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1. 发明授权

US08267102B2 Washing tube and endoscope washing and disinfecting apparatus 有权
标题翻译：洗涤管和内窥镜清洗消毒装置
公开(公告)号：US08267102B2
公开(公告)日：2012-09-18
申请号：US12355036
申请日：2009-01-16
申请人： Hideto Onishi , Eiri Suzuki , Masahiko Tomita , Toshiaki Noguchi , Ryuta Sewake , Hitoshi Hasegawa
发明人： Hideto Onishi , Eiri Suzuki , Masahiko Tomita , Toshiaki Noguchi , Ryuta Sewake , Hitoshi Hasegawa
IPC分类号： B08B9/032
CPC分类号： B08B9/0325 , A61B1/125 , A61B90/70 , A61B2090/701 , B08B9/032 , F16L37/127 , F16L37/42
摘要： A washing tube of the present invention is a washing tube for supplying a washing and disinfecting fluid to an endoscope conduit of an endoscope placed in an endoscope washing and disinfecting apparatus, includes: a tube body, one end of which is connected to fluid supply sections of the endoscope washing and disinfecting apparatus for sending a fluid, a connector section disposed at the other end of the tube body and loosely and detachably fitted to a base of the endoscope conduit, a sealing member that is provided inside the connector section and comes into close contact with the base to keep the base and the connector section connected in a watertight manner, a valve body that moves forward by a liquid sending pressure of the supplied fluid and a biasing member provided inside the connector section for biasing the valve body backward.
摘要翻译：本发明的洗涤管是用于向内窥镜清洗消毒装置内窥镜的内窥镜导管供给洗涤消毒液的清洗管，其特征在于，包括：管体，其一端与流体供给部用于发送流体的内窥镜清洗消毒装置，设置在管体另一端的连接器部分，并且松散地并且可拆卸地装配到内窥镜导管的基部;密封部件，设置在连接器部分的内部并进入与基座紧密接触以保持底座和连接器部分以水密的方式连接;阀体，其通过所供应的流体的送液压力向前移动;以及偏置构件，设置在连接器部分内部，用于向后偏压阀体。

2. 发明授权

US08176771B2 Endoscope washing and disinfecting apparatus and leak detection method performed by the apparatus 有权
标题翻译：由该装置进行的内窥镜清洗消毒装置及泄漏检测方法
公开(公告)号：US08176771B2
公开(公告)日：2012-05-15
申请号：US12266890
申请日：2008-11-07
申请人： Hideto Onishi , Kenichi Kobayashi , Keisuke Nozaki , Shintaro Suzuki , Naoya Taya , Masahiko Tomita , Toshiaki Noguchi , Eiri Suzuki
发明人： Hideto Onishi , Kenichi Kobayashi , Keisuke Nozaki , Shintaro Suzuki , Naoya Taya , Masahiko Tomita , Toshiaki Noguchi , Eiri Suzuki
IPC分类号： G01M3/06 , A61L2/18
CPC分类号： A61L2/24 , A61B1/00057 , A61B1/123 , A61B1/125 , A61B90/70 , A61B2090/064 , A61B2090/701 , A61L2/18 , G01M3/2846
摘要： An endoscope washing and disinfecting apparatus includes: a connecting portion connected to a bending transmitting portion of an endoscope to transmit driving force; a distal end driving portion for transmitting the driving force to the bending transmitting portion through the connecting portion; a fluid supplying unit for supplying gas into an inner space of the endoscope; and a control unit for controlling a pressure detecting portion for detecting pressure in the inner space and the distal end driving portion to provide the bending portion with bending motion, and for determining occurrence or nonoccurrence of water leak in the endoscope by comparing the pressure detected by the pressure detecting portion and a preset threshold.
摘要翻译：内窥镜清洗消毒装置包括：连接部，连接到内窥镜的弯曲传递部，传递驱动力; 远端驱动部，其通过连接部将驱动力传递到弯曲传递部; 流体供应单元，用于将气体供应到所述内窥镜的内部空间中; 以及控制单元，用于控制用于检测内部空间和远端驱动部分中的压力的压力检测部分，以向弯曲部分提供弯曲运动，并且通过比较由内窥镜检测到的压力来确定内窥镜中的漏水的发生或不发生压力检测部分和预设阈值。

