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    • 10. 发明申请
    • Photovoltaic device
    • 光伏装置
    • US20060209915A1
    • 2006-09-21
    • US11350899
    • 2006-02-10
    • Masaki Shima
    • Masaki Shima
    • H01S5/00
    • H01L31/03921H01L31/02363H01L31/075H01L31/202Y02E10/548Y02P70/521
    • An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At least one of the first and third semiconductor layers includes an amorphous semiconductor layer. The amorphous semiconductor layer has a larger band gap than a non-monocrystal semiconductor layer having crystallinity. Accordingly, it is possible to increase a built-in electric field that is a potential difference between the Fermi level of the first semiconductor layer of the first conductivity type and the Fermi level of the third semiconductor layer of the second conductivity type.
    • 本发明的一个方面提供一种具有第一导电类型的第一半导体层和第二导电类型的第三半导体层的光伏器件。 第一和第三半导体层中的至少一个包括非晶半导体层。 非晶半导体层具有比具有结晶性的非单晶半导体层更大的带隙。 因此,可以增加作为第一导电类型的第一半导体层的费米能级与第二导电类型的第三半导体层的费米能级之间的电位差的内置电场。