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1. 发明申请

US20120247750A1 SERVER DEVICE, CONTROL DEVICE, SERVER RACK, RECORDING MEDIUM STORING COOLING CONTROL PROGRAM, AND COOLING CONTROL METHOD 审中-公开
标题翻译：服务器设备，控制设备，服务器机架，记录存储冷却控制程序和冷却控制方法
公开(公告)号：US20120247750A1
公开(公告)日：2012-10-04
申请号：US13352601
申请日：2012-01-18
申请人： Hiroki Kobayashi , Yuichi Sato , Takahiro Kimura , Jun Taniguchi , Seiji Hibino , Toshio Sugimoto , Yasushi Umezawa , Reiko Kondo , Bernhard Schräder , Gerold Scheidler , Van Son Nguyen , Geoff Poskitt
发明人： Hiroki Kobayashi , Yuichi Sato , Takahiro Kimura , Jun Taniguchi , Seiji Hibino , Toshio Sugimoto , Yasushi Umezawa , Reiko Kondo , Bernhard Schräder , Gerold Scheidler , Van Son Nguyen , Geoff Poskitt
IPC分类号： H05K5/02 , G05D23/00
CPC分类号： H05K7/20836
摘要： A server device includes: electronic devices; a housing that houses the electronic devices; at least one fan; air volume control units configured to adjust a volume of cooling airflow which is generated by rotation of the at least one fan and is ventilated through the electronic devices by opening and closing of respective valves; a valve opening control unit configured to control valve opening degrees of the air volume control units so that temperatures inside the electronic devices become a given target temperature; a fan control unit configured to run the at least one fan at a fan rotating speed that achieves a volume of cooling airflow to make temperatures inside the electronic devices become the given target temperature at a valve opening degree higher than the valve opening degrees that the valve opening control unit controls.
摘要翻译：服务器设备包括：电子设备; 容纳电子设备的房屋; 至少有一个风扇; 空气量控制单元，被配置为调节通过所述至少一个风扇的旋转产生的冷却气流的体积，并且通过打开和关闭各个阀通过电子设备通风; 阀开度控制单元，被配置为控制所述空气量控制单元的阀开度，使得所述电子设备内的温度变为给定的目标温度; 风扇控制单元，其构造成以实现一定体积的冷却气流的风扇转速运行所述至少一个风扇，以使电子设备内部的温度变得高于阀开度高于阀开度的给定目标温度，开启控制单元控制。

2. 发明授权

US07023669B2 Magnetic head using a magneto-resistive effect 失效
标题翻译：磁头使用磁阻效应
公开(公告)号：US07023669B2
公开(公告)日：2006-04-04
申请号：US09815562
申请日：2001-03-23
申请人： Reiko Kondo
发明人： Reiko Kondo
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49044
摘要： A fabricating process of a magnetic head includes the steps of forming a magneto-resistive film, forming a resist film on the magneto-resistive film, patterning the resist film to form a resist pattern, conducting a process while using the resist pattern as a mask, causing a shrinkage in the resist pattern, and conducting a second process while using the shrunken resist pattern as a mask.
摘要翻译：磁头的制造方法包括以下步骤：形成磁阻膜，在磁阻膜上形成抗蚀剂膜，图案化抗蚀剂膜以形成抗蚀剂图案，在使用抗蚀剂图案作为掩模的同时进行工艺导致抗蚀剂图案的收缩，并且使用缩小的抗蚀剂图案作为掩模进行第二工序。

3. 发明授权

US06995960B2 Spin valve magnetoresistive sensor having CPP structure 失效
公开(公告)号：US06995960B2
公开(公告)日：2006-02-07
申请号：US09820047
申请日：2001-03-28
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

4. 发明申请

US20050264953A1 Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和储能装置
公开(公告)号：US20050264953A1
公开(公告)日：2005-12-01
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/14 , H01F10/20 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

5. 发明授权

US06754052B2 Magnetoresistive head and manufacturing method therefor 失效
标题翻译：磁阻头及其制造方法
公开(公告)号：US06754052B2
公开(公告)日：2004-06-22
申请号：US10107084
申请日：2002-03-27
申请人： Hiroshi Asida , Shin Eguchi , Atsushi Tanaka , Reiko Kondo , Yutaka Shimizu
发明人： Hiroshi Asida , Shin Eguchi , Atsushi Tanaka , Reiko Kondo , Yutaka Shimizu
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49046
摘要： A magnetoresistive head including a first magnetic shield, a first electrode terminal provided on the first magnetic shield and having a first width, and a magnetoresistive film provided on the first electrode terminal and having a second width less than or equal to the first width. The magnetoresistive head further includes a second electrode terminal provided on the magnetoresistive film and having a third width less than or equal to the second width, and a second magnetic shield provided on the second electrode terminal. Preferably, the magnetoresistive head further includes a plug electrode for connecting the second electrode terminal to the second magnetic shield, and a plug side wall protective insulating film for covering a side wall of the plug electrode.
摘要翻译：一种磁阻头，包括第一磁屏蔽，设置在第一磁屏蔽上并具有第一宽度的第一电极端子和设置在第一电极端子上并具有小于或等于第一宽度的第二宽度的磁阻膜。磁阻头还包括设置在磁阻膜上并具有小于或等于第二宽度的第三宽度的第二电极端子和设置在第二电极端子上的第二磁屏蔽。优选地，磁阻头还包括用于将第二电极端子连接到第二磁屏蔽的插头电极和用于覆盖插头电极的侧壁的插头侧壁保护绝缘膜。

