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1. 发明申请

US20090161408A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20090161408A1
公开(公告)日：2009-06-25
申请号：US12440207
申请日：2007-11-29
申请人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
发明人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
IPC分类号： G11C11/00 , G11C11/416
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0088 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.
摘要翻译：半导体存储器件包括：存储单元阵列，其包括以矩阵形式排列的每个具有选择晶体管的存储单元和通过施加第一写入电压而从第一状态改变到第二状态的电阻的可变电阻元件，并且从第二状态到第一状态通过施加第二写入电压。用于将电阻从第一状态改变到第二状态的第一写入操作的第一写入电流大于用于将第二写入操作从第二状态改变到第一状态的第二写入电流。一次受到第二次写入操作的存储器单元的第二存储单元数量大于经历第一次写入操作的存储单元的第一存储单元数。至少第二存储单元号是多个。

2. 发明授权

US08059448B2 Semiconductor memory device with variable resistance elements 有权
标题翻译：半导体存储器件具有可变电阻元件
公开(公告)号：US08059448B2
公开(公告)日：2011-11-15
申请号：US12440207
申请日：2007-11-29
申请人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
发明人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0088 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.
摘要翻译：半导体存储器件包括：存储单元阵列，其包括以矩阵形式排列的每个具有选择晶体管的存储单元和通过施加第一写入电压而从第一状态改变到第二状态的电阻的可变电阻元件，并且从第二状态到第一状态通过施加第二写入电压。用于将电阻从第一状态改变到第二状态的第一写入操作的第一写入电流大于用于将第二写入操作从第二状态改变到第一状态的第二写入电流。一次受到第二次写入操作的存储器单元的第二存储单元数量大于经历第一次写入操作的存储单元的第一存储单元数。至少第二存储单元号是多个。

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