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    • 1. 发明授权
    • Processing apparatus
    • 处理装置
    • US06802934B2
    • 2004-10-12
    • US10378890
    • 2003-03-05
    • Hiroaki SaekiKeiichi MatsushimaTeruo AsakawaMasaki Narushima
    • Hiroaki SaekiKeiichi MatsushimaTeruo AsakawaMasaki Narushima
    • H01L2100
    • H01L21/67766H01L21/67167H01L21/67201H01L21/67742H01L21/67745Y10S414/135Y10S414/136
    • Two load lock chambers 130 and 132 are arranged between a first transfer chamber 122 and a second transfer chamber 133. Each of the load lock chambers is capable of accommodating a single wafer W. The first transfer chamber 122 is provided with a first transfer unit 124 having two substrate holders 124a, 124b each capable of holding a single object to be processed, in order to transport the wafer W among a load port site 120, the first load lock chamber 130, the second load lock chamber 132 and a positioning unit 150. The second transfer chamber 133 is provided with a second transfer unit 156 having two substrate holders 156a, 156b each capable of holding the single object to be processed, in order to transport the wafer between the first load lock chamber 130, the second load lock chamber 132 and respective vacuum processing chambers 158 to 164. Since the volume of each load lock chamber can be minimized, it is possible to perform the prompt control of atmospheres in the load lock chambers. Additionally, it is possible to perform the delivery of the wafers promptly.
    • 两个负载锁定室130和132设置在第一传送室122和第二传送室133之间。每个负载锁定室能够容纳单个晶片W.第一传送室122设置有第一传送单元124 具有能够保持单个待处理物体的两个基板保持件124a,124b,以便在载荷端口位置120,第一加载锁定室130,第二加载锁定室132和定位单元150之间输送晶片W 第二传送室133设置有第二传送单元156,第二传送单元156具有两个能够保持单个待处理物体的基板保持器156a,156b,以便在第一加载锁定室130,第二加载锁 室132和相应的真空处理室158至164.由于每个负载锁定室的体积可以最小化,因此可以对负载锁中的气氛进行即时控制 mbers。 此外,可以及时执行晶片的传送。
    • 2. 发明授权
    • Cassette chamber
    • 盒式室
    • US5857827A
    • 1999-01-12
    • US910057
    • 1997-08-12
    • Teruo AsakawaHiroaki SaekiYoji IizukaKeiichi Matsushima
    • Teruo AsakawaHiroaki SaekiYoji IizukaKeiichi Matsushima
    • B65G49/07H01L21/677B25J11/00
    • H01L21/67775Y10S414/14
    • A cassette chamber according to the present invention comprises a housing defining a space stored with a cassette for holding a plurality of objects of treatment, a lift base having a rotatable shaft and located in the housing for up-and-down motion, an auxiliary base fixed to the shaft and inclined at a predetermined angle to the longitudinal direction of the shaft, a cassette support having a bottom support portion set on the lift base and bearing the bottom face of the cassette and a back support portion rotatably supported by the auxiliary base and bearing the back face of the cassette, a rotation mechanism for rotating the shaft as the lift base ascends or descends, thereby rotating the auxiliary base and the cassette support between a first position inside the housing and a second position outside the housing, and a support section for keeping the back support portion of the cassette support parallel to the shaft by engaging the back support portion being rotated to the second position by the rotation mechanism and causing the back support portion to rotate relatively to the auxiliary base.
    • 根据本发明的盒室包括限定存储有用于保持多个处理对象的盒的空间的壳体,具有可旋转轴并位于壳体中用于上下运动的升降台,辅助基座 固定在轴上并且以与轴的纵向方向成预定角度倾斜;盒支架,其具有设置在提升基座上并承载盒的底面的底部支撑部分,以及由辅助基座可旋转地支撑的后支撑部分 并且承载所述盒的后表面,所述旋转机构用于当所述提升基座上升或下降时使所述轴旋转,从而使所述辅助基座和所述盒支撑件在所述壳体内部的第一位置和所述壳体外部的第二位置之间旋转, 支撑部分,用于通过使旋转的第二支撑部分接合到第二支杆上来保持盒支撑件的后支撑部分平行于轴 并且使后支撑部相对于辅助基座旋转。
    • 3. 发明申请
    • Semiconductor processing system
    • 半导体处理系统
    • US20050006230A1
    • 2005-01-13
    • US10487241
    • 2002-08-29
    • Masaki NarushimaHiroaki Saeki
    • Masaki NarushimaHiroaki Saeki
    • B65G49/00C23C14/56H01L21/00H01L21/02H01L21/677C25B9/00H01L21/68
    • H01L21/67167H01L21/67017H01L21/67184
    • A semiconductor processing system includes a common transfer chamber (34) having first and second compartments (46, 48) partitioned by a partition wall (44). First and second vacuum processing apparatuses (32E, 32A) are respectively connected to the first and second compartments (46, 48). A pressure control section (PCS) controls the pressures inside the first and second compartments (46, 48). The pressure control section (PCS) includes first and second vacuum pumps (68, 70) respectively connected to the first and second compartments (46, 48), and a line (76) connecting the delivery side of the second vacuum pump (70) to the suction side of the first vacuum pump (68). The pressure control section (PCS) performs a setting such that a second ultimate pressure or lowest operational pressure of the second compartment (48) is lower than a first ultimate pressure or lowest operational pressure of the first compartment (46).
