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1. 发明申请

US20120309883A1 RELEASE AGENT COMPOSITION 有权
标题翻译：释放代理成分
公开(公告)号：US20120309883A1
公开(公告)日：2012-12-06
申请号：US13586064
申请日：2012-08-15
申请人： Hiroaki INOUE , Shuichiro Sugimoto
发明人： Hiroaki INOUE , Shuichiro Sugimoto
IPC分类号： C09D133/10 , C08K5/06
CPC分类号： C08F220/22 , C09D133/16 , C08F2220/1891 , C08F214/08 , C08F220/24 , C08F222/14 , C08F220/20 , C08F222/385
摘要： The present invention provides a release agent composition which can impart moderate adhesion and releasability to the surface of articles such as protective materials for adhesive face of repositional notes, pressure-sensitive adhesive sheets and tapes, release films and release paper, and which has a low environmental burden, and its production process.The release agent composition of the present invention is characterized by comprising a fluorocopolymer having structural units based on a monomer (a) having a C1-6 polyfluoroalkyl group and structural units based on a (meth)acrylate (b) having a C18-30 alkyl group, and a medium.
摘要翻译：本发明提供一种剥离剂组合物，其能够对制品的表面赋予适度的粘合性和脱模性，例如用于复位粘合剂的表面的保护材料，压敏粘合片和带，脱模膜和剥离纸，并且具有低的环境负担及其生产过程。本发明的脱模剂组合物的特征在于含有具有基于具有C1-6多氟烷基的单体（a）的结构单元的含氟共聚物和基于具有C18-30烷基的（甲基）丙烯酸酯（b）的结构单元，组和媒介。

2. 发明申请

US20080209151A1 Storage device and control method of the storage device 失效
标题翻译：存储设备的存储设备和控制方法
公开(公告)号：US20080209151A1
公开(公告)日：2008-08-28
申请号：US12006886
申请日：2008-01-07
申请人： Hiroaki INOUE
发明人： Hiroaki INOUE
IPC分类号： G06F12/00
CPC分类号： G06F3/0659 , G06F3/061 , G06F3/0658 , G06F3/068 , G11B19/044 , G11B20/1215 , G11B2020/10694 , G11B2020/10759 , G11B2020/10805 , G11B2220/2516
摘要： A storage device includes a storage medium, a nonvolatile memory, a head, a driving unit, and a processor. The driving unit drives the storage medium. The processor controls the storage device according to a process. The process includes receiving the data transmitted from the host, storing the data received into the nonvolatile memory, estimating a period of time from a time point of the reception of the data to a time point at which a usage rate of the nonvolatile memory becomes 100%, controlling the driving unit on the basis of comparison of the estimated period of time with a period of time before the storage medium is accessible, and writing the data stored in the nonvolatile memory to the storage medium by controlling the head in accordance with the control of the driving unit.
摘要翻译：存储装置包括存储介质，非易失性存储器，磁头，驱动单元和处理器。驱动单元驱动存储介质。处理器根据过程控制存储设备。该处理包括接收从主机发送的数据，将接收的数据存储到非易失性存储器中，估计从接收数据的时间点到非易失性存储器的使用率变为100的时间点的时间段％，基于估计时间段与存储介质可访问之前的时间段的比较来控制驱动单元，以及根据存储介质的控制将存储在非易失性存储器中的数据写入存储介质控制驱动单元。

3. 发明申请

US20130194690A1 MAGNETIC DISK APPARATUS AND DATA REFRESH METHOD 有权
标题翻译：磁盘设备和数据刷新方法
公开(公告)号：US20130194690A1
公开(公告)日：2013-08-01
申请号：US13563486
申请日：2012-07-31
申请人： Hiroaki INOUE
发明人： Hiroaki INOUE
IPC分类号： G11B27/36
CPC分类号： G11B20/1879 , G11B5/012 , G11B5/09 , G11B20/10009
摘要： According to at least one embodiment, a magnetic disk apparatus includes a disk, a random number generator, a determination module, and a refresh module. The disk includes a plurality of tracks. A random number generator generates a random number within a range of N integers in accordance with writing to a first area of a first track of the plurality of tracks. A determination module determines whether the generated random number includes a predetermined number. A refresh module refreshes a second area of a second track near the first track based on a result of determination of the determination module. The second area corresponds to the first area.
摘要翻译：根据至少一个实施例，磁盘装置包括盘，随机数发生器，确定模块和刷新模块。盘包括多个轨道。随机数生成器根据写入多个轨道的第一轨道的第一区域而在N个整数的范围内生成随机数。确定模块确定所生成的随机数是否包括预定数目。基于确定模块的确定结果，刷新模块刷新靠近第一轨道的第二轨道的第二区域。第二区域对应于第一区域。

