压范围内的第一内部电源电压。

2. 发明申请

US20110018620A1 Semiconductor Integrated Circuit Having Normal Mode And Self-Refresh Mode 有权
标题翻译：具有正常模式和自刷新模式的半导体集成电路
公开(公告)号：US20110018620A1
公开(公告)日：2011-01-27
申请号：US12844450
申请日：2010-07-27
申请人： Koji MORIGUCHI , Toshio TAKAHASHI
发明人： Koji MORIGUCHI , Toshio TAKAHASHI
IPC分类号： G05F3/02
CPC分类号： G11C11/40615 , G11C11/4074 , G11C2211/4067
摘要： An SDRAM includes a DC-DC converter IC for generating a first internal power supply voltage from external power supply voltage, a regulator IC for generating a second internal power supply voltage lower than the first internal power supply voltage, from external power supply voltage, and a switching portion for supplying the first internal power supply voltage to an internal circuit in a normal operation mode and supplying the second internal power supply voltage to the internal circuit in a self-refresh mode. The switching unit allows the DC-DC converter IC and the regulator IC to operate simultaneously only for a prescribed overlapped period, at a time of operation mode switching. The DC-DC converter IC temporarily increases the first internal power supply voltage within the operating voltage range of the internal circuit in the overlapped period.
摘要翻译： SDRAM包括用于从外部电源电压产生第一内部电源电压的DC-DC转换器IC，用于从外部电源电压产生低于第一内部电源电压的第二内部电源电压的调节器IC，以及开关部分，用于以正常操作模式将第一内部电源电压提供给内部电路，并以自刷新模式将第二内部电源电压提供给内部电路。开关单元允许DC-DC转换器IC和调节器IC在操作模式切换时同时操作规定的重叠周期。 DC-DC转换器IC在重叠期间临时增加内部电路的工作电压范围内的第一内部电源电压。

3. 发明授权

US06768188B2 Semiconductor device 有权
公开(公告)号：US06768188B2
公开(公告)日：2004-07-27
申请号：US10464752
申请日：2003-06-19
申请人： Koji Moriguchi
发明人： Koji Moriguchi
IPC分类号： H01L23495
CPC分类号： H01L24/40 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L2224/32245 , H01L2224/371 , H01L2224/4007 , H01L2224/40245 , H01L2224/83801 , H01L2224/84801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01082 , H01L2924/12036 , H01L2924/181 , H01L2924/30105 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： There is provided a semiconductor device in a package structure that can improve reliability. The semiconductor device comprises a semiconductor chip having an upper electrode and a lower electrode formed thereon; a package base bonded to the lower electrode on the semiconductor chip; and a metallic strap having first and second ends bonded through solders to the upper electrode on the semiconductor chip and a package lead. The first end of the metallic strap is bonded to the upper electrode in such a manner that a gap therebetween gradually becomes wider in a portion close to the semiconductor chip's edge toward said second end of said metallic strap.

4. 发明授权

US09783911B2 Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus 有权
公开(公告)号：US09783911B2
公开(公告)日：2017-10-10
申请号：US14410969
申请日：2013-07-15
申请人： Nobuyoshi Yashiro , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuhiro Okada , Koji Moriguchi , Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado
发明人： Nobuyoshi Yashiro , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuhiro Okada , Koji Moriguchi , Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado
IPC分类号： C30B19/02 , C30B15/10 , C30B19/04 , C30B19/06 , C30B29/36 , C30B15/32
CPC分类号： C30B15/10 , C30B15/32 , C30B19/04 , C30B19/067 , C30B29/36 , Y10T117/1032
摘要： A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

