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1. 发明授权

US07829259B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07829259B2
公开(公告)日：2010-11-09
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028 , C08F2/38
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

2. 发明授权

US07592123B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07592123B2
公开(公告)日：2009-09-22
申请号：US10557694
申请日：2004-06-02
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028 , C08F2/38
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

3. 发明申请

US20090142700A1 RESIN FOR PHOTORESIST COMPOSITION, PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：光电组合物树脂，光电组合物和形成电阻图案的方法
公开(公告)号：US20090142700A1
公开(公告)日：2009-06-04
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/20 , C08G63/00 , C08G63/688 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

4. 发明申请

US20070065748A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图
公开(公告)号：US20070065748A1
公开(公告)日：2007-03-22
申请号：US10557694
申请日：2003-06-02
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

5. 发明申请

US20070231708A1 Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns 失效
标题翻译：高分子化合物，酸发生剂，正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070231708A1
公开(公告)日：2007-10-04
申请号：US11572990
申请日：2005-07-01
申请人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
发明人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
IPC分类号： C08F220/38 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/38 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition. The polymer compound includes a structural unit (a1) derived from an (α-lower alkyl) acrylate ester having an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) represented by a general formula (a2-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group; A represents a divalent organic group; B represents a monovalent organic group; X represents a sulfur atom or iodine atom; n represents either 1 or 2; and Y represents a straight-chain, branched or cyclic alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom], and a structural unit (a3) derived from an (α-lower alkyl) acrylate ester that contains a polar group-containing aliphatic polycyclic group.
摘要翻译：本发明提供一种能够形成正性抗蚀剂组合物的高分子化合物，其可以形成具有降低的LER水平的高分辨率图案，由这种高分子化合物形成的酸发生剂，包含这种高分子化合物的正性抗蚀剂组合物和形成使用这种正性抗蚀剂组合物的抗蚀剂图案的方法。高分子化合物包括衍生自具有酸解离性，溶解抑制基团的（α-低级烷基）丙烯酸酯的结构单元（a1），由以下所示的通式（a2-1）表示的结构单元（a2） [式中，R表示氢原子或低级烷基; A表示二价有机基团; B表示一价有机基团; X表示硫原子或碘原子; n表示1或2; 和Y表示其中至少一个氢原子可被氟原子取代的直链，支链或环状烷基]和衍生自（α-低级烷基）丙烯酸酯的结构单元（a3），其包含含极性基团的脂族多环基团。

6. 发明授权

US07482108B2 Polymer compound, acid generator, positive resist composition, and method for formation of resist patterns 失效
标题翻译：高分子化合物，酸发生剂，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07482108B2
公开(公告)日：2009-01-27
申请号：US11572990
申请日：2005-07-01
申请人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
发明人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
IPC分类号： G30F7/00 , G30F7/004
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/38 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition. The polymer compound includes a structural unit (a1) derived from an (α-lower alkyl) acrylate ester having an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) represented by a general formula (a2-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group; A represents a divalent organic group; B represents a monovalent organic group; X represents a sulfur atom or iodine atom; n represents either 1 or 2; and Y represents a straight-chain, branched or cyclic alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom], and a structural unit (a3) derived from an (α-lower alkyl) acrylate ester that contains a polar group-containing aliphatic polycyclic group.
摘要翻译：本发明提供一种能够形成正性抗蚀剂组合物的高分子化合物，其可以形成具有降低的LER水平的高分辨率图案，由这种高分子化合物形成的酸发生剂，包含这种高分子化合物的正性抗蚀剂组合物和形成使用这种正性抗蚀剂组合物的抗蚀剂图案的方法。高分子化合物包括衍生自具有酸解离性，溶解抑制基团的（α-低级烷基）丙烯酸酯的结构单元（a1），由以下所示的通式（a2-1）表示的结构单元（a2） [式中，R表示氢原子或低级烷基; A表示二价有机基团; B表示一价有机基团; X表示硫原子或碘原子; n表示1或2; 和Y表示其中至少一个氢原子可被氟原子取代的直链，支链或环状烷基]和衍生自（α-低级烷基）丙烯酸酯的结构单元（a3），其包含含极性基团的脂族多环基团。