4. 发明申请

US20130074801A1 INTERNAL COMBUSTION ENGINE 有权
标题翻译：内燃机
公开(公告)号：US20130074801A1
公开(公告)日：2013-03-28
申请号：US13611218
申请日：2012-09-12
申请人： Hiroaki INOUE
发明人： Hiroaki INOUE
IPC分类号： F02B9/00
CPC分类号： F02B17/00 , F01L1/00 , F01L13/0021 , F01L13/0063 , F01L2001/0537 , F01L2013/0073 , F01L2800/06 , F02B19/14 , F02B31/00 , F02D13/0265 , F02D41/006 , F02D41/30 , F02D41/3023 , F02D41/3035 , F02D2041/001 , F02D2041/3052 , F02F3/26 , F02M61/18 , Y02T10/18 , Y02T10/47
摘要： There is provided efficient compression auto-ignition combustion over intermediate load range extended towards a low and high load range. An internal combustion engine enables compression auto-ignition combustion by securing a so-called sealed duration created by negative valve overlap. It includes a cylinder head, a cylinder, a piston in the cylinder having a top coupled to the cylinder head, a combustion chamber between an inner surface of a cylinder head and a top of the piston, and intake and exhaust valves. Two intake valves are arranged per each combustion chamber and made to differ in valve lift.
摘要翻译：在中等负载范围内提供了有效的压缩自点火燃烧，向低负载范围扩展。内燃机通过确保由负阀重叠产生的所谓的密封持续时间来实现压缩自动点火燃烧。它包括气缸盖，气缸，气缸中的活塞，具有联接到气缸盖的顶部，在气缸盖的内表面和活塞的顶部之间的燃烧室，以及进气门和排气阀。每个燃烧室布置两个进气阀，并使气门升程不同。

5. 发明申请

US20110223702A1 MANUFACTURING METHOD OF MEMS DEVICE, AND SUBSTRATE USED THEREFOR 失效
标题翻译： MEMS器件的制造方法及其使用的衬底
公开(公告)号：US20110223702A1
公开(公告)日：2011-09-15
申请号：US13012104
申请日：2011-01-24
申请人： Hiroaki INOUE , Tadashi Nakatani , Satoshi Ueda
发明人： Hiroaki INOUE , Tadashi Nakatani , Satoshi Ueda
IPC分类号： H01L21/02 , B32B3/30
CPC分类号： H01H59/0009 , Y10T428/24521 , Y10T428/24562
摘要： A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate on which the cavity is formed and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface on which the thermally-oxidized film for the movable portion is formed; forming a sacrifice layer on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
摘要翻译：一种MEMS器件的制造方法，包括：准备具有形成有空腔的第一基板的基板和与形成有所述空腔的所述第一基板的一侧接合的第二基板，所述第二基板具有狭缝，在与空腔相对应的位置限定可移动部分，所述第二基板包括其面向所述第一基板的第一表面，所述第二基板具有在对应于所述可动部分的位置中选择性地形成在所述第一表面上的热氧化膜; 在形成有用于可动部分的热氧化膜的第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲层; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。

6. 发明申请

US20090249168A1 STORAGE DEVICE 审中-公开
标题翻译：储存设备
公开(公告)号：US20090249168A1
公开(公告)日：2009-10-01
申请号：US12409976
申请日：2009-03-24
申请人： Hiroaki INOUE
发明人： Hiroaki INOUE
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/353 , G11B20/18 , G11B20/1816 , G11B20/1833 , G11B2020/1843
摘要： A storage device includes: a storage medium; an auxiliary memory; and a controller for: determining an error correcting code length corresponding to an error rate of a data write area and/or an error correcting code write area of the storage medium; generating an error correcting code on the basis of the data and the determined error correcting code length; storing the generated error correcting code in the error correcting code write area and storing the data in the data write area; and storing a part of the error correcting code in the auxiliary memory if the generated error correcting code has a greater data length than that of the error correcting code write area, so that the part of the error correcting code overflowed from the error correcting code write area is stored in the auxiliary memory.
摘要翻译：存储装置包括：存储介质; 辅助存储器以及控制器，用于：确定与所述存储介质的数据写入区域和/或纠错码写入区域的错误率相对应的纠错码长度; 根据数据和确定的纠错码长度产生纠错码; 将所生成的纠错码存储在纠错码写入区中并将数据存储在数据写入区中; 并且如果所生成的纠错码的数据长度大于纠错码写入区域的数据长度，则将纠错码的一部分存储在辅助存储器中，从纠错码写入的部分错误校正码溢出区域存储在辅助存储器中。

