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    • 1. 发明授权
    • Method for detecting defects in dielectric film
    • 电介质膜缺陷检测方法
    • US06118280A
    • 2000-09-12
    • US49201
    • 1998-03-27
    • Hideki MatsunagaIsao SuzukiHiroshi TomitaShiro TakenoAkira Okada
    • Hideki MatsunagaIsao SuzukiHiroshi TomitaShiro TakenoAkira Okada
    • G01N27/00G01N1/28G01N21/84H01L21/66
    • G01N21/8422G01N1/2813
    • Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.
    • 公开了一种用于检测电介质膜中的缺陷的方法和装置。 电介质膜以含有金属的电解质溶液的方式通电,使电介质膜带电为负电荷,从而在对应于该缺陷的位置处将金属沉积在电介质膜上。 检测方法具有第一沉积步骤,用于以包围与缺陷相对应的位置的环形形式在电介质膜上形成第一金属沉积物; 以及第二沉积步骤,用于在所述电介质膜上形成位于与所述缺陷相对应的位置上的第二金属沉积物。 检测装置具有用于容纳电解质溶液的容器; 用于使所述电介质膜带电的第一电极和第二电极; 以及用于可控制地施加电压以在所述第一电极和所述第二电极之间通电的电源,其中所述施加电压的值和方向可变。