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    • 2. 发明授权
    • Ferroelectric memory device
    • 铁电存储器件
    • US5671174A
    • 1997-09-23
    • US575078
    • 1995-12-19
    • Hiroki KoikeTohru Kimura
    • Hiroki KoikeTohru Kimura
    • G11C11/22G11C14/00H01L21/8246H01L27/105
    • G11C11/22
    • The ferroelectric memory device includes (A) at least one memory cell array, the memory cell array including (a) a plurality of memory cells arranged in row and column directions, each of the memory cells having a capacitive element and a transistor, the capacitive element having a ferroelectric film interposed between electrodes facing to each other, storing and retaining binary data in accordance with polarization of the ferroelectric film, one of a source and a drain of the transistor being electrically connected to one of the electrodes of the capacitive element, and (b) a plate line being electrically connected to the other of the electrodes of the capacitive element; and (B) an arrangement for arranging a voltage of the plate line to be fixed and activating the transistor so as to arrange a voltage at a junction of the transistor and the capacitive element to be the same as the voltage of the plate line. The ferroelectric memory device in accordance with the invention accomplishes higher speed operation and lower consumption of electric power, prevents destruction of stored data, and simplifies voltage control and operation control of word lines.
    • 铁电存储器件包括(A)至少一个存储单元阵列,存储单元阵列包括(a)以行和列方向布置的多个存储单元,每个存储单元具有电容元件和晶体管,电容 元件,其具有介于彼此面对的电极之间的铁电体膜,根据铁电体膜的极化存储和保留二进制数据,晶体管的源极和漏极之一电连接到电容元件的一个电极, 和(b)电连接到电容元件的另一个电极的板线; 和(B)用于布置待固定的板线的电压并激活晶体管以将晶体管和电容元件的结的电压设置为与板线的电压相同的布置。 根据本发明的铁电存储器件实现了更高的速度操作和更低的功率消耗,防止存储数据的破坏,并且简化了字线的电压控制和操作控制。
    • 3. 发明授权
    • Non-volatile ferroelectric memory device with leakage preventing function
    • 具有防漏功能的非易失性铁电存储器件
    • US5615144A
    • 1997-03-25
    • US511527
    • 1995-08-04
    • Tohru KimuraHiroki Koike
    • Tohru KimuraHiroki Koike
    • G11C14/00G11C11/22G11C11/408G11C17/00H01L21/8246H01L27/10H01L27/105
    • G11C11/22
    • A non-volatile ferroelectric memory device includes a plurality of memory cells provided in a matrix manner, each of which comprises a transistor having a gate and source and drain regions formed in a semiconductor region, and a ferroelectric capacitor having first and second electrodes and a ferroelectric layer interposed between the first and second electrodes. The second electrode is connected to one of the source and drain regions of the transistor. The memory device further includes a plurality of pairs of bit lines, each of the bit lines of each of the pairs being connected to the other of the source and drain regions of the transistor of each memory cell in a column of the plurality of memory cells, a plurality of word lines each of which is connected to the gate of the transistor of each memory cell in a row of the plurality of memory cells, a plate potential section for generating a first predetermined potential intermediate between a reference potential and a high DC voltage and supplying the first potential to the first electrode of each of the plurality of memory cells, a well potential section for generating a second predetermined potential lower than the first potential with respect to the reference potential and supplying the second potential to the semiconductor region of each of the plurality of transistors, and a sense amplifier section for sensing a data using potentials on the bit lines of each of the plurality of pairs of bit lines. The well potential section functions as a preventing section for preventing a leakage current from flowing from the ferroelectric layer.
