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1. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

2. 发明申请

US20090137101A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090137101A1
公开(公告)日：2009-05-28
申请号：US12247470
申请日：2008-10-08
申请人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L21/71
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.
摘要翻译：为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

3. 发明申请

US20100006940A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20100006940A1
公开(公告)日：2010-01-14
申请号：US12497720
申请日：2009-07-06
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L27/12 , H01L21/762
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

4. 发明申请

US20110316082A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110316082A1
公开(公告)日：2011-12-29
申请号：US13230086
申请日：2011-09-12
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

5. 发明申请

US20120025274A1 SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US20120025274A1
公开(公告)日：2012-02-02
申请号：US13267024
申请日：2011-10-06
申请人： Hideto OHNUMA , Tetsuya KAKEHATA , Yoichi IIKUBO
发明人： Hideto OHNUMA , Tetsuya KAKEHATA , Yoichi IIKUBO
IPC分类号： H01L29/772 , H01L29/04
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

6. 发明申请

US20110039395A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110039395A1
公开(公告)日：2011-02-17
申请号：US12910320
申请日：2010-10-22
申请人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
发明人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

7. 发明申请

US20090111248A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20090111248A1
公开(公告)日：2009-04-30
申请号：US12247487
申请日：2008-10-08
申请人： Hideto OHNUMA , Tetsuya KAKEHATA , Akihisa SHIMOMURA , Shinya SASAGAWA , Motomu KURATA
发明人： Hideto OHNUMA , Tetsuya KAKEHATA , Akihisa SHIMOMURA , Shinya SASAGAWA , Motomu KURATA
IPC分类号： H01L21/02
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L21/302 , H01L21/3065 , H01L21/84
摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.
摘要翻译：通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻，通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

8. 发明申请

US20100203706A1 METHOD OF MANUFACTURING AN SOI SUBSTRATE AND METHOD OF MANUFACUTIRNG A SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20100203706A1
公开(公告)日：2010-08-12
申请号：US12762600
申请日：2010-04-19
申请人： Hideto OHNUMA , Ryota IMAHAYASHI , Yoichi IIKUBO , Kenichiro MAKINO , Sho NAGAMATSU
发明人： Hideto OHNUMA , Ryota IMAHAYASHI , Yoichi IIKUBO , Kenichiro MAKINO , Sho NAGAMATSU
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

9. 发明申请

US20090325363A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090325363A1
公开(公告)日：2009-12-31
申请号：US12489594
申请日：2009-06-23
申请人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
发明人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

10. 发明申请

US20090098739A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090098739A1
公开(公告)日：2009-04-16
申请号：US12244414
申请日：2008-10-02
申请人： Hideto OHNUMA , Takashi SHINGU , Tetsuya KAKEHATA , Kazutaka KURIKI , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Takashi SHINGU , Tetsuya KAKEHATA , Kazutaka KURIKI , Shunpei YAMAZAKI
IPC分类号： H01L21/31
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.
摘要翻译：本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

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