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1. 发明授权

US06326993B1 Pulse width modulation system and image forming apparatus having the pulse width modulation system 失效
标题翻译：脉宽调制系统和具有脉宽调制系统的图像形成装置
公开(公告)号：US06326993B1
公开(公告)日：2001-12-04
申请号：US09526289
申请日：2000-03-15
申请人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
发明人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
IPC分类号： B41J247
CPC分类号： G06K15/00 , G06K2215/0002 , G06K2215/0011 , G06K2215/0082
摘要： When a CPU begins to monitor whether delay variation characteristics of a pulse width variation circuit have varied, it selects a basic delay setting value in a basic delay value setting block from a smallest one. The CPU sets a division number in a phase select block from a given minimum desired division number for pulse width modulation. The CPU senses the level of a phase comparison result signal (PHASE) from the pulse width modulation circuit. If the phase comparison result signal is stable at “1”, the CPU 1 fixes the division number. If the phase comparison result signal is “0” and the division number is not maximum, the CPU increases the division number and goes back to the setting of the division number. If the division number is maximum, the CPU increases the basic delay and goes back to the basic delay setting.
摘要翻译：当CPU开始监视脉宽变化电路的延迟变化特性是否变化时，从最小的基本延迟值设定块中选择基本的延迟设定值。 CPU根据脉冲宽度调制的给定最小期望分频数设置相位选择块中的分频数。 CPU检测来自脉宽调制电路的相位比较结果信号（PHASE）的电平。如果相位比较结果信号稳定在“1”，则CPU 1固定分割号。如果相位比较结果信号为“0”且分频数不是最大值，则CPU增加分频数，并返回到分频数的设置。如果分频数是最大值，则CPU会增加基本延时并返回到基本延时设置。

2. 发明授权

US06476847B2 Pulse width modulation system and image forming apparatus having the pulse width modulation system 失效
公开(公告)号：US06476847B2
公开(公告)日：2002-11-05
申请号：US09986942
申请日：2001-11-13
申请人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
发明人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
IPC分类号： B41J247
CPC分类号： G06K15/00 , G06K2215/0002 , G06K2215/0011 , G06K2215/0082
摘要： When a CPU begins to monitor whether delay variation characteristics of a pulse width variation circuit have varied, it selects a basic delay setting value in a basic delay value setting block from a smallest one. The CPU sets a division number in a phase select block from a given minimum desired division number for pulse width modulation. The CPU senses the level of a phase comparison result signal (PHASE) from the pulse width modulation circuit. If the phase comparison result signal is stable at “1”, the CPU 1 fixes the division number. If the phase comparison result signal is “0” and the division number is not maximum, the CPU increases the division number and goes back to the setting of the division number. If the division number is maximum, the CPU increases the basic delay and goes back to the basic delay setting.

3. 发明授权

US09196484B2 Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol 有权
标题翻译：用于形成抗蚀剂下层膜的含硅组合物，其含有含有保护的脂族醇的有机基团
公开(公告)号：US09196484B2
公开(公告)日：2015-11-24
申请号：US13825158
申请日：2011-09-14
申请人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
发明人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
IPC分类号： H01L21/311 , H01L21/033 , G03F7/075 , G03F7/09 , C09D183/04 , C08G77/14 , C08G77/16
CPC分类号： H01L21/0332 , C08G77/14 , C08G77/16 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.
摘要翻译：本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

