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    • 4. 发明授权
    • Analog to digital converter
    • 模数转换器
    • US5629702A
    • 1997-05-13
    • US318546
    • 1994-10-05
    • Takahisa KoyasuMitsuhiro Saitou
    • Takahisa KoyasuMitsuhiro Saitou
    • H03M1/14H03M1/36H03M1/42H03M1/66
    • H03M1/42
    • An analog to digital converter comprises: first to n.sup.th comparators, having a tandem structure, for comparing an input voltage signal with first to n.sup.th reference voltages and outputting first to n.sup.th bit outputs respectively, said n being a natural number more than one, said first comparator outputting a most significant bit of said first bit output; a first reference voltage generation circuit for generating said first reference voltage; second to n.sup.th reference voltage generation circuits for generating said second to n.sup.th reference voltages, p.sup.th reference voltages being generated in accordance with outputs of said first to (p-1).sup.th comparators, said p being a natural number and l
    • 一种模数转换器包括:具有串联结构的第一至第n比较器,用于将输入电压信号与第一至第n参考电压进行比较,并分别输出第一至第n位输出,所述n为多于一个的自然数,所述第一 比较器输出所述第一位输出的最高有效位; 用于产生所述第一参考电压的第一参考电压产生电路; 用于产生所述第二至第n参考电压的第二至第n参考电压产生电路,根据所述第一至第(p-1)比较器的输出产生第p参考电压,所述p为自然数,l

    • 6. 发明授权
    • Semiconductor wafer
    • 半导体晶圆
    • US5739546A
    • 1998-04-14
    • US666646
    • 1996-06-18
    • Mitsuhiro SaitouKouji NumazakiHiroyuki Ban
    • Mitsuhiro SaitouKouji NumazakiHiroyuki Ban
    • H01L21/66H01L21/822H01L23/528H01L23/58H01L27/02H01L27/04H01L27/10
    • H01L22/32H01L23/5286H01L27/0218H01L2924/0002H01L2924/3011
    • A semiconductor wafer, having a relatively wide power supply line and ground line, and which can also prevent short-circuiting between these lines. Multiple integrated circuit formation regions, whereon integrated circuits have been formed, are disposed on a semiconductor wafer. A silicon oxide film is formed on a silicon substrate, and a ground line conductor is formed on the silicon oxide film. This ground line conductor is extended over scribe lines. A layer insulation film composed of silicon oxide film is deposited on the silicon oxide film with the ground line conductor interposed therebetween, and a power supply line conductor is formed on the layer insulation film to overlap the ground line conductor. The power supply line conductor is extended over scribe lines. In the integrated circuit formation regions, a power supply pad and the power supply line conductor are electrically connected. A ground pad and the ground line conductor are also electrically connected.
    • 具有相对宽的电源线和接地线的半导体晶片,并且还可以防止这些线之间的短路。 多个集成电路形成区域已经形成集成电路,被布置在半导体晶片上。 在硅衬底上形成氧化硅膜,在氧化硅膜上形成接地线导体。 该接地线导体在划线上延伸。 在氧化硅膜上沉积由氧化硅膜构成的层绝缘膜,其间插入有接地线导体,并且在该层绝缘膜上形成与该接地线导体重叠的电源线导体。 电源线导体在划线上延伸。 在集成电路形成区域中,电源焊盘和电源线导体电连接。 接地焊盘和接地线导体也电连接。