    • 半导体处理系统包括具有由分隔壁(44)分隔开的第一和第二隔室(46,48)的公共传送室(34)。 第一和第二真空处理装置(32E,32A)分别连接到第一和第二隔室(46,48)。 压力控制部分(PCS)控制第一和第二隔室(46,48)内部的压力。 压力控制部(PCS)包括分别连接到第一和第二隔室(46,48)的第一和第二真空泵(68,70)和连接第二真空泵(70)的输出侧的管线(76) 到第一真空泵68的吸入侧。 压力控制部(PCS)执行使得第二隔室(48)的第二极限压力或最低操作压力低于第一隔室(46)的第一极限压力或最低操作压力的设定。
    • 4. 发明授权
    • Semiconductor processing system
    • 半导体处理系统
    • US07090741B2
    • 2006-08-15
    • US10487241
    • 2002-08-29
    • Masaki NarushimaHiroaki Saeki
    • Masaki NarushimaHiroaki Saeki
    • H01L21/306C23C14/35C23C16/00
    • H01L21/67167H01L21/67017H01L21/67184
    • A semiconductor processing system includes a common transfer chamber (34) having first and second compartments (46, 48) partitioned by a partition wall (44). First and second vacuum processing apparatuses (32E, 32A) are respectively connected to the first and second compartments (46, 48). A pressure control section (PCS) controls the pressures inside the first and second compartments (46, 48). The pressure control section (PCS) includes first and second vacuum pumps (68, 70) respectively connected to the first and second compartments (46, 48), and a line (76) connecting the delivery side of the second vacuum pump (70) to the suction side of the first vacuum pump (68). The pressure control section (PCS) performs a setting such that a second ultimate pressure or lowest operational pressure of the second compartment (48) is lower than a first ultimate pressure or lowest operational pressure of the first compartment (46).
    • 半导体处理系统包括具有由分隔壁(44)分隔开的第一和第二隔室(46,48)的公共传送室(34)。 第一和第二真空处理设备(32E,32A)分别连接到第一和第二隔室(46,48)。 压力控制部分(PCS)控制第一和第二隔室(46,48)内部的压力。 压力控制部(PCS)包括分别连接到第一和第二隔室(46,48)的第一和第二真空泵(68,70)和连接第二真空泵(70)的输出侧的管线(76) 到第一真空泵68的吸入侧。 压力控制部(PCS)执行使得第二隔室(48)的第二极限压力或最低操作压力低于第一隔室(46)的第一极限压力或最低操作压力的设定。
    • 6. 发明授权
    • Stage having electrostatic chuck and plasma processing apparatus using
same
    • 具有静电卡盘和使用其的等离子体处理装置的阶段
    • US5460684A
    • 1995-10-24
    • US160842
    • 1993-12-03
    • Hiroaki SaekiTeruo AsakawaNoboru MasuokaMasaki Kondo
    • Hiroaki SaekiTeruo AsakawaNoboru MasuokaMasaki Kondo
    • C23C16/458H01L21/683C23F1/02C23C14/50C23C16/52
    • H01L21/6831C23C16/4586H01L21/6833
    • The plasma etching apparatus for a semiconductor wafer includes a susceptor provided in the vacuum process chamber. An electrostatic chuck for attracting and holding the wafer is provided on the susceptor. The electrostatic chuck comprises a chuck electrode provided on the susceptor via an insulative layer. The chuck electrode is connected to the positive terminal of the DC power supply via a switch. The chuck electrode is coated with a resistive layer, and the wafer is placed directly on the resistive layer. The resistive layer exhibits an electric resistivity of 1.times.10.sup.10 .OMEGA..multidot.cm to 1.times.10.sup.12 .OMEGA..multidot.cm in a temperature range for etching. The resistive layer is formed to have such a surface roughness that a center line average hight falls within a range of 0.1 to 1.5 .mu.m. When the potential of the positive terminal of the DC power supply is applied to the chuck electrode, and the wafer is grounded via plasma, a contact potential difference is created between the surface of the resistive layer and the rear surface of the wafer, generating an electrostatic attractive force, so that the wafer is attracted and held by the resistive layer.
