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1. 发明授权

US06873025B2 Photodiode device including window defined in passivation layer for removing electrostatic charge 失效
标题翻译：光电二极管器件包括在钝化层中定义的窗口，用于去除静电电荷
公开(公告)号：US06873025B2
公开(公告)日：2005-03-29
申请号：US09984657
申请日：2001-10-30
申请人： Hideo Wada , Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Shigeki Hayashida
发明人： Hideo Wada , Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Shigeki Hayashida
IPC分类号： H01L27/14 , H01L29/40 , H01L29/88 , H01L31/0216 , H01L31/06 , H01L31/10
CPC分类号： H01L31/02161
摘要： A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.
摘要翻译：光电二极管包括第一导电类型半导体衬底或第一导电类型半导体层; 设置在所述第一导电型半导体基板或所述第一导电型半导体层上的第二导电型半导体层; 设置在所述第二导电型半导体层的位于光接收区域的部分的表面上的防反射膜; 设置在所述光接收区域附近的区域中的第一导电层; 以及设置在第一导电层上的钝化层。通过第一导电类型半导体衬底和第一导电类型半导体层之一以及第二导电类型半导体层的接合来检测入射在光电二极管上的光。光接收区域附近的区域包括在钝化层中具有用于部分地暴露第一导电层的开口的窗口区域。

2. 发明授权

US06600174B2 Light receiving element and semiconductor laser device 失效
公开(公告)号：US06600174B2
公开(公告)日：2003-07-29
申请号：US09757473
申请日：2001-01-11
申请人： Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Masaru Kubo
发明人： Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Masaru Kubo
IPC分类号： H01L3100
CPC分类号： H01L31/02005 , H01L23/53223 , H01L24/05 , H01L24/45 , H01L24/48 , H01L31/02161 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05644 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01074 , H01L2924/01079 , H01L2924/05042 , H01L2924/12042 , H01L2924/12043 , H01S5/0282 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

3. 发明申请

US20050001231A1 Light receiving element and light receiving device incorporating circuit and optical disc drive 审中-公开
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US20050001231A1
公开(公告)日：2005-01-06
申请号：US10497202
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： G11B7/12 , G11B7/123 , G11B7/13 , H01L27/14 , H01L31/0216 , H01L31/10 , H01L31/103 , H01L33/00
CPC分类号： G11B7/123 , G11B7/13 , H01L27/14 , H01L31/02161 , H01L31/103
摘要： A light receiving device includes a P type diffusion layer (101), a P type semiconductor layer (102), an N type diffusion layer (103) serving as a light receiving part, and a light transmitting film (104), all formed on a p type silicon substrate (100). The N type diffusion layer (103) has a thickness of 0.8 μm to 1.0 μm which is larger than an absorption length of incident light having wavelength of 400 nm, and such a concentration profile that a impurity concentration is not higher than 1E19 cm−3 on a surface and has a peak in a vicinity of the surface. Since recombination of carriers generated by the incident light is prevented in the vicinity of the surface of the N type diffusion layer (103), sensitivity of the light receiving device is enhanced and response speed is increased by the low-resistance N type diffusion layer (103) having a larger junction depth.
摘要翻译：光接收装置包括：P型扩散层（101），P型半导体层（102），用作光接收部分的N型扩散层（103）和透光膜（104），全部形成在 ap型硅衬底（100）。 N型扩散层（103）的厚度为0.8μm〜1.0μm，比波长400nm的入射光的吸收长度大，杂质浓度不高于1E19cm -1的浓度分布， 3>在表面附近具有峰值。由于在N型扩散层（103）的表面附近防止了由入射光产生的载流子的复合，因此通过低电阻N型扩散层提高了光接收装置的灵敏度和响应速度（ 103）具有较大的结深度。

4. 发明授权

US07307326B2 Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US07307326B2
公开(公告)日：2007-12-11
申请号：US10499357
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/00 , H01L31/0232
CPC分类号： H01L31/103 , H01L31/02161
摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.
摘要翻译：光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

5. 发明申请

US20050116320A1 Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US20050116320A1
公开(公告)日：2005-06-02
申请号：US10499357
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/0216 , H01L31/103 , H01L23/58
CPC分类号： H01L31/103 , H01L31/02161
摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.
摘要翻译：光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

6. 发明申请

US20050045979A1 Light receiving device circuit-built-in type light receiving unit and optical disk unit 审中-公开
标题翻译：光接收装置电路内置型光接收单元和光盘单元
公开(公告)号：US20050045979A1
公开(公告)日：2005-03-03
申请号：US10497242
申请日：2002-11-29
申请人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/0216 , H01L31/103 , H01L27/14
CPC分类号： H01L31/02161 , H01L31/103 , H01L31/1035
摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.
摘要翻译：在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型以相应地减小光接收单元之间的泄漏电流。

7. 发明授权

US07098489B2 Split type light receiving element and circuit-built-in light-receiving element and optical disk drive 失效
标题翻译：分体式光接收元件和电路内置光接收元件和光盘驱动器
公开(公告)号：US07098489B2
公开(公告)日：2006-08-29
申请号：US10483493
申请日：2002-07-03
申请人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo
发明人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo
IPC分类号： H01L29/205
CPC分类号： H01L31/103
摘要： A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.
摘要翻译：多个N型扩散层在P型半导体层上分开规定距离地形成。形成在至少N型扩散层之间的P型防漏层防止了扩散层之间的泄漏。在包括扩散层和防漏层的P型半导体层的至少入射光区域中形成介电膜。因此，即使在电介质膜中积累电荷并且在光接收表面上的整个区域具有均匀的灵敏度的情况下，提供了作为分割型光接收元件的分体式光接收元件，并且电路内置光接收元件和使用分离式光接收元件的光盘装置。

8. 发明授权

US06593165B2 Circuit-incorporating light receiving device and method of fabricating the same 失效
公开(公告)号：US06593165B2
公开(公告)日：2003-07-15
申请号：US10152732
申请日：2002-05-23
申请人： Takahiro Takimoto , Naoki Fukunaga , Isamu Ohkubo , Toshimitsu Kasamatsu , Mutsumi Oka , Masaru Kubo
发明人： Takahiro Takimoto , Naoki Fukunaga , Isamu Ohkubo , Toshimitsu Kasamatsu , Mutsumi Oka , Masaru Kubo
IPC分类号： H01L2100
CPC分类号： H01L27/144
摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

9. 发明授权

US06313484B1 Circuit-integrated light-receiving device 有权
标题翻译：电路集成光接收装置
公开(公告)号：US06313484B1
公开(公告)日：2001-11-06
申请号：US09472886
申请日：1999-12-28
申请人： Isamu Ohkubo , Masaru Kubo , Naoki Fukunaga , Takahiro Takimoto , Mutsumi Oka , Toshimitsu Kasamatsu
发明人： Isamu Ohkubo , Masaru Kubo , Naoki Fukunaga , Takahiro Takimoto , Mutsumi Oka , Toshimitsu Kasamatsu
IPC分类号： H01L2715
CPC分类号： H01L27/1443
摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.
摘要翻译：本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。第一区域位于光接收装置部分中。在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

10. 发明授权

US06404029B1 Light sensitive element and light sensitive element having internal circuitry 有权
标题翻译：具有内部电路的光敏元件和光敏元件
公开(公告)号：US06404029B1
公开(公告)日：2002-06-11
申请号：US09656461
申请日：2000-09-06
申请人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
发明人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
IPC分类号： H01L2714
CPC分类号： H01L27/1443 , H01L31/0352
摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.
摘要翻译：光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面。扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

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