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1. 发明申请

US20140014181A1 GAS BARRIER LAMINATE FILM, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：气体阻隔层压薄膜及其制造方法
公开(公告)号：US20140014181A1
公开(公告)日：2014-01-16
申请号：US14008279
申请日：2012-03-29
申请人： Hidetaka Amanai , Makoto Miyazaki
发明人： Hidetaka Amanai , Makoto Miyazaki
IPC分类号： B32B33/00
CPC分类号： B32B33/00 , C23C14/0676 , C23C14/352 , Y10T428/265 , Y10T428/31504 , Y10T428/31678
摘要： The present invention provides a gas barrier laminate film containing a substrate film having on at least one surface thereof plural layers of an inorganic thin film layer, from a first layer to an n-th layer (wherein n represents an integer of 1 or more) of the inorganic thin film layer on a side of the substrate film being formed by a non-plasma film forming method, and an (n+1)-th layer formed thereon in contact therewith being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film containing a substrate film having on at least one surface thereof one or plural layers of an inorganic thin film layer, the method containing: forming from a first layer to an n-th layer of the inorganic thin film layer on a side of the substrate film by a non-plasma film forming method; and forming an (n+1)-th layer thereon in contact therewith by a facing target sputtering method, and thus provides a gas barrier laminate film with high gas barrier property and excellent productivity having a dense inorganic thin film layer that inflicts less damage to a substrate film, particularly to a resin film, on which the inorganic thin film layer is formed, and a method for producing the same.
摘要翻译：本发明提供一种阻气性层压膜，其含有在第一层至第n层（其中n表示1以上的整数）的至少一个表面上具有多层无机薄膜层的基板膜，通过非等离子体膜形成方法形成在基板膜侧的无机薄膜层，并且通过面对靶溅射方法形成与其形成的第（n + 1）层，一种含有在至少一个表面上具有一层或多层无机薄膜层的基材膜的阻气性层压膜的方法，所述方法包括：从第一层到第n层的无机薄膜通过非等离子体膜形成方法在衬底膜的一侧上形成层; 以及通过面对靶溅射法与其接触形成第（n + 1）层，从而提供具有高阻气性和优异的生产率的阻气性层压膜，其具有致密的无机薄膜层，对其造成较小的损伤特别是形成有无机薄膜层的树脂膜的基材膜及其制造方法。

2. 发明申请

US20140017419A1 GAS BARRIER LAMINATE FILM, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：气体阻隔层压薄膜及其制造方法
公开(公告)号：US20140017419A1
公开(公告)日：2014-01-16
申请号：US14008303
申请日：2012-03-29
申请人： Hidetaka Amanai , Makoto Miyazaki
发明人： Hidetaka Amanai , Makoto Miyazaki
IPC分类号： C01F7/02 , C23C14/06 , C01B21/082 , C23C28/04 , H01L31/048 , C23C14/08 , G02B1/10
CPC分类号： C01F7/02 , C01B21/0823 , C23C14/0652 , C23C14/081 , C23C14/10 , C23C14/352 , C23C28/04 , G02B1/105 , G02B1/14 , H01L31/049 , Y02E10/50 , Y10T428/1036 , Y10T428/1045 , Y10T428/265
摘要： To provide a gas barrier laminate film containing a substrate film having on at least one surface thereof one layer or plural layers of an inorganic thin film layer, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film, containing forming one layer or plural layers of an inorganic thin film layer on at least one surface of a substrate film, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and thus to provide a gas barrier laminate film with high gas barrier property having a dense inorganic thin film layer that inflicts less damage to a substrate film, particularly to a resin film, on which the inorganic thin film layer is formed, and a method for producing the same.
摘要翻译：为了提供含有在至少一个表面上具有一层或多层无机薄膜层的基材膜的阻气性层压膜，在基材膜一侧的无机薄膜层的第一层由面对靶溅射法，以及制造阻气性层压膜的方法，在基材膜的至少一个表面上形成一层或多层无机薄膜层，在第一层上形成无机薄膜层的第一层通过面对靶溅射法形成衬底膜的侧面，从而提供具有致密的无机薄膜层的阻气性高的阻气性层压膜，对基底膜，特别是对树脂膜造成较小的损伤，形成无机薄膜层的方法及其制造方法。

3. 发明申请

US20100163931A1 GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： III-V族III族氮化物层及其制造方法
公开(公告)号：US20100163931A1
公开(公告)日：2010-07-01
申请号：US12293643
申请日：2007-03-19
申请人： Hiroshi Fujioka , Atsushi Kobayashi , Hideyoshi Horie , Hidetaka Amanai , Satoru Magao
发明人： Hiroshi Fujioka , Atsushi Kobayashi , Hideyoshi Horie , Hidetaka Amanai , Satoru Magao
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C23C14/0026 , C23C14/0617 , C23C14/28 , C30B23/02 , C30B23/025 , C30B29/403 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/02658
摘要： There is disclosed a hexagonal Group III-V nitride layer exhibiting high quality crystallinity capable of improving the properties of a semiconductor device such as a light emitting element. This nitride layer is a Group III-V nitride layer belonging to hexagonal crystal formed by growth on a substrate having a different lattice constant, which has a growth-plane orientation of {1-100} and in which a full width at half maximum b1 of angle dependence of X-ray diffraction intensity in a {1-210} plane perpendicular to the growth-plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≦b1≦0.5°, or the full width at half maximum b2 of angle dependence of X-ray diffraction intensity in a {0001} plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≦b2≦0.5°.
摘要翻译：公开了能够改善诸如发光元件的半导体器件的性能的显示高质量结晶度的六边形III-V族氮化物层。该氮化物层是属于六方晶的III-V族氮化物层，其通过在具有不同晶格常数的基板上生长形成，其具有{1-100}的生长面取向，并且其中半峰全宽度b1 在与生长面平行的X射线入射角的垂直于生长面的{1-210}面中的X射线衍射强度的角度依赖性满足条件为0.01°＆lt; nlE; b1＆nlE; 0.5° 或者从与生长面平行的方向的X射线入射角的{0001}面内的X射线衍射强度的角度依赖性的半高度b2的全宽满足0.01°＆lt; N1E; b2＆nlE; 0.5的条件 °。

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