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    • 1. 发明专利
    • Method for freezing vegetable, and vegetable frozen by the method
    • 通过该方法冷冻蔬菜和蔬菜冷冻的方法
    • JP2009278931A
    • 2009-12-03
    • JP2008135306
    • 2008-05-23
    • Hiromichi Ichikawa市川 弘道
    • ICHIKAWA HIROMICHI
    • A23B7/04
    • PROBLEM TO BE SOLVED: To provide a method for freezing vegetable by which vegetable, particularly chopped vegetable or leaf vegetable which is chopped so as to be suitable for being immediately cooked or eaten raw, can be frozen without spoiling crunchiness thereof: and vegetable, particularly chopped vegetable or leaf vegetable which is chopped so as to be suitable for being immediately cooked or eaten raw. SOLUTION: The method for freezing vegetable includes: soaking vegetable, particularly chopped vegetable or leaf vegetable which is chopped so as to be suitable for being immediately cooked or eaten raw, in a polysaccharide aqueous solution, particularly a trehalose aqueous solution; draining water from the vegetable; putting the drained vegetable in a bag; removing the air out of the bag to be hermetically sealed; and putting the sealed bag with the vegetable in a freezer to be frozen. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种冷冻蔬菜的方法,其中切碎的蔬菜,特别是切碎的蔬菜或叶蔬菜适于立即煮熟或食用,可以冷冻而不破坏其脆性; 蔬菜,特别是切碎的蔬菜或叶蔬菜,其切碎以适于立即煮熟或食用。 解决方案:冷冻蔬菜的方法包括:在多糖水溶液,特别是海藻糖水溶液中浸泡切碎的蔬菜,特别是切碎的蔬菜或叶蔬菜以便立即煮熟或食用, 从蔬菜中排出水; 把排出的蔬菜放在一个袋子里; 从袋中取出空气以进行气密密封; 将带有蔬菜的密封袋放入冷冻箱中冻结。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Purchase/reservation of security, insurance, currency exchange and the like by using mobile apparatus in television/radio broadcasting using digital radio wave
    • 购买/保留安全,保险,货币兑换以及使用数字无线电波在电视/无线电广播中使用移动设备的方式
    • JP2007172434A
    • 2007-07-05
    • JP2005371347
    • 2005-12-26
    • Hiromichi Ichikawa市川 弘道
    • ICHIKAWA HIROMICHI
    • G06Q10/00G06Q20/32G06Q30/02G06Q30/06G06Q40/00G06Q40/04G06Q50/00
    • PROBLEM TO BE SOLVED: To solve the problem that since the capacity of information distribution by analog radio waves is small, and the transmission/reception of much more information is impossible at once, it is impossible to purchase a security while viewing a moving image requiring much information quantity, and it is impossible to transmit information interesting each of sub-divided(segmented) customers. SOLUTION: Radio waves are digitized, so that the capacity of information distribution can be increased at once, and the Internet is used, so that the information to be transmitted/received can be sharply increased, and mobile equipment door receiving the radio/television broadcasting of a digital radio wave by using the Internet is carried, so that it is possible to purchase/reserve a security, insurance, currency exchange and the like anytime and anywhere. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题为了解决由于模拟无线电波的信息分配容量小而且不可能立即发送/接收更多信息的问题,在查看 需要大量信息量的移动图像,并且不可能传送每个分割(分段)的客户感兴趣的信息。 解决方案:无线电波被数字化,从而可以一次性增加信息分发的容量,并使用因特网,从而可以大大增加要发送/接收的信息,移动设备的门接收无线电 通过使用互联网进行数字无线电波的电视广播,从而可以随时随地购买/保留安全,保险,货币兑换等。 版权所有(C)2007,JPO&INPIT
    • 6. 发明授权
    • Semiconductor device with increased drain breakdown voltage
    • 半导体器件具有增加的漏极击穿电压
    • US07868385B2
    • 2011-01-11
    • US11072268
    • 2005-03-07
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L29/76H01L29/94H01L31/062H01L31/113H01L31/119
    • H01L29/0847H01L21/823814H01L27/0623H01L27/0922H01L29/0696H01L29/42368H01L29/66659H01L29/7835
    • A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
    • 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括:第一漏极区,其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域,形成在第一漏极区域内;以及 与漏极接触,以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度,并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。
    • 7. 发明申请
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法相同
    • US20060081924A1
    • 2006-04-20
    • US11072268
    • 2005-03-07
    • Hiromichi Ichikawa
    • Hiromichi Ichikawa
    • H01L29/76
    • H01L29/0847H01L21/823814H01L27/0623H01L27/0922H01L29/0696H01L29/42368H01L29/66659H01L29/7835
    • A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
    • 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括:第一漏极区,其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域,形成在第一漏极区域内;以及 与漏极接触,以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度,并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。