    • 用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。 用于吸引和保持晶片的静电卡盘设置在基座上。 静电卡盘包括通过绝缘层设置在基座上的卡盘电极。 卡盘电极通过开关连接到直流电源的正极端子。 卡盘电极涂覆有电阻层,晶片直接放置在电阻层上。 在蚀刻的温度范围内,电阻层的电阻率为1×10 10欧米伽xcm至1×10 12欧米伽×厘米。 电阻层形成为具有中心线平均高度在0.1〜1.5μm的范围内的表面粗糙度。 当直流电源的正端子的电位施加到卡盘电极并且晶片通过等离子体接地时,在电阻层的表面和晶片的后表面之间产生接触电位差,从而产生 静电吸引力,使得晶片被电阻层吸引并保持。
    • 7. 发明授权
    • Transfer apparatus
    • 转运设备
    • US06988867B2
    • 2006-01-24
    • US10387467
    • 2003-03-14
    • Hiroaki SaekiTeruo Asakawa
    • Hiroaki SaekiTeruo Asakawa
    • B25J18/04
    • B25J9/107H01L21/67742Y10T74/20354
    • There is provided a transfer apparatus capable of increasing the length of a transfer arm when it is extended, without increasing the size of the transfer arm when it is contracted. The transfer apparatus 4 comprising a transfer arm 17 which comprises: two rotating shafts 5 and 6 arranged coaxially or in parallel; a pair of first arms 7 and 8, one end portions of which are fixed to the rotating shafts 5 and 6, respectively; a pair of second arms 10 and 11, one end portions of which are connected to the other end portions of the pair of first arms 7 and 8 by means of pins, respectively; and a holding portion 14 for holding an object w to be processed, the holding portion 14 being connected to each of the other end portions of the pair of second arms 10 and 11 by means of pins, wherein the second arms 10 and 11 cross each other.
    • 提供了一种传送装置,其能够在传送臂伸长时增加传送臂的长度,而不会在传送臂收缩时增大传送臂的尺寸。 传送装置4包括传送臂17,其包括:同轴或平行布置的两个旋转轴5和6; 一对第一臂7和8,其一端部分别固定在旋转轴5和6上; 一对第二臂10和11,其一端分别通过销与第一臂7和8的另一端连接; 以及用于保持待加工物体w的保持部分14,保持部分14通过销与每对第二臂10和11的另一个端部连接,其中第二臂10和11各自交叉 其他。
    • 8. 发明授权
    • Transfer arm apparatus and semiconductor processing system using the same
    • 转臂装置及使用其的半导体处理系统
    • US6068704A
    • 2000-05-30
    • US969945
    • 1997-11-25
    • Hiroaki SaekiTeruo Asakawa
    • Hiroaki SaekiTeruo Asakawa
    • B25J9/06B25J17/00B65G49/07C23C16/54H01L21/677C23C16/00
    • C23C16/54H01L21/67742Y10S414/139
    • A transfer arm apparatus has first, second, and third arms. The second arm has a proximal link pivotally mounted on the distal end of the first arm, and first and second links connecting the proximal link and the third arm to constitute a link mechanism. The first and second links form a first pair of parallel links, and the proximal link and the third link form a second pair of parallel links connecting the first pair of parallel links. A transmission is contained in the first arm, and has an axial shaft and a hollow axial shaft coaxially arranged at the distal end of the first arm. The axial shaft transmits a rotational driving force to the first pair of parallel links, and the hollow axial shaft transmits a rotational driving force to the second pair of parallel links through the proximal link.