    • 非挥发性铁电存储器件包括以矩阵方式设置的多个存储单元,每个存储单元包括具有形成在半导体区域中的栅极和源极和漏极区域的晶体管,以及具有第一和第二电极的铁电电容器和 介于第一和第二电极之间的铁电层。 第二电极连接到晶体管的源极和漏极区之一。 存储器件还包括多对位线,每对存储器单元的列中的每一对的每个位线连接到每个存储器单元的晶体管的源极和漏极区域中的另一个, 多条字线,每条字线连接到多个存储单元的行中的每个存储单元的晶体管的栅极;平板电位部分,用于产生参考电位和高DC之间的第一预定电位中间值 电压并将第一电位提供给多个存储单元中的每一个的第一电极;井势部分,用于产生相对于参考电位低于第一电位的第二预定电位,并将第二电位提供给半导体区域 所述多个晶体管中的每一个以及用于使用所述多个晶体管中的每一个的位线上的电位来感测数据的读出放大器部分 一对位线。 阱电位部用作防止漏电流从铁电层流出的防止部。
    • 4. 发明授权
    • Chromane substituted benzimidazole derivatives
    • 苯并二氢苯并咪唑衍生物
    • US07723321B2
    • 2010-05-25
    • US11612583
    • 2006-12-19
    • Takeshi HanazawaHiroki Koike
    • Takeshi HanazawaHiroki Koike
    • A61K31/4184C07D405/02C07D407/02
    • C07D405/12C07D409/12
    • This invention relates to compounds of the formula (I): or a pharmaceutically acceptable salt thereof, wherein: A, B, X, R1, R2, R3, R4, R5, R6, R7 and R8 are each as described herein or a pharmaceutically acceptable salt, and compositions containing such compounds and the use of such compounds in the treatment of a condition mediated by acid pump antagonistic activity such as, but not limited to, as gastrointestinal disease, gastroesophageal disease, gastroesophageal reflux disease (GERD), peptic ulcer, gastric ulcer, duodenal ulcer, NSAID-induced ulcers, gastritis, infection of Helicobacter pylori, dyspepsia, functional dyspepsia, Zollinger-Ellison syndrome, non-erosive reflux disease (NERD), visceral pain, heartburn, nausea, esophagitis, dysphagia, hypersalivation, airway disorders or asthma.
    • 本发明涉及式(I)化合物或其药学上可接受的盐,其中:A,B,X,R 1,R 2,R 3,R 4,R 5,R 6,R 7和R 8各自如本文所述, 可接受的盐和含有这些化合物的组合物,以及这些化合物在治疗由酸泵拮抗活性(例如但不限于胃肠疾病,胃食管疾病,胃食管反流病(GERD)),消化性溃疡 ,胃溃疡,十二指肠溃疡,NSAID诱发的溃疡,胃炎,幽门螺杆菌感染,消化不良,功能性消化不良,佐林格 - 埃利森综合征,非侵蚀性反流病(NERD),内脏痛,胃灼热,恶心,食管炎,吞咽困难,过度激素 ,气道障碍或哮喘。
    • 5. 发明授权
    • Chromane substituted benzimidazole derivatives as acid pump antagonists
    • 色烷取代的苯并咪唑衍生物作为酸泵拮抗剂
    • US07718809B2
    • 2010-05-18
    • US11916671
    • 2006-06-02
    • Hiroki KoikeSachiko Sakakibara
    • Hiroki KoikeSachiko Sakakibara
    • A61K31/4184C07D405/12
    • C07D405/12C07D405/14
    • This invention relates to compounds of the formula (I): or a pharmaceutically acceptable salt thereof, wherein: A, B, X, R1, R2, R3, R4, R5 and R6, R7, R8 and R9 are each as described herein or a pharmaceutically acceptable salt, and compositions containing such compounds and the use of such compounds in the treatment of a condition mediated by acid pump antagonistic activity such as, but not limited to, as gastrointestinal disease, gastroesophageal disease, gastroesophageal reflux disease (GERD), peptic ulcer, gastric ulcer, duodenal ulcer, NSAID-induced ulcers, gastritis, infection of Helicobacter pylori, dyspepsia, functional dyspepsia, Zollinger-Ellison syndrome, non-erosive reflux disease (NERD), visceral pain, heartburn, nausea, esophagitis, dysphagia, hypersalivation, airway disorders or asthma.