3. 发明授权

US08715425B2 Endoscope cleaning/disinfecting apparatus and endoscope cleaning/disinfecting method 有权
标题翻译：内窥镜清洗/消毒装置及内窥镜清洗/消毒方法
公开(公告)号：US08715425B2
公开(公告)日：2014-05-06
申请号：US12771360
申请日：2010-04-30
申请人： Ryuta Sewake , Eiri Suzuki , Masahiko Tomita , Shinichiro Kawachi , Naoya Taya
发明人： Ryuta Sewake , Eiri Suzuki , Masahiko Tomita , Shinichiro Kawachi , Naoya Taya
IPC分类号： B08B9/00 , B08B9/027 , A61L2/00
CPC分类号： A61L2/18 , A61B1/123 , A61B90/70 , A61B2090/701 , A61L2202/17
摘要： An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.
摘要翻译：使用本发明的稀释罐中用热水稀释化学品而得到的稀释化学品在清洗槽内处理内窥镜的内窥镜清洗/消毒装置在加工前将热水引入清洗槽，引入热水在引入清洗槽的热水温度落在规定的温度范围内后，进入稀释槽，产生稀释的化学品，将稀释的化学品引入清洗槽并处理内窥镜。

4. 发明申请

US20070226927A1 Endoscope washing and disinfecting apparatus and endoscope conduit washing brush cassette 审中-公开
标题翻译：内窥镜清洗消毒装置和内窥镜导管清洗刷盒
公开(公告)号：US20070226927A1
公开(公告)日：2007-10-04
申请号：US11705732
申请日：2007-02-13
申请人： Eiri Suzuki , Toshiaki Noguchi , Kenichi Kobayashi , Masahiko Tomita
发明人： Eiri Suzuki , Toshiaki Noguchi , Kenichi Kobayashi , Masahiko Tomita
IPC分类号： B08B9/04
CPC分类号： A61L2/18 , A61B1/122 , A61B1/123 , A61B90/70 , A61B2090/701 , A61L2202/17 , A61L2202/24
摘要： An endoscope washing and disinfecting apparatus according to the present invention includes an apparatus body having a washing tub for placing and washing an endoscope, a brush forward and reverse mechanism provided with a fluid supply part for supplying a fluid circulating in the apparatus body into a conduit of the endoscope, and a washing brush cassette freely attachable and detachable to/from the brush forward and reverse mechanism, having a washing brush for brush washing the inside of the conduit by moving forward and reversely by the brush forward and reverse mechanism through the fluid supply part. Thus, an inexpensive endoscope conduit washing brush cassette capable of readily changing a washing brush and an easy-to-use endoscope washing and disinfecting apparatus corresponding to the endoscope conduit washing brush cassette can be provided.
摘要翻译：根据本发明的内窥镜清洗消毒装置包括具有用于放置和洗涤内窥镜的洗涤桶的装置主体，设置有用于将在装置本体中循环的流体供应到管道中的流体供给部的刷子前后反向机构以及可自由地安装和拆卸的刷子前后反转机构的洗刷刷盒，其具有用于通过刷子前后反向机构通过流体向前和向后移动来刷洗管道内部的洗涤刷供应部分。因此，可以提供能够容易地改变洗涤刷的便宜的内窥镜管道清洗刷盒和对应于内窥镜管道清洁刷盒的便于使用的内窥镜清洗消毒装置。

