专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090272407A1 SUBSTRATE CLEANING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：基板清洗方法和开发设备
公开(公告)号：US20090272407A1
公开(公告)日：2009-11-05
申请号：US12503412
申请日：2009-07-15
申请人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/04 , B08B1/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

2. 发明授权

US07901514B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07901514B2
公开(公告)日：2011-03-08
申请号：US12503412
申请日：2009-07-15
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

3. 发明授权

US07604013B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07604013B2
公开(公告)日：2009-10-20
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.
摘要翻译：一种清洁方法，通过除去溶解产物，通过除去半导体晶片的表面，通过利用显影处理来处理半导体晶片的表面，所述显影处理通过用显影剂润湿暴露的膜来形成半导体晶片上形成的曝光膜，从半导体晶片的表面。将清洗液通过清洗液倒出嘴注入到通过显影处理处理的旋转晶片的中心部分上，以将清洁液体以薄膜的形式展开在晶片的表面上。然后，移动清洗液倾倒嘴，在晶片的中心部分产生干燥区域，以1500rpm的速度旋转晶片，使干燥面积扩大。清洗液倾倒嘴以喷嘴移动速度移动到足够高的水平，以将清洁液注入位于干燥区域的边缘之前，并且在清洁液体倾倒嘴到达预定位置时停止清洗液体的倾倒距离晶片的中心80mm，或距离晶片的周边边缘朝向晶片中心5mm以上。清洗液可以通过预先设置在预定位置的另一个清洗液倒出喷嘴注入，并且清洗液通过清洗液倒出嘴可以在干燥区域的边缘到达清洗液倒入的部分之前立即停止通过清洗液倒出嘴。优选地，将气体瞬间吹到晶片的中心部分，以在干燥区域之前形成核心。

4. 发明申请

US20060048792A1 Substrate cleaning method and developing apparatus 有权
公开(公告)号：US20060048792A1
公开(公告)日：2006-03-09
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： C23G1/00 , C03C23/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.

5. 发明授权

US08147153B2 Rinsing method, developing method, developing system and computer-read storage medium 有权
标题翻译：冲洗方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US08147153B2
公开(公告)日：2012-04-03
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03C1/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

6. 发明申请

US20070119479A1 Rinse method and developing apparatus 有权
标题翻译：冲洗方法和显影装置
公开(公告)号：US20070119479A1
公开(公告)日：2007-05-31
申请号：US11602390
申请日：2006-11-21
申请人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
发明人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
IPC分类号： B08B7/04 , B08B3/00
CPC分类号： H01L21/67051 , H01L21/67253
摘要： A rinse method for rinsing a substrate having an exposure pattern thereon developed includes presetting conditions for a rinse process according to surface states of the substrate, measuring a surface state of the substrate, selecting a corresponding condition for the rinse process based on the measured surface state of the substrate, and performing the rinse process under the selected condition.
摘要翻译：用于漂洗其上具有曝光图案的基板的冲洗方法包括根据基板的表面状态的冲洗过程的预设条件，测量基板的表面状态，基于测量的表面状态选择冲洗过程的相应条件并在所选择的条件下进行冲洗过程。

7. 发明授权

US08029624B2 Rinse method and developing apparatus 有权
标题翻译：冲洗方法和显影装置
公开(公告)号：US08029624B2
公开(公告)日：2011-10-04
申请号：US11602390
申请日：2006-11-21
申请人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
发明人： Kousuke Yoshihara , Junji Nakamura , Hirofumi Takeguchi , Taro Yamamoto
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , H01L21/67253
摘要： A rinse method for rinsing a substrate having an exposure pattern thereon developed includes presetting conditions for a rinse process according to surface states of the substrate, measuring a surface state of the substrate, selecting a corresponding condition for the rinse process based on the measured surface state of the substrate, and performing the rinse process under the selected condition.
摘要翻译：用于漂洗其上具有曝光图案的基板的冲洗方法包括根据基板的表面状态的冲洗过程的预设条件，测量基板的表面状态，基于测量的表面状态选择冲洗过程的相应条件并在所选择的条件下进行冲洗过程。

8. 发明授权

US07841787B2 Rinsing method, developing method, developing system and computer-read storage medium 有权
标题翻译：冲洗方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US07841787B2
公开(公告)日：2010-11-30
申请号：US11554192
申请日：2006-10-30
申请人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03C1/00 , G03C5/18 , G03C5/26 , B08B7/00 , B05D3/12
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

9. 发明授权

US08026048B2 Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
发明人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
IPC分类号： G03F7/00 , G03F7/26 , G03F7/30 , B05C5/02
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

10. 发明授权

US07896562B2 Developing method, developing apparatus and storage medium 有权
标题翻译：显影方法，显影装置和存储介质
公开(公告)号：US07896562B2
公开(公告)日：2011-03-01
申请号：US12173285
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03B27/32 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A method of supplying a developing solution is provided. The method includes supplying a developing solution onto a substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part. The method further includes shifting a position of the ribbon-like region in which the developing solution is supplied. Developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force.
摘要翻译：提供了提供显影液的方法。该方法包括从第一显影液喷嘴将显影液供给到基板上，以便在基板表面上形成带状区域，同时通过基板保持部件绕垂直轴线旋转基板。该方法还包括移动其中供应显影液的带状区域的位置。显影溶液由第二显影剂溶液喷嘴提供，以在基材的中心部分上形成圆形区域，或形成比从第一显影剂供应的显影溶液的带状区域的长度短的带状区域喷嘴。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式