    • 本发明涉及式(I)化合物或其药学上可接受的盐,其中:A,B,X,R 1,R 2,R 3,R 4,R 5和R 6,R 7,R 8和R 9各自如本文所述或 药学上可接受的盐,以及含有这些化合物的组合物,以及这些化合物在治疗由酸泵拮抗活性介导的病症中的用途,例如但不限于胃肠道疾病,胃食管疾病,胃食管反流病(GERD), 消化性溃疡,胃溃疡,十二指肠溃疡,NSAID诱导的溃疡,胃炎,幽门螺杆菌感染,消化不良,功能性消化不良,佐林格 - 埃里森综合征,非侵蚀性反流疾病(NERD),内脏痛,胃灼热,恶心,食管炎,吞咽困难 ,过度激活,气道障碍或哮喘。
    • 8. 发明授权
    • N-benzenesulfonyl L-proline compounds as bradykinin antagonists
    • N-苯磺酰基L-脯氨酸化合物作为缓激肽拮抗剂
    • US06734306B2
    • 2004-05-11
    • US10010863
    • 2001-12-05
    • Yasuhiro KatsuMakoto KawaiHiroki KoikeSeiji Nukui
    • Yasuhiro KatsuMakoto KawaiHiroki KoikeSeiji Nukui
    • C07D40114
    • C07D451/02C07D401/12C07D401/14C07D451/04C07D453/02C07D487/08
    • This invention provides a compound of the formula (I): or the pharmaceutically acceptable salts thereof wherein X1 and X2 are halo; R1 and R2 are independently hydrogen or C1-4 alkyl; R3 and R4 are each hydrogen or halo; and R5 is (a) —C3-9 diazacycloalkyl optionally substituted with C5-11 azabicycloalkyl; (b) —C3-9 azacycloalkyl-NH—(C5-11 azabicycloalkyl optionally substituted with C1-4 alkyl); (c) —NH—C1-3 alkyl-C(O)—C5-11 diazabicycloalkyl; (d) —NH—C1-3 alkyl-C(O)—NH—C5-11 azabicycloalkyl, the C5-11 azabicycloalkyl being optionally substituted with C1-4 alkyl; (e) —C3-9 azacycloalkyl optionally substituted with C3-9 azacycloalkyl; or (f) —NH—C1-5 alkyl-NH—C(O)—C4-9 cycloalkyl-NH2. These compounds are useful for the treatment of medical conditions mediated by bradykinin such as inflammation, allergic rhinitis, pain, etc. This invention also provides a pharmaceutical composition comprising the above compound.
    • 本发明提供式(I)化合物或其药学上可接受的盐,其中X 1和X 2为卤素; R 1和R 2独立地是氢或C 1-4烷基; R 3和R 4各自为氢或卤素; (b)-C3-9氮杂环烷基-NH-(任选被C 1-4烷基取代的C 5-10氮杂双环烷基);(c)-C(= NH-C 1-3烷基-C(O)-C 5-11二氮杂双环烷基;(d)-NH-C 1-3烷基-C(O)-NH-C 5-11氮杂双环烷基,C 5-11氮杂双环烷基任选被C 1 -4-烷基;(e)任选被C 3-9氮杂环烷基取代的-C3-9氮杂环烷基; 或(f)-NH-C 1-5烷基-NH-C(O)-C 4-9环烷基-NH 2。这些化合物可用于治疗由缓激肽介导的医学病症如炎症,过敏性鼻炎,疼痛等。 本发明还提供了包含上述化合物的药物组合物。
    • 9. 发明授权
    • 2,3-substituted indole compounds as anti-inflammatory and analgesic agents
    • 2,3-取代的吲哚化合物作为抗炎和止痛剂
    • US06608070B1
    • 2003-08-19
    • US09355494
    • 1999-07-28
    • Kazunari NakaoRodney William StevensKiyoshi KawamuraChikara UchidaHiroki KoikeStephane Caron
    • Kazunari NakaoRodney William StevensKiyoshi KawamuraChikara UchidaHiroki KoikeStephane Caron
    • A01N4390
    • C07D401/06C07D209/18C07D401/10C07D403/06C07D405/06C07D405/10C07D409/06C07D409/10C07D413/06C07D417/06C07D417/10