6. 发明授权

US07116533B2 Magnetoresistive sensor 失效
标题翻译：磁阻传感器
公开(公告)号：US07116533B2
公开(公告)日：2006-10-03
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.
摘要翻译：一种磁阻传感器，包括以下层：第一导体层; 第一反铁磁层; 第一固定铁磁层; 第一非磁性中间层; 自由铁磁层; 第二非磁性中间层; 第二钉扎铁磁层; 第二反铁磁层; 和第二导体层。或者，磁阻传感器可以依次包括以下层：第一导体层; 第一自由铁磁层; 第一非磁性中间层; 第一固定铁磁层; 反铁磁层; 第二钉扎铁磁层; 第二非磁性中间层; 第二自由铁磁层; 和第二导体层。

7. 发明申请

US20050168877A1 Magnetoresistive head 审中-公开
标题翻译：磁阻头
公开(公告)号：US20050168877A1
公开(公告)日：2005-08-04
申请号：US11093514
申请日：2005-03-30
申请人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
发明人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/39 , G11B5/127
摘要： A magnetoresistive head for detecting a magnetic signal on a recording medium as a reproduction signal includes a first magnetic shield, a first electrode terminal disposed on the first magnetic shield, a magnetoresistive film disposed on the first electrode terminal, magnetic domain control films disposed on both sides of the magnetoresistive film for controlling magnetic domains in the magnetoresistive film by applying a bias magnetic field in a first direction to the magnetoresistive film. The magnetoresistive head further includes a second electrode terminal disposed on the magnetoresistive film, and a second magnetic shield disposed on the second electrode terminal. At the time of reproduction of the magnetic signal, a sense current is passed across the first and second electrode terminals in the direction perpendicular to the film plane of the magnetoresistive film so that the direction of a current magnetic field in a medium-opposed end portion of the magnetoresistive film is in the first direction.
摘要翻译：用于检测作为再现信号的记录介质上的磁信号的磁阻头包括第一磁屏蔽，设置在第一磁屏蔽上的第一电极端子，设置在第一电极端子上的磁阻膜，设置在两者上的磁畴控制膜用于通过向磁阻膜施加第一方向的偏置磁场来控制磁阻膜中的磁畴的磁阻膜的侧面。磁阻头还包括设置在磁阻膜上的第二电极端子和设置在第二电极端子上的第二磁屏蔽。在再现磁信号时，感测电流在与磁阻膜的膜平面垂直的方向上穿过第一和第二电极端子，使得中间相对端部中的电流磁场的方向磁阻膜位于第一方向。

8. 发明申请

US20110207284A1 SOLID-STATE MEMORY MANUFACTURING METHOD 有权
标题翻译：固态存储器制造方法
公开(公告)号：US20110207284A1
公开(公告)日：2011-08-25
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

9. 发明授权

US08834691B2 Device for measuring biological sample 有权
标题翻译：用于测量生物样品的装置
公开(公告)号：US08834691B2
公开(公告)日：2014-09-16
申请号：US14001954
申请日：2012-03-28
申请人： Reiko Kondo , Takashi Miki , Atsushi Watanabe
发明人： Reiko Kondo , Takashi Miki , Atsushi Watanabe
IPC分类号： G01N27/327 , G01N33/487 , C12Q1/54 , A61B5/157 , A61B5/145 , A61B5/151 , C12Q1/00 , G01N33/64 , G01N33/66
CPC分类号： G01N27/327 , A61B5/14532 , A61B5/150022 , A61B5/150358 , A61B5/15126 , A61B5/157 , C12Q1/006 , C12Q1/54 , G01N33/4875 , G01N33/64 , G01N33/66 , G01N2333/904
摘要： The objective of the invention is to enhance measurement accuracy in a device for measuring a biological sample. To attain this objective, the invention is provided with a main case (2) having a sensor insertion section (1), a measurement section (7) connected to the sensor insertion section (1), a controller (8) connected to the measurement section (7), and a display (3) connected to the controller (8). An acceleration sensor (5) is furnished for detecting a shock applied to the sensor insertion section (1).
摘要翻译：本发明的目的是提高用于测量生物样品的装置中的测量精度。为了达到这个目的，本发明提供了一种具有传感器插入部分（1）的主壳体（2），连接到传感器插入部分（1）的测量部分（7），连接到测量装置部分（7）和连接到控制器（8）的显示器（3）。提供加速度传感器（5），用于检测施加到传感器插入部分（1）的冲击。

10. 发明授权

US08530314B2 Solid-state memory manufacturing method 有权
标题翻译：固态存储器制造方法
公开(公告)号：US08530314B2
公开(公告)日：2013-09-10
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L21/336
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

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