7. 发明授权

US07488568B2 Resist composition, method of forming resist pattern, compound and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和酸发生剂
公开(公告)号：US07488568B2
公开(公告)日：2009-02-10
申请号：US12060695
申请日：2008-04-01
申请人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
发明人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
IPC分类号： G03F7/004 , G03F7/30 , C07D333/46
CPC分类号： C07D333/76 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/123
摘要： A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R402 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).
摘要翻译：包含基础组分（A）和酸产生剂组分（B）的抗蚀剂组合物，所述酸产生剂组分（B）包括含有下述通式（b1-8）表示的化合物的酸产生剂（B1）（其中R401表示酸解离的溶解抑制基团; R 41至R 43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; Q表示二价连接基团或单键; X表示阴离子）或包含下述通式（b1-9）表示的化合物的酸产生剂（B1'）（其中R402和R403各自独立地表示氢原子，烷基基团或卤代烷基; R404表示烷基或卤代烷基，其中R403和R404可以彼此键合以形成环结构;并且X-表示阴离子）。

8. 发明申请

US20080248422A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR 有权
标题翻译：抗菌组合物，形成耐药性图案，化合物和酸产生剂的方法
公开(公告)号：US20080248422A1
公开(公告)日：2008-10-09
申请号：US12060695
申请日：2008-04-01
申请人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
发明人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
IPC分类号： G03F7/025 , C07D333/50
CPC分类号： C07D333/76 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/123
摘要： A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R403 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).
摘要翻译：包含基础组分（A）和酸产生剂组分（B）的抗蚀剂组合物，所述酸产生剂组分（B）包括含有下述通式（b1-8）表示的化合物的酸产生剂（B1）（其中R 401表示酸解离的溶解抑制基团; R 41至R 43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; Q表示二价连接基团或单键; X-O - 表示阴离子）或酸发生剂（ B1'），其包含如下所示的由通式（b1-9）表示的化合物（其中R 403和R 403）各自独立地表示氢原子，烷基或卤代烷基; R 404表示烷基或卤代烷基，其中R 403和R 404可彼此键合至形成一个戒指结构; 而X - 代表阴离子）。

9. 发明授权

US07682770B2 Resist composition and method for forming resist pattern 有权
标题翻译：抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07682770B2
公开(公告)日：2010-03-23
申请号：US10576405
申请日：2004-10-20
申请人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/122
摘要： A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.
摘要翻译：提供了抗蚀剂组合物，其产生精细的分辨率，并且改善了线边缘粗糙度和聚焦深度的水平。该组合物包含在酸作用下发生碱溶解性变化的树脂成分（A）和暴露时产生酸的酸发生剂成分（B），其中，成分（A）为重均分子量由（甲基）丙烯酸酯衍生的含有结构单元（a）的重量不大于8,000，组分（B）包括至少一种由通式（b-1）或通式（b- 2）如下所示。

10. 发明申请

US20070275307A1 Resist Composition and Method for Forming Resist Pattern 有权
标题翻译：抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070275307A1
公开(公告)日：2007-11-29
申请号：US10576405
申请日：2004-10-20
申请人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
IPC分类号： H01L21/027 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/122
摘要： A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.
摘要翻译：提供了抗蚀剂组合物，其产生精细的分辨率，并且改善了线边缘粗糙度和聚焦深度的水平。该组合物包含在酸作用下发生碱溶解性变化的树脂成分（A）和暴露时产生酸的酸发生剂成分（B），其中，成分（A）为重均分子量由（甲基）丙烯酸酯衍生的含有结构单元（a）的重量不大于8,000，组分（B）包括至少一种由通式（b-1）或通式（b- 2）如下所示。

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