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    • 3. 发明申请
    • Method and apparatus for determining an etch property using an endpoint signal
    • 使用端点信号确定蚀刻性质的方法和装置
    • US20060048891A1
    • 2006-03-09
    • US10531469
    • 2003-10-31
    • Hongyu YueHieu Lam
    • Hongyu YueHieu Lam
    • C23F1/00G01L21/30
    • H01J37/32935H01J37/32963
    • The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
    • 本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统,包括处理室,耦合到处理室并被配置为测量至少一个端点信号的诊断系统,以及耦合到诊断系统的控制器,并且被配置为确定 从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。 此外,提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法,包括以下步骤:提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号,其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。
    • 6. 发明申请
    • Controlling a material processing tool and performance data
    • 控制材料加工工具和性能数据
    • US20050234574A1
    • 2005-10-20
    • US10512863
    • 2003-06-27
    • Hieu LamHongyu Yue
    • Hieu LamHongyu Yue
    • H01L21/3065G05B19/418G06F19/00H01L21/205
    • G05B19/41865G05B2219/31443G05B2219/32366G05B2219/45031Y02P90/20Y02P90/26
    • According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control. The process controller (130) is coupled to the process recipe correction filter (120) and is configured to update a process recipe according to the process recipe correction.
    • 根据本发明的实施例,一种包括处理工具(10)和过程执行控制系统(100)的材料处理系统(1)。 过程性能控制系统(100)包括耦合到处理工具(10)的过程性能控制器(55),其中过程性能控制器(55)包括过程性能预测模型(110),过程配方校正过滤器(120) ),过程控制器(130)和过程执行模型校正算法(150)。 过程性能预测模型(110)被配置为从耦合到过程工具(10)的多个传感器接收工具数据并预测过程性能数据。 过程配方校正滤波器(120)耦合到过程性能预测模型(110)并且被配置为接收预测的过程性能数据并且生成用于运行过程控制的过程配方校正。 过程控制器(130)耦合到过程配方校正过滤器(120),并被配置为根据处理配方校正更新过程配方。