    • This invention provides a compound of the following formula: or the pharmaceutically acceptable salts thereof wherein Z is OH, C1-6 alkoxy, —NR2R3 or heterocycle; Q is selected from the following: (a) an optionally substituted phenyl, (b) an optionally substituted 6-membered monocyclic aromatic group containing one, two, three or four nitrogen atom(s), (c) an optionally substituted 5-membered monocyclic aromatic group containing one heteroatom selected from O, S and N and optionally containing one, two or three nitrogen atom(s) in addition to said heteroatom, (d) an optionally substituted C3-7 cycloalkyl and (e) an optionally substituted benzo-fuzed heterocycle; R1 is hydrogen, C1-4 alkyl or halo; R2 and R3 are independently hydrogen, OH, C1-4 alkoxy, C1-4 alkyl or C1-4 alkyl substituted with halo, OH, C1-4 alkoxy or CN; X is independently selected from H, halo, C1-4 alkyl, halo-substituted C1-4 alkyl, OH, C1-4 alkoxy, halo-substituted C1-4 alkoxy, C1-4 alkylthio, NO2, NH2, di-(C1-4 alkyl)amino and CN; and n is 0, 1, 2, 3 and 4. This invention also provides a pharmaceutical composition useful for the treatment of a medical condition in which prostaglandins are implicated as pathogens.
    • 本发明提供下式的化合物或其药学上可接受的盐,其中Z是OH,C 1-6烷氧基,-NR 2 R 3或杂环; Q选自以下:(a)任选取代的苯基,(b)含有一个,两个,三个或四个氮原子的任选取代的6元单环芳族基团,(c)任选取代的5元 含有一个选自O,S和N的杂原子,并且除了所述杂原子之外任选含有一个,两个或三个氮原子的单环芳基,(d)任选取代的C 3-7环烷基和(e)任选取代的苯并 杂环杂环 R1是氢,C1-4烷基或卤素; R2和R3独立地是氢,OH,C1-4烷氧基,C1-4烷基或被卤素,OH,C1-4烷氧基或CN取代的C1-4烷基; X独立地选自H,卤素,C 1-4烷基,卤素取代的C 1-4烷基,OH,C 1-4烷氧基,卤素取代的C 1-4烷氧基,C 1-4烷硫基,NO 2,NH 2,二(C 1 -4烷基)氨基和CN; 并且n为0,1,2,3和4.本发明还提供了可用于治疗前列腺素作为病原体的医疗状况的药物组合物。
    • 10. 发明授权
    • Ferroelectric memory device
    • 铁电存储器件
    • US5926413A
    • 1999-07-20
    • US115344
    • 1998-07-15
    • Junichi YamadaHiroki Koike
    • Junichi YamadaHiroki Koike
    • G11C14/00G11C11/22G11C16/06
    • G11C11/22
    • It is an object of the invention to provide a method for generating a reference voltage by means of a sense amplifier in a ferroelectric memory device in a 1T1C type (One Transistor One Capacitor type). The directions of the polarizations of dummy cell DMC1 and DMC2 are set so that they are not inverted in case that data stored therein are read. Transistors T1 and T2 are added to the sense amplifier in order to make it be unbalanced, when a datum stored in a memory cell is read. In case that a datum stored in the memory cell is read, the transistor on the dummy cell side is on and that on the memory cell side is off. Widths of channels of T1 and T2 are selected so that an apparent reference voltage is slightly higher than a voltage read on a bit line in case that the polarization of the dummy cell is not inverted.
    • 本发明的一个目的是提供一种通过1T1C型(一晶体管一电容器型)的铁电存储器件中的读出放大器产生参考电压的方法。 设置虚拟单元DMC1和DMC2的极化方向,使得在读取存储在其中的数据的情况下它们不被反转。 当存储在存储单元中的数据被读取时,晶体管T1和T2被添加到读出放大器以便使其不平衡。 在存储单元中存储的数据被读取的情况下,虚设单元侧的晶体管导通,存储单元侧的晶体管截止。 选择T1和T2的通道的宽度,使得在虚拟单元的极化不反转的情况下,视在参考电压略高于在位线上读取的电压。