5. 发明授权

US06764767B2 Graphite powders suited for negative electrode material of lithium ion secondary battery 失效
标题翻译：适用于锂离子二次电池负极材料的石墨粉
公开(公告)号：US06764767B2
公开(公告)日：2004-07-20
申请号：US09292834
申请日：1999-04-16
申请人： Koji Moriguchi , Mitsuhara Yonemura , Kazuhito Kamei , Masaru Abe , Hideya Kaminaka , Noriyuki Negi , Atsuo Omaru , Masayuki Nagamine
发明人： Koji Moriguchi , Mitsuhara Yonemura , Kazuhito Kamei , Masaru Abe , Hideya Kaminaka , Noriyuki Negi , Atsuo Omaru , Masayuki Nagamine
IPC分类号： C01B3104
CPC分类号： H01M10/0525 , C01B32/20 , C01P2002/60 , C01P2002/72 , C01P2006/80 , H01M4/133 , H01M4/587 , H01M2004/021 , Y10T428/30
摘要： A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/&mgr;m and not more than 1500/&mgr;m, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C. for graphization and subsequently further heat-treating the graphized material at a temperature exceeding a temperature of the oxidating heat treatment and the heat treatment in the inert gas.
摘要翻译：以更低的成本制造适合于确保高放电容量不低于320mAh / g的锂离子二次电池的负极材料的石墨粉末。具体地说，在粉末表面上，在石墨c平面层的端部含有0.01〜5.0重量％的硼并且具有环状封闭结构的石墨粉末，相邻闭合结构之间的间隙平面部分的密度不是小于100 /小时且不超过1500 / mum，d002优选不大于3.3650，通过以下方法制造：（1）在碳化之前或之后以高速粉碎的碳材料进行热处理，以在超过或者（2）在碳化之前或之后粉碎的碳材料在超过1500℃的温度下进行热处理，以进行石墨化，随后在超过氧化热处理温度的温度下进一步热处理石墨化材料并在惰性气体中进行热处理。

6. 发明授权

US06576369B1 Graphite powder suitable for negative electrode material of lithium ion secondary batteries 有权
标题翻译：石墨粉适用于锂离子二次电池的负极材料
公开(公告)号：US06576369B1
公开(公告)日：2003-06-10
申请号：US09138561
申请日：1998-08-24
申请人： Koji Moriguchi , Mitsuharu Yonemura , Kazuhito Kamei , Noriyuki Negi , Masaru Abe , Hideya Kaminaka
发明人： Koji Moriguchi , Mitsuharu Yonemura , Kazuhito Kamei , Noriyuki Negi , Masaru Abe , Hideya Kaminaka
IPC分类号： C01B3104
CPC分类号： H01M4/583 , C01B32/20 , C01P2002/60 , C01P2006/12 , C01P2006/40 , H01M4/133 , H01M4/622 , H01M4/623 , H01M6/10 , H01M10/0525
摘要： A graphite powder has surface closed-end structures in which the graphite c-plane layers of the graphite layer crystal lattices have closed-ends on the surface of the graphite powder by linking the ends of one or more pairs of the c-plane layers, leaving interstices which are open on the surface of the graphite. The number of open interstices is at least 100 and at most 1500 per micrometer in a c-axis direction of the graphite. Preferably, the graphite powder has a specific surface area of 1.0 m2/g or less. Such a graphite powder can be prepared either by graphitizing a carbon material, which has been pulverized at a high speed under well-controlled conditions before and/or after the carbonization, or by subjecting a carbon material, which has been pulverized under well-controlled conditions before and/or after the carbonization, to graphitization and then to oxidative heat treatment at a temperature of 600-800° C. and finally to heat treatment at a temperature of 800° C. or higher in an inert gas. The graphite powder can be used to produce negative electrodes of lithium ion secondary batteries having a high discharge capacity of at least 320 mAh/g and a high charge/discharge coulombic efficiency of at least 90%.
摘要翻译：石墨粉末具有表面封闭端结构，其中石墨层晶格的石墨c面层通过连接一对或多对c面层的端部而在石墨粉末的表面上具有封闭端，留下在石墨表面开放的间隙。在石墨的c轴方向上，开口间隙的数量为至少100个，最高为1500微米。优选石墨粉的比表面积为1.0m 2 / g以下。这样的石墨粉末可以通过在碳化之前和/或之后在良好控制的条件下高速粉碎的碳材料进行石墨化，或者通过将被粉碎的碳材料进行良好控制在碳化之前和/或之后的条件进行石墨化，然后在600-800℃的温度下进行氧化热处理，最后在惰性气体中在800℃以上的温度下进行热处理。该石墨粉末可用于制造具有至少320mAh / g的高放电容量和高充放电库仑效率至少为90％的锂离子二次电池的负极。

