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1. 发明授权

US06593164B2 Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same 有权
公开(公告)号：US06593164B2
公开(公告)日：2003-07-15
申请号：US10193210
申请日：2002-07-12
申请人： Hikaru Kobayashi , Hideomi Koinuma
发明人： Hikaru Kobayashi , Hideomi Koinuma
IPC分类号： H01L310288
CPC分类号： H01L31/186 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

2. 发明授权

US06433269B1 Silicon photoelectric conversion device, method of fabricating the same and method of processing the same 有权
标题翻译：硅光电转换装置及其制造方法及其加工方法
公开(公告)号：US06433269B1
公开(公告)日：2002-08-13
申请号：US09691071
申请日：2000-10-19
申请人： Hikaru Kobayashi , Hideomi Koinuma
发明人： Hikaru Kobayashi , Hideomi Koinuma
IPC分类号： H01L310288
CPC分类号： H01L31/186 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.
摘要翻译：在将非晶硅层形成在衬底上之后或在该层已经暴露于光之后，进行将氰离子（CN-）引入到非晶硅层中的氰化工艺。例如，将衬底浸入容器中含有氰化钾（KCN）的水溶液中。氰化工艺消除了沉积的非晶硅薄膜的光电导率降低的因素（例如，弱键，缺陷和复合中心），其可以在沉积膜中被识别。结果，非晶硅层的光电导率从一开始就已经高于通常，并且即使在暴露于光时也几乎不降低。

3. 发明授权

US07150788B2 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate 失效
标题翻译：制造面内晶格常数调整基板和面内晶格常数调整基板的方法
公开(公告)号：US07150788B2
公开(公告)日：2006-12-19
申请号：US10486571
申请日：2002-08-21
申请人： Hideomi Koinuma , Masashi Kawasaki , Tomoteru Fukumura , Kota Terai
发明人： Hideomi Koinuma , Masashi Kawasaki , Tomoteru Fukumura , Kota Terai
IPC分类号： C30B29/16
CPC分类号： C30B25/18 , C30B23/025 , C30B29/32 , C30B33/02
摘要： A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3 (where 0
摘要翻译：提供了调整衬底和面内晶格常数调整衬底的面内晶格常数的方法。在第一预先制备的温度下，用由第一材料制成的第一外延薄膜（2）形成由SrTiO 3 3制成的晶体衬底（1）然后在由第二材料制成的第二外延薄膜（6）上的第一外延薄膜（2）上，例如BaTiO 3 3，例如，含有第一材料的物质和与其一起形成的另一物质的BaxSr 1-x N 2 O 3（其中0

4. 发明申请

US20060057240A1 Masking mechanism for film-forming device 审中-公开
标题翻译：成膜装置的遮蔽机构
公开(公告)号：US20060057240A1
公开(公告)日：2006-03-16
申请号：US10528265
申请日：2003-09-19
申请人： Hideomi Koinuma , Yukio Yamamoto , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yukio Yamamoto , Yuji Matsumoto , Ryota Takahashi
IPC分类号： A01J21/00
CPC分类号： C23C14/044
摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
摘要翻译：它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。

5. 发明授权

US06617539B1 Laser heating apparatus 有权
标题翻译：激光加热装置
公开(公告)号：US06617539B1
公开(公告)日：2003-09-09
申请号：US09786460
申请日：2001-03-05
申请人： Hideomi Koinuma , Masashi Kawasaki
发明人： Hideomi Koinuma , Masashi Kawasaki
IPC分类号： B23K2600
CPC分类号： C23C14/541
摘要： A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.
摘要翻译：公开了一种用于在薄膜制造工艺中加热薄膜形成基板（1）的激光加热装置（20）。将成膜装置（100）的真空室（101）中的基板（1）照射激光，由此被加热到期望的温度。激光通过光纤（23）被引导到基板（1）的区域，并且从光纤（23）的出口端发出的激光束直接或间接地通过反射镜（ 33）放置在基板（1）上。光纤（23）用内套真空抽吸的护套管（24）套管。使用激光使得即使在氧化气氛中甚至是要加热的绝缘基板也可以使用这种布置。

