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    • 6. 发明授权
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US08852389B2
    • 2014-10-07
    • US13233082
    • 2011-09-15
    • Taichi MondenJunichi KitagawaJun YamashitaHideo Nakamura
    • Taichi MondenJunichi KitagawaJun YamashitaHideo Nakamura
    • C23C16/00C23F1/00H01L21/306H01J37/32
    • H01J37/32192
    • There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.
    • 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置,并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成,并且用作与安装台5内的电极7对置的面对电极,其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极(面对电极表面积/偏置电极面积)的表面积的比率在约1至约5的范围内。