    • 传送臂装置具有第一,第二和第三臂。 第二臂具有枢转地安装在第一臂的远端上的近端连杆,以及连接近端连杆和第三臂以构成连杆机构的第一和第二连杆。 所述第一和第二连杆形成第一对平行连杆,并且所述近端连杆和所述第三连杆形成连接所述第一对平行连杆的第二对并联连杆。 变速器包含在第一臂中,并且具有同轴地布置在第一臂的远端处的轴向轴和中空轴向轴。 轴向轴将旋转驱动力传递到第一对平行连杆,并且空心轴向轴通过近端连杆传递旋转驱动力到第二对平行连杆。
    • 9. 发明授权
    • Wafer for carrying semiconductor wafers and method detecting wafers on
carrier
    • 用于承载半导体晶片的晶片和在载体上检测晶片的方法
    • US6053983A
    • 2000-04-25
    • US71833
    • 1998-05-04
    • Hiroaki SaekiTeruo Asakawa
    • Hiroaki SaekiTeruo Asakawa
    • H01L21/00C23C16/00B65G23/00B66C23/00
    • H01L21/67265
    • A plurality of projections 21 is disposed on a inner surface of a lid 20 which is detachably attached to a carrier body 10. Each projection 21 has a tapered end part 22 with inclined surfaces 23, 24. The surfaces 23, 24 are in the form of semitransparent mirror. A Light emitting device 47 projects light beam which travels horizontally to the projection 21 from outside of the lid 20. When a wafer is not present in slots 15 of the carrier body, the light beam travels to upper and lower adjacent photoelectric devices 48, 48 via the upper and lower adjacent projections 21. The semitransparent mirror 23, 24 changes the light beam traveling direction. When the wafer is present in the slots 15, the light beam is intercepted by the wafer, and the photoelectric devices 48 does not receive the light beam. In aforementioned manner, whether a wafer is present or not in the slots 15 can be detected.
    • 多个突起21设置在可拆卸地附接到托架主体10的盖20的内表面上。每个突起21具有倾斜表面23,24的锥形端部22.表面23,24的形式 的半透明镜。 发光装置47投射从盖20的外部水平地向突起21行进的光束。当晶片不存在于载体主体的狭槽15中时,光束行进到上下相邻的光电装置48,48 半透明反射镜23,24改变光束行进方向。 当晶片存在于槽15中时,光束被晶片截获,并且光电器件48不接收光束。 以上述方式,可以检测槽15中是否存在晶片。
    • 10. 发明授权
    • Multi-chamber treatment system
    • 多室处理系统
    • US5934856A
    • 1999-08-10
    • US837948
    • 1997-04-28
    • Teruo AsakawaHiroaki Saeki
    • Teruo AsakawaHiroaki Saeki
    • B65G49/07C23C16/54F16K51/02H01L21/00H01L21/677
    • H01L21/67161C23C16/54F16K51/02H01L21/67126H01L21/67167H01L21/67184H01L21/67196H01L21/67201H01L21/67742H01L21/67745Y10S414/139
    • Vacuum process chambers are increased or decreased in number when the kind or order of processes is changed, and the shape and size of the transfer chamber are changed with the increase or decrease of the number of the vacuum process chambers, without entailing any change in a load-lock chamber and a transfer arm. The transfer arm has a minimum radius of rotation such that the arm can rotate in a transfer chamber of a minimum size corresponding to a minimum number of vacuum process chambers and a maximum arm reach such that the arm can deliver an object to-be-treated between each vacuum process chamber and a transfer chamber of a maximum size corresponding to a maximum number of vacuum process chambers. Thus, even though the number of the vacuum process chambers are increased or decreased with the change of the processes, it is necessary only that the shape and size of the transfer chamber be changed, and the other components, such as the load-lock chamber, transfer arm, etc., can be used in common, so that the manufacture and assembling of the system are very easy, ensuring a reduction in cost. Also, reduced-pressure treatment apparatus and a normal-pressure treatment apparatus are connected to each other by means of the load-lock chamber for replacement between the atmosphere and vacuum.
    • 当处理的种类或顺序改变时,真空处理室的数量增加或减少,并且传送室的形状和尺寸随着真空处理室的数量的增加或减少而改变,而不会导致任何变化 负载锁定室和传送臂。 传送臂具有最小的旋转半径,使得臂可以在传送室中旋转,其最小尺寸对应于最小数量的真空处理室,并且最大臂达到,使得臂可以传递被处理物体 在每个真空处理室和对应于最大数量的真空处理室的最大尺寸的传送室之间。 因此,尽管随着工艺的变化,真空处理室的数量增加或减少,但只需要改变传送室的形状和尺寸,并且其它部件如负载锁定室 ,传送臂等,可以共同使用,使系统的制造和组装非常容易,确保降低成本。 此外,减压处理装置和常压处理装置通过用于更换大气和真空的装载锁定室彼此连接。