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    • 2. 发明授权
    • Dielectric ceramic composition and ceramic electronic part with same
    • 介电陶瓷组合物与陶瓷电子部件相同
    • US5994253A
    • 1999-11-30
    • US110417
    • 1998-07-06
    • Nobuhiro SasakiKatsuyuki HorieHirokazu Chazono
    • Nobuhiro SasakiKatsuyuki HorieHirokazu Chazono
    • C04B35/00C04B35/46C04B35/468H01B3/12H01G4/12
    • C04B35/4686C04B35/4688H01G4/1227
    • A dielectric ceramic composition is comprised of a crystal structure phase of a tungsten bronze form, one titanate-barium phase or more titanate-barium phases selected from Ba.sub.2 Ti.sub.9 O.sub.20, BaTi.sub.2 O.sub.5, BaTi.sub.4 O.sub.9 and Ba.sub.4 Ti.sub.13 O.sub.30, and a fine crystal phase comprising an oxide of each of at least B, Ag and Mn, in which the crystal structure phase of the tungsten bronze form is formed with a limited amount of a compound oxide of Ba, Nd and Ti as a basic component and contains a limited amount of each of an oxide of at least Bi, Pb, Zn and Si. The dielectric ceramic composition can be fired at a temperature of 920.degree. C. or lower and sintered forming into a ceramic electronic part which has remarkably high dielectric characteristics, such as the dielectric constant of 60 or higher, the Q factor of 1,000 or higher, and the temperature coefficient .tau..epsilon.r of the relative dielectric constant .epsilon.r of .+-.60 ppm/.degree. C. or smaller. The ceramic electronic parts for high frequency are further provided with high electrical features and prepared at low costs.
    • 电介质陶瓷组合物由选自Ba2Ti9O20,BaTi2O5,BaTi4O9和Ba4Ti13O30的钨青铜型晶体结构相,一种钛酸钡 - 钡相或更多种钛酸钡 - 钡相组成,以及包含各自的氧化物的细晶相 最少的B,Ag和Mn,其中青铜形式的晶体结构相形成有限量的作为碱性组分的Ba,Nd和Ti的复合氧化物,并且含有有限量的每种氧化物的 最少的Bi,Pb,Zn和Si。 电介质陶瓷组合物可以在920℃以下的温度下烧结,烧结成陶瓷电子部件,其电介质特性如介电常数为60以上,Q为1000以上, 相对介电常数εr的温度系数τεr为+/- 60ppm /℃以下。 高频陶瓷电子部件还具有较高的电气特性,且成本低廉。
    • 3. 发明授权
    • Laminated electronic part, method for the production thereof, and dielectric ceramic composition
    • 层压电子部件,其制造方法和电介质陶瓷组合物
    • US06346161B1
    • 2002-02-12
    • US09656221
    • 2000-09-06
    • Youichi MizunoYasuyuki InomataToshikazu TobaHirokazu Chazono
    • Youichi MizunoYasuyuki InomataToshikazu TobaHirokazu Chazono
    • B32B3126
    • H01B3/12C04B35/16C04B35/20H01G4/12H01G4/1227
    • The process for the production of a laminated electronic part containing a major component as represented by general formula: X(MgaZn(1−a))xSiOx+2—YAl2O3—ZSrTiO3 (where symbol a is defined by: 0.1≦a≦0.8; and symbol x is defined by: ≦x≦1.5); and an additive component comprised of a compound containing one or more elements selected from Nb, Ta and W; wherein a mole percent ratio of magnesium zinc silicate, (MgaZn(1−a))xSiOx+2, (X), to alumina, Al2O3, (Y), and strontium titanate, SrTiO3, (Z), each of which constitutes said major component, is set to be located in a region enclosed by a polygon having apexes at points A, B, C and D, as defined below, in a three-component composition map: A (94.9, 0.1, 5.0) B (85.0, 10.0, 5.0) C (65.0, 10.0, 25.0) D (65.0, 0.1, 34.9); and the additive component is contained at a rate of 0.01 to 0.2 mole percent, when translated into NbO5/2, TaO5/2 or WO3.
    • 制造包含以下通式表示的主要组分的层压电子部件的方法(其中符号a由下式定义:0.1 <= a <= 0.8;符号x由以下定义:<= x <= 1.5); 以及由含有选自Nb,Ta和W中的一种或多种元素的化合物组成的添加剂组分;其中硅酸镁锌(MgaZn(1-a))xSiOx + 2,(X)与氧化铝的摩尔百分比, 每个构成所述主要成分的Al 2 O 3,(Y)和钛酸锶SrTiO 3,(Z)被设定为位于由点A,B,C和D的顶点包围的区域中,如所定义 在三组分组成图中,添加组分的含量为0.01-0.2摩尔%时,转化为NbO5 / 2,TaO5 / 2或WO3。
    • 6. 发明授权
    • Multi-layer capacitor and method for manufacturing same
    • 多层电容器及其制造方法
    • US06710998B1
    • 2004-03-23
    • US10610548
    • 2003-07-02
    • Kenji SaitoHirokazu Chazono
    • Kenji SaitoHirokazu Chazono
    • H01G420
    • H01G4/30H01G4/35H01G4/385
    • A multi-layer capacitor includes a plurality of dielectric layers, a pair of external electrodes and a multiplicity of internal electrode layers, each internal electrode layer being interposed between every two neighboring dielectric layers. Said two neighboring internal electrode layers and the dielectric layer disposed therebetween form a unit capacitor so that the multiplicity of internal electrode layers and the dielectric layers therebetween constitute a stack of three or more vertically stacked unit capacitors. The electrostatic capacitance of the unit capacitor located at a center of the stack is greater than those of the unit capacitors located at an is upper end and a lower end of the stack.
    • 多层电容器包括多个电介质层,一对外部电极和多个内部电极层,每个内部电极层插在每两个相邻的电介质层之间。 所述两个相邻的内部电极层和设置在其间的电介质层形成单位电容器,使得多个内部电极层和其间的电介质层构成三个或更多个垂直堆叠的单位电容器的堆叠。 位于堆叠中心的单位电容器的静电电容大于位于堆叠的上端和下端的单位电容器的静电电容。