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1. 发明授权

US06815725B2 Semiconductor light emitting device having a fluorescent material emitting light of a secondary wavelength 失效
标题翻译：具有发射二次波长的光的荧光体的半导体发光器件
公开(公告)号：US06815725B2
公开(公告)日：2004-11-09
申请号：US10417481
申请日：2003-04-17
申请人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
发明人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.
摘要翻译：提供了一种半导体发光器件，其中每个器件中的色调变化小，并且由于随着年龄而劣化的色调变化也小，并且其制造方法。半导体发光器件包括用于通过电流注入发射具有第一波长的初级光的有源层和由初级光激发的用于发射具有不同于第一波长的第二波长的二次光的发光层，其中初级光和将二次光混合输出。

2. 发明申请

US20050040427A1 Semiconductor light emitting device and method for manufacturing same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050040427A1
公开(公告)日：2005-02-24
申请号：US10956173
申请日：2004-09-30
申请人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
发明人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
IPC分类号： H01L33/00 , H01L33/30 , H01L33/32 , H01L33/50 , H01L21/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.
摘要翻译：提供了一种半导体发光器件，其中每个器件中的色调变化小，并且由于随着年龄而劣化的色调变化也小，并且其制造方法。半导体发光器件包括用于通过电流注入发射具有第一波长的初级光的有源层和由初级光激发的用于发射具有不同于第一波长的第二波长的二次光的发光层，其中初级光和将二次光混合输出。

3. 发明授权

US07141445B2 Semiconductor light emitting device and method for manufacturing same 失效
公开(公告)号：US07141445B2
公开(公告)日：2006-11-28
申请号：US10956173
申请日：2004-09-30
申请人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
发明人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
IPC分类号： H01L21/328 , H01L21/329
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

4. 发明授权

US06576933B2 Semiconductor light emitting device and method for manufacturing same 失效
公开(公告)号：US06576933B2
公开(公告)日：2003-06-10
申请号：US09803457
申请日：2001-03-09
申请人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
发明人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
IPC分类号： H01L2978
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

5. 发明授权

US08618562B2 Light emitting device and method for manufacturing same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08618562B2
公开(公告)日：2013-12-31
申请号：US12563562
申请日：2009-09-21
申请人： Yasuo Idei
发明人： Yasuo Idei
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L24/06 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L2224/05617 , H01L2224/05644 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/01032 , H01L2924/0105
摘要： A light emitting device includes: a multilayer body including a light emitting layer made of a semiconductor; a first bonding metal layer attached to the multilayer body; a substrate; and a second bonding metal layer attached to the substrate and bonded to the first bonding metal layer at a bonding interface, at least one of a planar size of the first bonding metal layer on the bonding interface side and a planar size of the second bonding metal layer on the bonding interface side being smaller than a planar size of the substrate.
摘要翻译：发光器件包括：包括由半导体制成的发光层的多层体; 附着在所述多层体上的第一接合金属层; 底物; 以及第二接合金属层，其附接到所述基板并且在接合界面处与所述第一接合金属层接合，所述接合界面侧上的所述第一接合金属层的平面尺寸和所述第二接合金属的平面尺寸中的至少一个接合界面侧的层小于衬底的平面尺寸。

6. 发明申请

US20100289046A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100289046A1
公开(公告)日：2010-11-18
申请号：US12563562
申请日：2009-09-21
申请人： Yasuo Idei
发明人： Yasuo Idei
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/40 , H01L24/06 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L2224/05617 , H01L2224/05644 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/01032 , H01L2924/0105
摘要： A light emitting device includes: a multilayer body including a light emitting layer made of a semiconductor; a first bonding metal layer attached to the multilayer body; a substrate; and a second bonding metal layer attached to the substrate and bonded to the first bonding metal layer at a bonding interface, at least one of a planar size of the first bonding metal layer on the bonding interface side and a planar size of the second bonding metal layer on the bonding interface side being smaller than a planar size of the substrate.
摘要翻译：发光器件包括：包括由半导体制成的发光层的多层体; 附着在所述多层体上的第一接合金属层; 底物; 以及第二接合金属层，其附接到所述基板并且在接合界面处接合到所述第一接合金属层，所述接合界面侧上的所述第一接合金属层的平面尺寸和所述第二接合金属的平面尺寸中的至少一个接合界面侧的层小于衬底的平面尺寸。