7. 发明授权

US09131292B2 Wireless microphone system 有权
标题翻译：无线麦克风系统
公开(公告)号：US09131292B2
公开(公告)日：2015-09-08
申请号：US13992653
申请日：2011-12-09
申请人： Ken'ichi Ejima , Takashi Ogura , Koji Moriguchi
发明人： Ken'ichi Ejima , Takashi Ogura , Koji Moriguchi
IPC分类号： H04R3/00 , H04L9/00 , H04R1/08
CPC分类号： H04R3/00 , H04L9/00 , H04L63/0428 , H04R1/08 , H04R2420/07 , H04W12/02
摘要： Provided is a wireless microphone system comprising a microphone and a wireless receiver, wherein the wireless microphone system is provided with: a normal communication mode in which communication is performed by using a normal unique word (UWN) preset in both the microphone and the wireless receiver devices; a confidential setting mode in which a confidential unique word (UWX) is transmitted without being set in either of said devices; and a confidential communication mode in which communication is performed by both said devices by using the confidential unique word (UWX) set by the confidential setting mode.
摘要翻译：提供了一种包括麦克风和无线接收器的无线麦克风系统，其中无线麦克风系统被提供有：正常通信模式，其中通过使用在麦克风和无线接收机中预设的普通唯一字（UWN）来执行通信设备; 保密设置模式，其中在不在所述设备中的任一个中发送机密唯一字（UWX）; 以及通过使用通过机密设置模式设置的机密唯一字（UWX）由两个所述设备进行通信的机密通信模式。

8. 发明申请

US20090202087A1 Wireless Microphone Device 有权
标题翻译：无线麦克风设备
公开(公告)号：US20090202087A1
公开(公告)日：2009-08-13
申请号：US12310969
申请日：2007-09-10
申请人： Mitsuru Nakashima , Koji Moriguchi
发明人： Mitsuru Nakashima , Koji Moriguchi
IPC分类号： H03F99/00 , H04R3/00
CPC分类号： H01Q1/50 , H01Q9/16
摘要： To provide a wireless microphone device that enables a circuit board, which is to be provided with an oscillation circuit, to be decreased in size without deteriorating radiation characteristics.The wireless microphone device is configured to include: a circuit board 5 that is sectioned into circuit areas 11a and 11b and makes the respective circuit areas function as antenna elements of a dipole antenna; an oscillation circuit 21 that is arranged in the circuit area 11b and generates a high frequency signal on the basis of a voice signal from a microphone 2a; a feeding path for feeding the high frequency signal to an electrically conductive layer 11 in the circuit area 11b through a feeding point positioned on the circuit area 11a side distant from the oscillation circuit 21; and a high frequency shield covering at least a part of the feeding path. The high frequency shield is formed by covering the feeding path with a metal case 12 having an opening at a bottom face and conducting the metal case 12 to the electrically conducting layer 11 in the circuit area 11b.
摘要翻译：为了提供使能够提供振荡电路的电路板的无线麦克风装置的尺寸减小而不降低辐射特性。无线麦克风装置被配置为包括：电路板5，其被分成电路区域11a和11b，并使各个电路区域用作偶极天线的天线元件; 布置在电路区域11b中并基于来自麦克风2a的语音信号产生高频信号的振荡电路21; 用于通过位于远离振荡电路21的电路区域11a侧的馈电点将高频信号馈送到电路区域11b中的导电层11的馈电路径; 以及覆盖所述馈送路径的至少一部分的高频屏蔽。通过用在底面具有开口的金属壳体12覆盖馈送路径并将金属壳体12导引到电路区域11b中的导电层11而形成高频屏蔽。