4. 发明授权

US08903032B2 Structure for suppressing flow vibration of instrumentation guide tube 有权
标题翻译：用于抑制仪表导管流动振动的结构
公开(公告)号：US08903032B2
公开(公告)日：2014-12-02
申请号：US12527484
申请日：2008-02-22
申请人： Nobuki Uda , Shigeyuki Watanabe , Kazuo Hirota , Hideyuki Sakata , Hideyuki Morita , Makoto Nakajima , Chikara Kurimura , Toshio Ichikawa
发明人： Nobuki Uda , Shigeyuki Watanabe , Kazuo Hirota , Hideyuki Sakata , Hideyuki Morita , Makoto Nakajima , Chikara Kurimura , Toshio Ichikawa
IPC分类号： G21C7/06 , G21C17/10 , G21C17/08 , G21C3/322
CPC分类号： G21C17/10 , G21C3/322 , G21C17/08 , G21Y2002/207 , G21Y2002/303 , G21Y2004/30
摘要： An upper hole 37A and a lower hole 37B are provided at two positions, namely, upper and lower portions, of a side surface of a guide tube 27, and a thimble tube 22 is pressed against an inner circumferential surface of the guide tube 27, by a differential pressure between coolant inside and outside the upper hole 37A and the lower hole 37B. It is preferable that an upper pressure adjustment hole and a lower pressure adjustment hole are provided at two positions, namely, upper and lower portions, of a side surface of an upper core support column 21, and a coolant flowing into the guide tube from an upper end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the upper hole, and also flows out to the outside from inside the upper core support column through the upper pressure adjustment hole, and a coolant flowing into the guide tube from a lower end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the lower hole, and also flows out to the outside from inside the upper core support column through the lower pressure adjustment hole.
摘要翻译：在引导管27的侧面的两个位置，即上下部分设置有上孔37A和下孔37B，并且将套管22压靠在引导管27的内周面上，通过上部孔37A和下部孔37B的内部和外部的冷却剂之间的压力差。优选的是，上压力调节孔和下压力调节孔设置在上芯支撑柱21的侧表面的两个位置，即上部和下部，以及从上部芯支撑柱21的侧表面流入导管的冷却剂引导管的上端通过引导管和上孔之间的间隙从导管的内部流出到外部，并且还通过上压力调节孔从上芯支撑柱的内部流出到外部，并且从引导管的下端流入引导管的冷却剂通过引导管和下孔之间的间隙从引导管的内部流出到外部，并且还从上部芯支撑体内部流出到外部柱通过下压力调节孔。

5. 发明申请

US20140079855A1 METHOD FOR PRODUCING COFFEE EXTRACT 审中-公开
标题翻译：生产咖啡提取物的方法
公开(公告)号：US20140079855A1
公开(公告)日：2014-03-20
申请号：US13979884
申请日：2011-08-01
申请人： Yoshiaki Yokoo , Yoshihiro Nakao , Hiroki Furuta , Makoto Nakajima , Hiroaki Shimizu , Morio Mitsuhashi , Kitaro Oka , Chiseko Sakuma
发明人： Yoshiaki Yokoo , Yoshihiro Nakao , Hiroki Furuta , Makoto Nakajima , Hiroaki Shimizu , Morio Mitsuhashi , Kitaro Oka , Chiseko Sakuma
IPC分类号： A23F5/26
CPC分类号： A47J31/44 , A23F5/262 , A47J31/407 , B65D85/8043
摘要： A method for manufacturing a coffee extract is provided which method enables flavor ingredients of coffee to be extracted separately from bitter ingredients. A coffee extract is obtained by a method including a) a step of placing coffee granules in a granule container part substantially sealed by a restraining member, b) a step of guiding an extraction solvent from a first direction into the granule container part for extraction, and c) a step of retrieving, from the first direction, a coffee extract stored in the granule container part.
摘要翻译：提供一种制造咖啡提取物的方法，该方法使得咖啡的风味成分能够与苦味成分分开提取。通过以下方法获得咖啡提取物：a）将咖啡颗粒放置在基本上被约束构件密封的颗粒容器部分中的步骤，b）将提取溶剂从第一方向引导到用于萃取的颗粒容器部分中的步骤，以及c）从所述第一方向取回存储在所述颗粒容器部分中的咖啡提取物的步骤。

6. 发明授权

US08283103B2 Composition for forming resist underlayer film for lithography and production method of semiconductor device 失效
标题翻译：用于形成用于光刻的抗蚀剂下层膜的组合物和半导体器件的制造方法
公开(公告)号：US08283103B2
公开(公告)日：2012-10-09
申请号：US12673926
申请日：2008-08-26
申请人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
发明人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08G77/60 , C09D183/16 , G03F7/0752
摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
摘要翻译：提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

