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    • 4. 发明授权
    • Range sensor and range image sensor
    • 量程传感器和量程图像传感器
    • US08598674B2
    • 2013-12-03
    • US13498202
    • 2010-11-18
    • Mitsuhito MaseTakashi SuzukiTomohiro Yamazaki
    • Mitsuhito MaseTakashi SuzukiTomohiro Yamazaki
    • H01L27/146G01C3/08
    • H01L27/14643G01S7/4814G01S7/4816G01S7/4863G01S17/89H01L27/14603H01L27/1464
    • A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
    • 范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A,光栅电极PG,第一和第二栅电极TX1,TX2,第一和第二半导体区域FD1 ,FD2和第三半导体区域SR1。 光栅电极PG设置在表面1FT上。 第一和第二栅电极TX1,TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1,FD2累积流入各栅极电极TX1,TX2正下方的各个电荷。 第三半导体区域SR1远离第一和第二半导体区域FD1,FD2以及光入射面1BK侧,并且具有与第一和第二半导体区域FD1,FD2相反的导电类型。