7. 发明授权

US5386139A Semiconductor light emitting element with improved structure of groove therein 失效
标题翻译：具有改善沟槽结构的半导体发光元件
公开(公告)号：US5386139A
公开(公告)日：1995-01-31
申请号：US46973
申请日：1993-04-15
申请人： Yasuo Idei , Toshio Shimizu
发明人： Yasuo Idei , Toshio Shimizu
IPC分类号： H01L27/15 , H01L33/00 , H01S5/42 , H01L27/14 , H01L31/00 , H01S3/19
CPC分类号： H01L33/0025 , H01L27/15
摘要： A semiconductor light emitting element in which light leakage from the vicinity of an active layer end thereof is significantly reduced, and an interval at which the element is disposed is sufficiently narrow, so that there can be realized an optimal distance-measuring accuracy when used for a light source of a camera's automatic focusing mechanism. The semiconductor light emitting element includes a double heterojunction structure such that a GaAlAs current restriction layer formed with a conductive region is formed on a GaAs semiconductor substrate and a light emitting region of the light emitting element diode is provided therein by forming a p-n junction surfaces, the semiconductor light emitting element being characterized in that a plurality of the light emitting diodes are electrically isolated from each other by a plurality of grooves formed substantially vertical to the p-n junction and an end face of the light emitting region cut through by the groove is disposed inside a vertical line drawn from an end face of the surface of the light emitting element.
摘要翻译：从其有源层端部附近的漏光明显减少的半导体发光元件，设置元件的间隔足够窄，可以实现最佳距离测量精度照相机的自动对焦机构的光源。半导体发光元件包括双异质结结构，使得形成有导电区域的GaAlAs电流限制层形成在GaAs半导体衬底上，并且通过形成pn结表面在其中提供发光元件二极管的发光区域，所述半导体发光元件的特征在于，多个所述发光二极管通过与所述pn结大致垂直而形成的多个槽电隔离，并且设置由所述槽切断的所述发光区域的端面在从发光元件的表面的端面表示的垂直线的内侧。

8. 发明申请

US20090224269A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME, AND EPITAXIAL WAFER 有权
标题翻译：半导体发光器件及其制造方法和外延波形
公开(公告)号：US20090224269A1
公开(公告)日：2009-09-10
申请号：US12391283
申请日：2009-02-24
申请人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
发明人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
IPC分类号： H01L33/00 , H01L21/20 , H01L29/20
CPC分类号： H01L33/0079
摘要： A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.
摘要翻译：一种半导体发光器件包括：包含发光层的上部生长层; 来自发光层的辐射光通过的透明基板; 以及设置在上部生长层和透明基板之间的基底层，基底层具有表面控制层和与透明基板结合的结合层。表面控制层由至少包括Ga和As的化合物半导体制成。上部生长层形成在表面控制层的上表面上。在表面控制层和上部生长层之间的界面处的晶格常数差小于接合层和透明基板之间的界面处的晶格常数差。

9. 发明授权

US5744828A Semiconductor light emitting device with blocking layer 失效
标题翻译：具有阻挡层的半导体发光器件
公开(公告)号：US5744828A
公开(公告)日：1998-04-28
申请号：US678626
申请日：1996-07-10
申请人： Hideki Nozaki , Kazumi Unno , Yasuo Idei , Katsuhiko Nishitani
发明人： Hideki Nozaki , Kazumi Unno , Yasuo Idei , Katsuhiko Nishitani
IPC分类号： H01L33/10 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/36 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L33/38 , H01L33/14 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L33/10
摘要： A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.
摘要翻译：半导体发光器件具有半导体衬底（1）。在基板的第一主平面上形成发光层。在发射层上的预定区域中，形成电流阻挡层（10）。在电流阻挡层上形成激励电极（20）。在基板的第二主平面上形成基板电极（9）。励磁电极由接合焊盘（21）和电流供给电极（22）构成。电流阻挡层位于接合焊盘下面。电流阻挡层防止电流在接合焊盘下流动。电流供应电极提高了器件的发光效率。

10. 发明授权

US08299480B2 Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer 有权
标题翻译：半导体发光器件及其制造方法以及外延晶片
公开(公告)号：US08299480B2
公开(公告)日：2012-10-30
申请号：US12391283
申请日：2009-02-24
申请人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
发明人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.
摘要翻译：一种半导体发光器件包括：包含发光层的上部生长层; 来自发光层的辐射光通过的透明基板; 以及设置在上部生长层和透明基板之间的基底层，基底层具有表面控制层和与透明基板结合的结合层。表面控制层由至少包括Ga和As的化合物半导体制成。上部生长层形成在表面控制层的上表面上。在表面控制层和上部生长层之间的界面处的晶格常数差小于接合层和透明基板之间的界面处的晶格常数差。

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