5. 发明授权

US08631684B2 Water leakage checking apparatus 有权
标题翻译：漏水检查装置
公开(公告)号：US08631684B2
公开(公告)日：2014-01-21
申请号：US13618297
申请日：2012-09-14
申请人： Aiko Kosugi , Akihisa Ogawa , Masahiko Tomita , Yoshitomo Yaguchi
发明人： Aiko Kosugi , Akihisa Ogawa , Masahiko Tomita , Yoshitomo Yaguchi
IPC分类号： G01M3/28
CPC分类号： A61B1/125 , A61B1/00055 , A61B1/00057 , A61B1/00059 , A61B1/00128 , G01M3/26 , G01M3/2846
摘要： A water leakage checking apparatus includes: a plurality of attachment portions for attaching an endoscope; a water leakage sensing portion that communicates with the plurality of attachment portions and simultaneously carries out a plurality of items of a water leakage check menu; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the water leakage checking apparatus includes: a control portion that determines an item of the water leakage check menu based on the read endoscope information, assigns the determined item of the water leakage check menu to one of the plurality of attachment portions, and outputs attachment portion identifying information for identifying the assigned one of the attachment portions; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.
摘要翻译：漏水检查装置包括：多个用于附接内窥镜的附接部分; 漏水检测部，其与所述多个安装部连通，同时进行多个漏水检查菜单; 以及从内窥镜读取内窥镜信息的内窥镜信息读取部。此外，漏水检查装置包括：控制部，其基于所读取的内窥镜信息确定漏水检查菜单的项目，将确定的漏水检查菜单项分配给多个附着部中的一个，并输出附着部分识别信息，用于识别所分配的一个附接部分; 以及通知部，其通知从控制部输出的附着部识别信息。

6. 发明授权

US07354858B2 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07354858B2
公开(公告)日：2008-04-08
申请号：US11091414
申请日：2005-03-29
申请人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
发明人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
IPC分类号： H01L21/44
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.
摘要翻译：半导体工艺的成膜方法被布置成在反应容器内的工艺场中通过CVD在目标衬底上形成非晶硅膜，同时在工艺领域中提供含有硅的第一工艺气体，并将工艺场设定在第一温度为550℃以上且处于第一压力。该方法被布置成随后在工艺领域中通过热处理多晶结晶非晶硅膜以形成多晶硅膜，同时将不同于第一工艺气体的第二工艺气体供应到工艺领域中，并且将工艺在比第一温度高的第二温度和第二压力下进行。

7. 发明申请

US20050176261A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20050176261A1
公开(公告)日：2005-08-11
申请号：US10957827
申请日：2004-10-05
申请人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
发明人： Takahito Umehara , Masahiko Tomita , Hirotake Fujita , Kazuhide Hasebe
IPC分类号： C23C16/455 , C23C16/18 , C23C16/40 , H01L21/02 , H01L21/205 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76876 , C23C16/18 , C23C16/40 , C23C16/45525 , C23C16/45546 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L28/65
摘要： A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.
摘要翻译：半导体工艺的成膜方法包括种子膜形成和主要成膜。在种子膜形成中，将含金属的原料气体和与其反应的第一辅助气体供给到容纳具有下层的目标基板的处理容器中，由此通过CVD在下层上形成种子膜。在主成膜中，将原料气体和与其反应的第二辅助气体供给到处理容器中，由此通过CVD在种子膜上形成主膜。种子膜形成包括交替且连续地执行的第一和第二周期。在第一期间，在第一辅助气体停止的同时将原料气体供给到处理容器。在第二期间，在停止原料气体的同时，将第一辅助气体供给到处理容器。

8. 发明授权

US07981809B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07981809B2
公开(公告)日：2011-07-19
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

9. 发明申请

US20050227459A1 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20050227459A1
公开(公告)日：2005-10-13
申请号：US11091414
申请日：2005-03-29
申请人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
发明人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
IPC分类号： C23C16/24 , C23C16/455 , C23C16/56 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/324 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.
摘要翻译：半导体工艺的成膜方法被布置成在反应容器内的工艺场中通过CVD在目标衬底上形成非晶硅膜，同时在工艺领域中提供含有硅的第一工艺气体，并将工艺场设定在第一温度为550℃以上且处于第一压力。该方法被布置成随后在工艺领域中通过热处理多晶结晶非晶硅膜以形成多晶硅膜，同时将不同于第一工艺气体的第二工艺气体供应到工艺领域中，并且将工艺在比第一温度高的第二温度和第二压力下进行。

10. 发明授权

US08080109B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080109B2
公开(公告)日：2011-12-20
申请号：US12149537
申请日：2008-05-02
申请人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： B08B9/08
CPC分类号： B08B5/00 , C23C16/345 , C23C16/4405 , H01L21/0217 , H01L21/0228 , H01L21/3185 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
摘要翻译：使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理反应室通过使自由基作用在反应室的内表面上。通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

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