6. 发明授权

US5549780A Method for plasma processing and apparatus for plasma processing 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US5549780A
公开(公告)日：1996-08-27
申请号：US35921
申请日：1993-03-22
申请人： Hideomi Koinuma , Tadashi Shiraishi , Tohru Inoue , Kiyoto Inomata , Shigenori Hayashi , Akiharu Miyanaga , Shunpei Yamazaki
发明人： Hideomi Koinuma , Tadashi Shiraishi , Tohru Inoue , Kiyoto Inomata , Shigenori Hayashi , Akiharu Miyanaga , Shunpei Yamazaki
IPC分类号： B29C47/12 , B29C59/14 , H01J37/32 , H05H1/46 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32009 , B29C47/0009 , B29C59/14 , H01J37/32532 , H05H1/46 , B29K2079/08
摘要： An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an etching treatment on a substrate with the thus-generated plasma, is equipped with a grounded electrode on the surface of the substrate, the grounded electrode serving to prevent electrification or charging of the substrate. A cylindrical insulator is provided between the electrodes so as to be contacted with the outside electrode, and a voltage applied between the central electrode and the cylindrical insulator is heightened by reducing the thickness of the cylindrical insulator or increasing the dielectric constant of the cylindrical insulator, so that low-temperature plasma is generated under atmospheric pressure using argon mainly-contained gas in a reaction space. Further, in a plasma generating apparatus for generating plasma with a pair of parallel electrodes, an insulator having high dielectric constant is provided in close contact with one of the electrodes, and gas mainly containing rare gas such as helium, argon or the like is supplied into the discharge space between the pair of parallel electrodes while the flow amount of the gas is controlled by a flow-amount controller, thereby inducing the gas to plasma under atmospheric pressure, and generating a sheet-shaped plasma.
摘要翻译：使用施加在同心布置的电极之间的高频能量的添加有卤素元素的氦气主要含有气体的等离子体等离子体的设备，用这样产生的等离子体对衬底进行蚀刻处理，配备有接地电极衬底的表面，接地电极用于防止衬底的起电或充电。在电极之间设置圆柱形绝缘体以与外部电极接触，并且通过减小圆柱形绝缘体的厚度或提高圆柱形绝缘体的介电常数来提高施加在中心电极和圆柱形绝缘体之间的电压，使得在大气压下使用氩气主要含有的气体在反应空间中产生低温等离子体。此外，在用一对平行电极产生等离子体的等离子体生成装置中，提供具有高介电常数的绝缘体，与其中一个电极紧密接触，并且主要包含诸如氦，氩等的稀有气体的气体被供应进入一对平行电极之间的放电空间，同时通过流量控制器控制气体的流量，从而在大气压下使气体进入等离子体，并产生片状等离子体。

7. 发明授权

US5155094A Tunneling Josephson element with a blocking layer inert to oxygen 失效
标题翻译：隧道JOSEPHSON元件与阻塞层注入氧气
公开(公告)号：US5155094A
公开(公告)日：1992-10-13
申请号：US174760
申请日：1988-03-29
申请人： Yoichi Okabe , Atsuki Inoue , Hideomi Koinuma
发明人： Yoichi Okabe , Atsuki Inoue , Hideomi Koinuma
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/225 , Y10S505/70 , Y10S505/701 , Y10S505/702 , Y10S505/78
摘要： A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.

