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    • 7. 发明授权
    • Method of producing silicon nitride sintered body
    • 生产氮化硅烧结体的方法
    • US5066438A
    • 1991-11-19
    • US455034
    • 1989-12-22
    • Michitaka SatoHiroaki Nishio
    • Michitaka SatoHiroaki Nishio
    • C04B35/593
    • C04B35/593
    • A method of producing a silicon nitride sintered body which comprises using an amorphous Si.sub.3 N.sub.4 powder having a mean particle size of 5 to 50 nm, a nitrogen content of 30 to 39 wt. %, an oxygen content of 1 to 10 wt. %, the sum of the nitrogen content and the oxygen content being 38 to 42 wt. % and an unavoidable impurities content of less than 500 ppm as the raw material to form a molded body, sealing the molded body in a capsule and treating it with HIP in the range of 1000.degree. to 1800.degree. C. and 1000 to 2000 atm until the density becomes 3.1 to 3.4 g/cm.sup.3. In the method of the invention, active surface energy of silicon nitride powder is utilized as the driving force for sintering due to using a super fine powder. The super fine powder improves sintering ability by uniform mixing. The sintering ability is further improved by substituting a suitable amount of the nitrogen in the silicon nitride with oxygen. By the above means, the sintering strength can be secured under not severe sintering conditions. As a result, a sintering aid can be omitted.