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    • 5. 发明申请
      US20110076821A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    • 半导体器件及其制造方法
    • US20110076821A1
    • 2011-03-31
    • US12963270
    • 2010-12-08
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L21/336
    • H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
    • A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.
    • 一种制造半导体器件的方法，包括在第一导电类型的半导体衬底上形成栅极绝缘膜和栅电极; 通过以第一预定剂量注入第二导电类型的第一杂质，形成第一漏区，所述第二杂质与所述半导体衬底的所述栅极端部附近的区域相对于所述第一导电类型对应于相反导电类型 电极; 通过以大于所述第一剂量的第二剂量注入所述第二导电类型的第二杂质，形成基本上在所述第一漏区范围内的第二漏区; 以及通过以大于所述第二剂量的第三剂量注入所述第二导电类型的第三杂质，在所述第二漏区内形成漏极接触区域。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US08298898B2 Manufacturing method of semiconductor device with increased drain breakdown voltage 有权
    • Manufacturing method of semiconductor device with increased drain breakdown voltage
    • 具有增加的漏极击穿电压的半导体器件的制造方法
    • US08298898B2
    • 2012-10-30
    • US12963270
    • 2010-12-08
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L21/336
    • H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
    • A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.
    • 一种制造半导体器件的方法，包括在第一导电类型的半导体衬底上形成栅极绝缘膜和栅电极; 通过以第一预定剂量注入第二导电类型的第一杂质，形成第一漏区，所述第二杂质与所述半导体衬底的所述栅极端部附近的区域相对于所述第一导电类型对应于相反导电类型 电极; 通过以大于所述第一剂量的第二剂量注入所述第二导电类型的第二杂质，形成基本上在所述第一漏区范围内的第二漏区; 以及通过以大于所述第二剂量的第三剂量注入所述第二导电类型的第三杂质，在所述第二漏区内形成漏极接触区域。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 7. 发明授权
      US07868385B2 Semiconductor device with increased drain breakdown voltage 有权
    • Semiconductor device with increased drain breakdown voltage
    • 半导体器件具有增加的漏极击穿电压
    • US07868385B2
    • 2011-01-11
    • US11072268
    • 2005-03-07
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
    • H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
    • A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
    • 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括：第一漏极区，其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域，形成在第一漏极区域内;以及 与漏极接触，以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度，并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 8. 发明申请
      US20060081924A1 Semiconductor device and manufacturing method of the same 有权
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法相同
    • US20060081924A1
    • 2006-04-20
    • US11072268
    • 2005-03-07
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L29/76
    • H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
    • A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
    • 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括：第一漏极区，其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域，形成在第一漏极区域内;以及 与漏极接触，以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度，并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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