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    • 1. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US06556071B2
    • 2003-04-29
    • US10098432
    • 2002-03-18
    • Hiromi NotaniHiroshi Makino
    • Hiromi NotaniHiroshi Makino
    • G05F110
    • H02M3/07H02M2001/0032Y02B70/16
    • On a sleep state, a voltage dropping circuit 2 supplies a power supply line VA1 with a voltage obtained by dropping a voltage of a power supply line VA2, instead of a voltage in accordance with ON state of a switch QA1. A power supply line GND has a voltage equal to the ground voltage. A charge pump circuit 10 outputs the ground voltage on an active state. The charge pump circuit 10 outputs a voltage which is lower than the ground voltage, on the sleep state. A source electrode and a substrate electrode are connected to the power supply lines VA1 and VA2 in each of PMOS transistors Q3 and Q4 of an internal circuit 1 (latch circuit), respectively. A source electrode is connected to the power supply line GND in each of nMOS transistors Q5 and Q6 of the internal circuit 1. A substrate electrode is supplied with the voltage which is outputted from the charge pump circuit, in each of the nMOS transistors Q5 and Q6 of the internal circuit 1. As a result, it is possible to reduce a leakage current withholding data in the internal circuit on the sleep state, even if the supply voltage drops on the sleep state.
    • 在睡眠状态下,电压下降电路2向电源线VA1提供通过降低电源线VA2的电压而获得的电压,而不是根据开关QA1的导通状态的电压。 电源线GND具有等于接地电压的电压。 电荷泵电路10在接通状态下输出接地电压。 电荷泵电路10在睡眠状态下输出低于接地电压的电压。 源电极和基板电极分别连接到内部电路1(锁存电路)的PMOS晶体管Q3和Q4中的电源线VA1和VA2。 源电极连接到内部电路1的nMOS晶体管Q5和Q6中的每一个中的电源线GND。在每个nMOS晶体管Q5中向基板电极提供从电荷泵电路输出的电压, Q6。因此,即使电源电压下降到休眠状态,也可以在睡眠状态下减少内部电路中的泄漏电流保留数据。
    • 5. 发明申请
    • Charged Particle Ray Apparatus and Pattern Measurement Method
    • 带电粒子装置和图案测量方法
    • US20140001360A1
    • 2014-01-02
    • US14002275
    • 2012-01-27
    • Yuji KasaiMakoto SuzukiHiroshi Makino
    • Yuji KasaiMakoto SuzukiHiroshi Makino
    • H01J37/05
    • H01J37/05G01N23/2251G06T1/00H01J37/244H01J37/28H01J2237/24475H01J2237/24485H01J2237/2449H01J2237/24495
    • Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities.
    • 提供了一种使具有不同能量的信号带电粒子的合成功能自动化的技术。 带电粒子束装置包括:带电粒子源,被配置为用一次带电粒子射线照射样品; 第一检测器,被配置为检测从所述样品产生的信号带电粒子的具有第一能量的第一信号电子; 第二检测器,被配置为检测从样品产生的信号带电粒子的具有第二能量的第二信号电子; 第一操作部,被配置为改变第一信号电子的信号强度和第二信号电子的信号强度的合成比,并且生成与每个合成比相对应的检测图像; 第二操作部,被配置为计算与针对每个合成比生成的检测图像的预定的两个区域相对应的信号强度的比率; 以及第三操作部件,被配置为基于信号强度比的变化来确定用于获取检测到的图像的混合比率。
    • 10. 发明申请
    • CHARGED PARTICLE BEAM APPARATUS
    • 充电颗粒光束装置
    • US20110204228A1
    • 2011-08-25
    • US13126198
    • 2009-10-28
    • Natsuki TsunoHiroshi Makino
    • Natsuki TsunoHiroshi Makino
    • H01J37/28
    • H01J37/28H01J37/224H01J2237/24507H01J2237/24592H01J2237/2482H01J2237/2814H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
    • 通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型,在带电粒子束装置中检查电路图案的特定层是困难的, 在半导体制造过程中。 在通过使用从带电粒子源(11)发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候,布置在保持器(20)上的晶片, 用光照射系统(9)照射彼此不同的波长的光,同时用带电粒子束照射晶片。 因此,改善了图像的对比度并且以高灵敏度进行检查。