9. 发明授权

US07214447B2 Graphite powders suited for negative electrode material of lithium ion secondary battery 失效
标题翻译：适用于锂离子二次电池负极材料的石墨粉
公开(公告)号：US07214447B2
公开(公告)日：2007-05-08
申请号：US10826233
申请日：2004-04-16
申请人： Koji Moriguchi , Mitsuhara Yonemura , Kazuhito Kamei , Masaru Abe , Hideya Kaminaka , Noriyuki Negi , Atsuo Omaru , Masayuki Nagamine
发明人： Koji Moriguchi , Mitsuhara Yonemura , Kazuhito Kamei , Masaru Abe , Hideya Kaminaka , Noriyuki Negi , Atsuo Omaru , Masayuki Nagamine
IPC分类号： H01M4/58 , C01B31/04
CPC分类号： H01M10/0525 , C01B32/20 , C01P2002/60 , C01P2002/72 , C01P2006/80 , H01M4/133 , H01M4/587 , H01M2004/021 , Y10T428/30
摘要： A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/μm and not more than 1500/μm, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C. forgraphization and subsequently further heat-treating the graphized material at a temperature exceeding a temperature of the oxidating heat treatment and the heat treatment in the inert gas.
摘要翻译：要以更低的成本制造适合于确保高放电容量不低于320mAh / g的锂离子二次电池的负极材料的石墨粉末。具体地说，在粉末表面上，在石墨c平面层的端部含有0.01〜5.0重量％的硼并且具有环状封闭结构的石墨粉末，相邻闭合结构之间的间隙平面部分的密度不是通过（1）在碳化之前或之后以高速粉碎的碳材料进行热处理，以在温度下进行石墨化，制造小于100 / mum且不大于1500 / mum，d 002优选不大于3.3650 超过1500℃或通过（2）在碳化之前或之后粉碎的碳材料在超过1500℃的温度下进行热处理，进行热成像，然后在超过氧化热处理温度的温度下进一步热处理石墨化材料并在惰性气体中进行热处理。

10. 发明授权

US06784537B2 Semiconductor device of surface-mounting type 有权
标题翻译：表面安装型半导体器件
公开(公告)号：US06784537B2
公开(公告)日：2004-08-31
申请号：US10237689
申请日：2002-09-10
申请人： Koji Moriguchi
发明人： Koji Moriguchi
IPC分类号： H01L2334
CPC分类号： H01L24/02 , H01L23/3107 , H01L23/4951 , H01L23/49562 , H01L24/12 , H01L24/81 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2224/32245 , H01L2224/73153 , H01L2224/73253 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device of a surface-mounting type has a mount surface and includes a semiconductor chip having a first surface, a second surface, a heat-generating portion located nearer to the second surface than the first surface and that generates heat during operation, and at least one patterned electrode formed on the second surface. A resin covers the semiconductor chip and an electrode terminal is extracted from the first surface of the semiconductor chip. A mounting face of the electrode terminal and a surface of the at least one patterned electrode are exposed to be substantially flush with a plane of the mount surface, and a perimeter of the at least one patterned electrode is surrounded by the resin.
摘要翻译：表面安装型半导体器件具有安装表面，并且包括半导体芯片，其具有第一表面，第二表面，位于比第一表面更靠近第二表面并在操作期间产生热量的发热部分;以及形成在第二表面上的至少一个图案化电极。树脂覆盖半导体芯片，并且从半导体芯片的第一表面提取电极端子。电极端子的安装面和至少一个图案化电极的表面被暴露为与安装表面的平面基本齐平，并且至少一个图案化电极的周边被树脂包围。

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