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1. 发明申请

US20050189565A1 Bipolar transistor and method of manufacturing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US20050189565A1
公开(公告)日：2005-09-01
申请号：US11053548
申请日：2005-02-09
申请人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
发明人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
IPC分类号： H01L21/331 , H01L29/10 , H01L29/22 , H01L29/267 , H01L29/737
CPC分类号： H01L29/267 , H01L29/1004 , H01L29/7371
摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.
摘要翻译：提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层，形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

2. 发明授权

US07157749B2 Bipolar transistor with a GaAs substrate and a SiGe base or collector 失效
标题翻译：具有GaAs衬底和SiGe基极或集电极的双极晶体管
公开(公告)号：US07157749B2
公开(公告)日：2007-01-02
申请号：US11053548
申请日：2005-02-09
申请人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
发明人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/267 , H01L29/1004 , H01L29/7371
摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.
摘要翻译：提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层，形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

3. 发明申请

US20120038411A1 HIGH-FREQUENCY SWITCH 有权
标题翻译：高频开关
公开(公告)号：US20120038411A1
公开(公告)日：2012-02-16
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

4. 发明申请

US20060082408A1 Semiconductor switching circuit 失效
公开(公告)号：US20060082408A1
公开(公告)日：2006-04-20
申请号：US11142455
申请日：2005-06-02
申请人： Toshiki Seshita , Yoshitomo Sagae
发明人： Toshiki Seshita , Yoshitomo Sagae
IPC分类号： H03K17/687
CPC分类号： H03K17/6871 , H03K17/693
摘要： According to the present invention, there is provided a semiconductor switching circuit having: a common terminal; first, second, and third terminals; first, second, and third ground terminals; first, second, and third control terminals; a first through FET having a source and drain connected in series between the common terminal and first terminal, and a gate connected to the first control terminal via a first resistor; a second through FET having a source and drain connected in series between the common terminal and second terminal, and a gate connected to the second control terminal via a second resistor; a third through FET having a source and drain connected in series between the common terminal and third terminal, and a gate connected to the third control terminal via a third resistor; 11th and 12th shunt FETs each having a source and drain connected in parallel between the first terminal and first ground terminal; 21st and 22nd shunt FETs each having a source and drain connected in parallel between the second terminal and second ground terminal; and 31st and 32nd shunt FETs each having a source and drain connected in parallel between the third terminal and third ground terminal, wherein gates of the 11th and 22nd shunt FETs are connected to the third control terminal via 11th and 22nd resistors, respectively, gates of the 21st and 31st shunt FETs are connected to the first control terminal via 21st and 31st resistors, respectively, gates of the 12th and 32nd shunt FETs are connected to the second control terminal via 12th and 32nd resistors, respectively, and when a first electric potential is supplied only to a Jth (J is a natural number of 1 to 3) control terminal, and a second electric potential lower than the first electric potential is supplied to the rest of said control terminals, the common terminal and a Jth terminal are electrically connected, and the first to third terminals except for said Jth terminal and said common terminal are electrically disconnected.

5. 发明申请

US20050093026A1 Semiconductor device, communication device, and semiconductor device inspecting method 失效
标题翻译：半导体器件，通信器件和半导体器件检查方法
公开(公告)号：US20050093026A1
公开(公告)日：2005-05-05
申请号：US10942849
申请日：2004-09-17
申请人： Yoshitomo Sagae , Toshiki Seshita
发明人： Yoshitomo Sagae , Toshiki Seshita
IPC分类号： H01P1/15 , H03K17/693 , H01L29/745
CPC分类号： H01P1/15 , H03K17/693 , Y10T29/49004
摘要： A semiconductor device comprises a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode, bias voltages at the first and second electrodes being substantially equal; and an inductor element and a capacitor element which are connected in parallel with respect to the semiconductor switching element at the first and second electrodes and are connected in series to each other.
摘要翻译：半导体器件包括具有第一电极，第二电极和第三电极的半导体开关元件，并且根据第三电极的电位，允许高频信号在第一电极和第二电极之间通过，偏置第一和第二电极处的电压基本相等; 以及电感器元件和电容器元件，其在第一和第二电极处相对于半导体开关元件并联连接并且彼此串联连接。

