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    • 2. 发明授权
    • Piezoelectric thin-film resonator and method for producing the same
    • 压电薄膜谐振器及其制造方法
    • US07436102B2
    • 2008-10-14
    • US11270259
    • 2005-11-10
    • Hidetoshi FujiiRyuichi Kubo
    • Hidetoshi FujiiRyuichi Kubo
    • H01L41/08
    • H03H3/02H03H9/173Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.
    • 一种压电薄膜谐振器的制造方法,其特征在于,在基板上形成牺牲层,对牺牲层进行等离子体处理,使牺牲层的端面部的表面粗糙度(Ra)为5nm以下, 形成带状电介质膜,以连续地设置在基板的表面和牺牲层的端面部分和主表面上,形成包括下电极,上电极和 设置在其间的压电薄膜,使得下电极的一部分和上电极的一部分在电介质膜上的区域彼此面对,该区域设置在牺牲层的上部,并且去除牺牲层 以在衬底和电介质膜之间形成气隙。
    • 6. 发明申请
    • Piezoelectric thin-film resonator and method for producing the same
    • 压电薄膜谐振器及其制造方法
    • US20060097823A1
    • 2006-05-11
    • US11270259
    • 2005-11-10
    • Hidetoshi FujiiRyuichi Kubo
    • Hidetoshi FujiiRyuichi Kubo
    • H03H9/00
    • H03H3/02H03H9/173Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.
    • 一种压电薄膜谐振器的制造方法,其特征在于,在基板上形成牺牲层,对牺牲层进行等离子体处理,使牺牲层的端面部的表面粗糙度(Ra)为5nm以下, 形成带状电介质膜,以连续地设置在基板的表面和牺牲层的端面部分和主表面上,形成包括下电极,上电极和 设置在其间的压电薄膜,使得下电极的一部分和上电极的一部分在电介质膜上的区域彼此面对,该区域设置在牺牲层的上部,并且去除牺牲层 以在衬底和电介质膜之间形成气隙。
    • 9. 发明授权
    • Piezoelectric thin film resonator
    • 压电薄膜谐振器
    • US07327209B2
    • 2008-02-05
    • US11715359
    • 2007-03-08
    • Hidetoshi FujiiRyuichi KuboHajime Yamada
    • Hidetoshi FujiiRyuichi KuboHajime Yamada
    • H03H9/15H03H9/54H03H9/70
    • H03H9/173H03H9/02133
    • A piezoelectric thin film resonator that ensures the strength of a membrane without degrading the resonant properties and which can be easily handled in mounting. The piezoelectric thin film resonator has a substrate, a thin film member, and reinforcing films. The thin film member has at least two support portions supported by the substrate and a floating portion disposed over the substrate with a space provided therebetween and supported by the support portions. The floating portion includes a pair of excitation electrodes facing each other and a piezoelectric thin film provided therebetween. The reinforcing films are formed in the vicinities of the boundaries between the floating portion and the support portions of the thin film member.
    • 一种压电薄膜谐振器,其确保膜的强度而不降低谐振特性,并且可以在安装时容易地处理。 压电薄膜谐振器具有基板,薄膜构件和增强膜。 薄膜构件具有由基板支撑的至少两个支撑部分和设置在基板上方的浮动部分,其间设置有由该支撑部分支撑的空间。 浮动部包括彼此面对的一对激励电极和设置在它们之间的压电薄膜。 增强膜形成在浮动部分和薄膜构件的支撑部分之间的边界附近。
    • 10. 发明申请
    • Piezoelectric thin film resonator
    • 压电薄膜谐振器
    • US20070152775A1
    • 2007-07-05
    • US11715359
    • 2007-03-08
    • Hidetoshi FujiiRyuichi KuboHajime Yamada
    • Hidetoshi FujiiRyuichi KuboHajime Yamada
    • H03H9/70H03H9/54H03H9/58
    • H03H9/173H03H9/02133
    • A piezoelectric thin film resonator that ensures the strength of a membrane without degrading the resonant properties and which can be easily handled in mounting. The piezoelectric thin film resonator has a substrate, a thin film member, and reinforcing films. The thin film member has at least two support portions supported by the substrate and a floating portion disposed over the substrate with a space provided therebetween and supported by the support portions. The floating portion includes a pair of excitation electrodes facing each other and a piezoelectric thin film provided therebetween. The reinforcing films are formed in the vicinities of the boundaries between the floating portion and the support portions of the thin film member.
    • 一种压电薄膜谐振器,其确保膜的强度而不降低谐振特性,并且可以在安装时容易地处理。 压电薄膜谐振器具有基板,薄膜构件和增强膜。 薄膜构件具有由基板支撑的至少两个支撑部分和设置在基板上方的浮动部分,其间设置有由该支撑部分支撑的空间。 浮动部包括彼此面对的一对激励电极和设置在它们之间的压电薄膜。 增强膜形成在浮动部分和薄膜构件的支撑部分之间的边界附近。