8. 发明授权

US08377211B2 Device for vacuum processing 失效
标题翻译：真空处理设备
公开(公告)号：US08377211B2
公开(公告)日：2013-02-19
申请号：US12309533
申请日：2007-02-01
申请人： Masatomo Sumiya , Mikk Lippmaa , Tsuyoshi Ohnishi , Eiji Fujimoto , Hideomi Koinuma
发明人： Masatomo Sumiya , Mikk Lippmaa , Tsuyoshi Ohnishi , Eiji Fujimoto , Hideomi Koinuma
IPC分类号： C23C16/00
CPC分类号： C23C16/481
摘要： Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.
摘要翻译：公开了一种真空处理装置，其在真空室内被加热的基板上进行气相沉积; 所述装置，其中所述室具有形成在所述室的一部分中的透光窗; 光透射窗和保持基板的保持部通过与室内的其他部分分离的直线空间连接; 激光发射器安装在透光窗外; 并且激光发射器通过线性空间向基板发射激光束，从而加热基板。该装置能够激光加热，消除诸如激光输出减少的常规缺点。

9. 发明申请

US20120067410A1 SCHOTTKY-BARRIER JUNCTION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME 审中-公开
标题翻译：肖特基阻挡元件和光电转换元件及其使用的太阳能电池
公开(公告)号：US20120067410A1
公开(公告)日：2012-03-22
申请号：US13258205
申请日：2010-03-29
申请人： Nobuyuki Matsuki , Yoshihiro Irokawa , Kenji Itaka , Hideomi Koinuma , Masatomo Sumiya
发明人： Nobuyuki Matsuki , Yoshihiro Irokawa , Kenji Itaka , Hideomi Koinuma , Masatomo Sumiya
IPC分类号： H01L31/07 , H01L29/161 , H01L29/47 , H01L29/20
CPC分类号： H01L51/4213 , Y02E10/549
摘要： A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.
摘要翻译：肖特基势垒接合元件1在有机半导体3和有机导体4之间具有肖特基势垒结。无机半导体3是氮化物半导体，Si，GaAs，CdS，CdTe，CuInGaSe，InSb，PbTe，PbS ，Ge，InN，GaSb和SiC。太阳能电池使用该肖特基势垒接合元件1，其光电转换部分包括肖特基结。光电转换元件使用该肖特基势垒结元件1，其转换部分用于包括肖特基结的光和电相互转换。

10. 发明授权

US06459763B1 Combinatorial X-ray diffractor 有权
$Combinatorial X-ray diffractor$
标题翻译：组合X射线衍射仪
公开(公告)号：US06459763B1
公开(公告)日：2002-10-01
申请号：US09744304
申请日：2001-03-26
申请人： Hideomi Koinuma , Masashi Kawasaki , Kazuhiko Omote , Tetsuo Kikuchi
发明人： Hideomi Koinuma , Masashi Kawasaki , Kazuhiko Omote , Tetsuo Kikuchi
IPC分类号： G01N2320
CPC分类号： G01N23/207 , B01J2219/00527 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00659 , B01J2219/00689 , B01J2219/00707 , B01J2219/00756
摘要： A combinatorial X-ray diffractor, particularly a combinatorial X-ray diffractor which can measure one row of samples among a plurality of samples arranged into a matrix simultaneously by X-ray diffraction. For the purpose of high throughput screening, a plurality of samples (10) are arranged into a row X1, a row X2, a row X3, and a row X4 on a sample stage and samples in each row are measured simultaneously by X-ray diffraction, measured data are processed by an information processor (20), information data useful for the evaluation of thin film material are automatically extracted and arranged and the extracted and arranged information data are displayed on a display apparatus (27).
摘要翻译：组合X射线衍射器，特别是组合X射线衍射器，其可以通过X射线衍射同时测量排列成矩阵的多个样本中的一行样本。为了高通量筛选的目的，将多个样品（10）排列在样品台上的行X1，行X2，行X3和行X4中，并且通过X射线同时测量每行中的样品衍射，测量数据由信息处理器（20）处理，自动提取和布置用于评估薄膜材料的信息数据，并将提取和排列的信息数据显示在显示装置（27）上。

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