6. 发明授权

US08923781B2 Semiconductor switch and wireless device 有权
标题翻译：半导体开关和无线设备
公开(公告)号：US08923781B2
公开(公告)日：2014-12-30
申请号：US12952762
申请日：2010-11-23
申请人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
发明人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
IPC分类号： H04B1/44 , H03K17/00 , H03K17/691 , H03K3/354 , H03K17/687
CPC分类号： H03K17/6871 , H03K3/354 , H03K17/005 , H03K17/691
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an antenna terminal and any one of high frequency terminals based on the output of the driver.
摘要翻译：根据一个实施例，半导体开关包括电压发生器，电压控制器，驱动器和开关单元。电压发生器产生负第一电位。电压控制器根据从外部输入的端子开关信号来控制第一电位。驱动器输入端子开关信号，并且基于端子开关信号输出从第一电位和第二电位中选择的至少一个。第二个电位是电源电压或高于电源电压。开关单元设置在SOT基板上，基于驱动器的输出，切换天线端子与高频端子中的任一个之间的连接。

7. 发明授权

US08698574B2 High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：US08698574B2
公开(公告)日：2014-04-15
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

8. 发明申请

US20110159822A1 SEMICONDUCTOR SWITCH AND WIRELESS DEVICE 有权
标题翻译：半导体开关和无线设备
公开(公告)号：US20110159822A1
公开(公告)日：2011-06-30
申请号：US12952762
申请日：2010-11-23
申请人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
发明人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
IPC分类号： H04B1/44 , H03K17/00
CPC分类号： H03K17/6871 , H03K3/354 , H03K17/005 , H03K17/691
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an anntena terminal and any one of high frequency terminals based on the output of the driver.
摘要翻译：根据一个实施例，半导体开关包括电压发生器，电压控制器，驱动器和开关单元。电压发生器产生负第一电位。电压控制器根据从外部输入的端子开关信号来控制第一电位。驱动器输入端子开关信号，并且基于端子开关信号输出从第一电位和第二电位中选择的至少一个。第二个电位是电源电压或高于电源电压。开关单元设置在SOT基板上，基于驱动器的输出，切换在内部端子和任何一个高频端子之间的连接。

9. 发明申请

US20090181630A1 RADIO FREQUENCY SWITCH CIRCUIT 审中-公开
标题翻译：无线电频率开关电路
公开(公告)号：US20090181630A1
公开(公告)日：2009-07-16
申请号：US12354185
申请日：2009-01-15
申请人： Toshiki Seshita , Yoshitomo Sagae
发明人： Toshiki Seshita , Yoshitomo Sagae
IPC分类号： H04B1/18
CPC分类号： H04B1/006 , H03K17/693 , H04B1/48
摘要： A radio frequency switch circuit includes: an antenna terminal; a first and second RF terminal; a first through transistor placed between the antenna terminal and the first RF terminal; a second through transistor placed between the antenna terminal and the second RF terminal; a first shunt transistor placed between ground and the first RF terminal; a second shunt transistor placed between the ground and the second RF terminal; and a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction. Electrical connection between the antenna terminal and the first and second RF terminal is switchable.
摘要翻译：射频切换电路包括：天线端子; 第一和第二RF终端; 放置在天线端子和第一RF端子之间的第一通晶体管; 位于天线端子和第二RF端子之间的第二通过晶体管; 放置在地和第一RF端之间的第一并联晶体管; 放置在地和第二RF端之间的第二分流晶体管; 以及包括反向并联MOS电容器的失真补偿电路，所述反并联MOS电容器的电容约为0伏特，其电压依赖性正向负方向凸起，所述失真补偿电路可用于补偿第一和第二电压的0伏附近的关断电容的电压依赖性，第二通过晶体管和对正方向凸起的第一和第二分流晶体管。天线端子与第一和第二RF端子之间的电气连接是可切换的。

10. 发明授权

US07468543B2 Semiconductor device, communication device, and semiconductor device inspecting method 失效
标题翻译：半导体器件，通信器件和半导体器件检查方法
公开(公告)号：US07468543B2
公开(公告)日：2008-12-23
申请号：US10942849
申请日：2004-09-17
申请人： Yoshitomo Sagae , Toshiki Seshita
发明人： Yoshitomo Sagae , Toshiki Seshita
IPC分类号： H01L27/24
CPC分类号： H01P1/15 , H03K17/693 , Y10T29/49004
摘要： A semiconductor device comprises a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode, bias voltages at the first and second electrodes being substantially equal; and an inductor element and a capacitor element which are connected in parallel with respect to the semiconductor switching element at the first and second electrodes and are connected in series to each other.
摘要翻译：半导体器件包括具有第一电极，第二电极和第三电极的半导体开关元件，并且根据第三电极的电位，允许高频信号在第一电极和第二电极之间通过，偏置第一和第二电极处的电压基本相等; 以及电感器元件和电容器元件，其在第一和第二电极处相对于半导体开关元件并联连接并且彼此串联连接。

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