7. 发明申请

US20120070994A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND 有权
标题翻译：含有硫化物粘合剂的耐下层膜形成组合物
公开(公告)号：US20120070994A1
公开(公告)日：2012-03-22
申请号：US13375517
申请日：2010-05-28
申请人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
发明人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
IPC分类号： H01L21/312 , C07F7/18 , B32B9/00 , C08K5/548
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/091 , Y10T428/31663
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.
摘要翻译：提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的化合物，硫原子与硅原子的比例小于5摩尔％。可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

8. 发明授权

US08066422B2 Material moisture content adjustment method 有权
标题翻译：材料含水量调节方法
公开(公告)号：US08066422B2
公开(公告)日：2011-11-29
申请号：US11909499
申请日：2006-03-27
申请人： Ichizou Kobayashi , Takeshi Sasakura , Toshiyuki Tanaka , Katsuhiro Uemoto , Makoto Nakajima
发明人： Ichizou Kobayashi , Takeshi Sasakura , Toshiyuki Tanaka , Katsuhiro Uemoto , Makoto Nakajima
IPC分类号： B01F15/06 , B01F15/02 , B01F3/18 , B01F3/12 , B01F3/20 , B01F3/22 , B28C3/00 , C09K17/02 , G21F9/36
CPC分类号： B28C7/0038 , B01F3/1221 , B01F3/186 , B01F3/20 , B01F3/2014 , B01F3/2064 , B01F3/2078 , B01F3/22 , B01F5/0475 , B01F5/0478 , B28C3/00 , B28C5/468 , B28C7/024 , B28C7/026 , C04B33/04 , C04B35/6263 , G21F9/162 , G21F9/34
摘要： When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank (1) configured with a normal powder mixer kept at low temperatures, pulverulent bentonite (A) and fine granular ice (B) are stirred and mixed. Stirring and mixing of the fellow pulverulent materials are adapted to uniformly mix the pulverulent bentonite (A) and the fine granular ice (B), enabling uniformly moisture content-adjusted bentonite to be obtained. A liquid-nitrogen gas bomb (21), for instance, is connected to the mixing tank (1), causing the inside of the mixing tank to be kept at low temperatures with nitrogen gas supplied from the bomb, before putting the prepared fine granular ice (B) through an inlet port (20).
摘要翻译：当通过向诸如膨润土的粉末材料等原料添加水等水分进行水分含量调节时，以比较简单的设备使水等液体与原料均匀混合，大量原料可以获得材料，此外，通过均匀的含水量调节可获得具有令人满意的性能如不渗透性的材料。在配置有保持在低温下的普通粉末混合器的混合罐（1）中，搅拌混合粉状膨润土（A）和细粒状冰（B）。搅拌和混合粉末状材料适于均匀混合粉状膨润土（A）和细粒状冰（B），从而可获得均匀的含水量调节膨润土。例如，将液氮气体炸弹（21）连接到混合罐（1），在将制备好的细颗粒冰（B）通过入口（20）。

9. 发明申请

US20110045404A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：用于形成电阻膜的薄膜的组合物和半导体器件的制造方法
公开(公告)号：US20110045404A1
公开(公告)日：2011-02-24
申请号：US12673926
申请日：2008-08-26
申请人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
发明人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/11 , C08G77/60 , C09D183/16 , G03F7/0752
摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
摘要翻译：提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

10. 发明申请

US20080318158A1 Underlayer Coating Forming Composition for Lithography Containing Polysilane Compound 有权
标题翻译：含有聚硅烷化合物的平版印刷用底层涂料组合物
公开(公告)号：US20080318158A1
公开(公告)日：2008-12-25
申请号：US11920840
申请日：2006-05-12
申请人： Satoshi Takei , Keisuke Hashimoto , Makoto Nakajima
发明人： Satoshi Takei , Keisuke Hashimoto , Makoto Nakajima
IPC分类号： G03C1/73 , G03F7/20
CPC分类号： G03F7/0752 , C09D183/16 , G03F7/11 , Y10S430/128
摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.
摘要翻译：提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。

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