7. 发明申请

US20100067208A1 Packaged device and method of fabricating packaged-device 有权
标题翻译：包装装置及其制造方法
公开(公告)号：US20100067208A1
公开(公告)日：2010-03-18
申请号：US12458604
申请日：2009-07-16
申请人： Hiroaki INOUE , Takashi KATSUKI , Fumihiko NAKAZAWA
发明人： Hiroaki INOUE , Takashi KATSUKI , Fumihiko NAKAZAWA
IPC分类号： H05K1/14 , H05K3/20
CPC分类号： G01P15/125 , B81C1/00301 , G01C19/5719 , G01P1/023 , G01P15/0802 , H01L21/76898 , H01L23/481 , H01L2924/0002 , Y10T29/49128 , H01L2924/00
摘要： A method includes forming grooves in first regions included in a first wafer to form wiring regions defined by the grooves; forming insulating portions in the grooves; joining a surface of the first wafer on which the wiring regions are formed to a first surface of a device wafer including device forming regions after forming the insulating portions; forming through holes in the wiring regions of the first wafer after joining the first wafer to the device wafer, the holes extending through the first wafer; filling the holes with a conductive material; joining a second wafer to a second surface of the device wafer opposite the first surface, the second wafer including second regions; exposing the wiring regions by thinning the first wafer after joining the first wafer to the device wafer; and cutting the device wafer, the first wafer, and the second wafer after thinning the first wafer.
摘要翻译：一种方法包括在包括在第一晶片中的第一区域中形成凹槽以形成由凹槽限定的布线区域; 在槽中形成绝缘部分; 在形成有所述布线区域的所述第一晶片的表面之后，在形成所述绝缘部分之后，将包括器件形成区域的器件晶片的第一表面接合; 在将所述第一晶片连接到所述器件晶片之后，在所述第一晶片的布线区域中形成通孔，所述孔延伸穿过所述第一晶片; 用导电材料填充孔; 将第二晶片连接到与所述第一表面相对的所述器件晶片的第二表面，所述第二晶片包括第二区域; 在将第一晶片连接到器件晶片之后，通过使第一晶片变薄来暴露布线区域; 以及在使所述第一晶片变薄之后切割所述器件晶片，所述第一晶片和所述第二晶片。

8. 发明申请

US20080124484A1 METHOD OF FORMING RU FILM AND METAL WIRING STRUCTURE 审中-公开
标题翻译：形成RU膜和金属接线结构的方法
公开(公告)号：US20080124484A1
公开(公告)日：2008-05-29
申请号：US11557891
申请日：2006-11-08
申请人： Hiroshi SHINRIKI , Hiroaki INOUE
发明人： Hiroshi SHINRIKI , Hiroaki INOUE
IPC分类号： C23C16/00 , C23C16/513
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/45542 , H01L21/28556 , H01L21/28562 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L2221/1089
摘要： A method of depositing a ruthenium (Ru) thin film on a substrate includes: (i) treating a surface of the substrate with a metal-organic precursor; (ii) adsorbing a ruthenium precursor onto the treated surface of the substrate; (iii) treating the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating steps (ii) and (iii), thereby forming a ruthenium thin film on the substrate.
摘要翻译：在基材上沉积钌（Ru）薄膜的方法包括：（i）用金属 - 有机前体处理基材的表面; （ⅱ）将钌前驱体吸附在基板的处理表面上; （iii）用被激发的还原气体处理吸附的钌前体; 和（iv）重复步骤（ii）和（iii），从而在基材上形成钌薄膜。

9. 发明申请

US20090209101A1 RUTHENIUM ALLOY FILM FOR COPPER INTERCONNECTS 有权
标题翻译：铜合金膜用于铜相互连接
公开(公告)号：US20090209101A1
公开(公告)日：2009-08-20
申请号：US12129345
申请日：2008-05-29
申请人： Hiroshi SHINRIKI , Hiroaki INOUE
发明人： Hiroshi SHINRIKI , Hiroaki INOUE
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/45531 , H01L21/76843 , H01L21/76846 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.
摘要翻译：一种用于形成互连布线的方法，包括：（i）覆盖穿透形成在用于互连布线的基板上的互连电介质层的连接孔的表面，其中底层合金层选自含有钌（Ru ）和至少一个其他金属原子（M），其氮化物膜，其碳化物膜及其碳氮化碳膜，以及（ii）在覆盖有下层的连接孔中填充铜或铜化合物。

10. 发明申请

US20080296165A1 PLATING APPARATUS 审中-公开
标题翻译：电镀设备
公开(公告)号：US20080296165A1
公开(公告)日：2008-12-04
申请号：US12127653
申请日：2008-05-27
申请人： Junji KUNISAWA , Mitsuko ODAGAKI , Natsuki MAKINO , Koji MISHIMA , Kenji NAKAMURA , Hiroaki INOUE , Norio KIMURA , Tetsuo MATSUDA , Hisashi KANEKO , Nobuo HAYASAKA , Katsuya OKUMURA , Manabu TSUJIMURA , Toshiyuki MORITA
发明人： Junji KUNISAWA , Mitsuko ODAGAKI , Natsuki MAKINO , Koji MISHIMA , Kenji NAKAMURA , Hiroaki INOUE , Norio KIMURA , Tetsuo MATSUDA , Hisashi KANEKO , Nobuo HAYASAKA , Katsuya OKUMURA , Manabu TSUJIMURA , Toshiyuki MORITA
IPC分类号： C25D5/02
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。密封材料90接触表面的周缘部分，以水密的方式密封该部分。阴极电极88在与基板接触时通过电流。阴极部38与基板保持部36一体地旋转。电极臂部30在阴极部38的上方，水平且垂直地移动，阳极98面朝下。将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。因此，电镀处理和附带的处理可以通过单个单元进行。

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