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1. 发明授权

US08872227B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08872227B2
公开(公告)日：2014-10-28
申请号：US13402631
申请日：2012-02-22
申请人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/861
摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要翻译：氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。氮化物半导体层包括元件区域和围绕元件区域的隔离区域。元件区域形成在正常区域上。界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

2. 发明授权

US08569797B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08569797B2
公开(公告)日：2013-10-29
申请号：US13185818
申请日：2011-07-19
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.
摘要翻译：场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含地区。第二半导体层包括位于第一区域正上方的第二区域。第二区域的非导电性杂质的浓度低于第一区域的浓度。

3. 发明申请

US20120119261A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120119261A1
公开(公告)日：2012-05-17
申请号：US13356156
申请日：2012-01-23
申请人： Hidekazu UMEDA , Tetsuzo Ueda
发明人： Hidekazu UMEDA , Tetsuzo Ueda
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.
摘要翻译：半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

4. 发明申请

US20120153355A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20120153355A1
公开(公告)日：2012-06-21
申请号：US13402631
申请日：2012-02-22
申请人： Hidekazu UMEDA , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu UMEDA , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/78
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/861
摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要翻译：氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。氮化物半导体层包括元件区域和围绕元件区域的隔离区域。元件区域形成在正常区域上。界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

5. 发明授权

US08692292B2 Semiconductor device including separated gate electrode and conductive layer 有权
标题翻译：半导体器件包括分离的栅电极和导电层
公开(公告)号：US08692292B2
公开(公告)日：2014-04-08
申请号：US13356156
申请日：2012-01-23
申请人： Hidekazu Umeda , Tetsuzo Ueda
发明人： Hidekazu Umeda , Tetsuzo Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.
摘要翻译：半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

6. 发明授权

US08390029B2 Semiconductor device for reducing and/or preventing current collapse 有权
标题翻译：用于减少和/或防止电流崩溃的半导体装置
公开(公告)号：US08390029B2
公开(公告)日：2013-03-05
申请号：US12867427
申请日：2009-01-23
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/00
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/432 , H01L29/66462
摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).
摘要翻译：半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107）浓度p型GaN层（106）。在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域在n型AlGaN层（107）中。

7. 发明申请

US20110012173A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110012173A1
公开(公告)日：2011-01-20
申请号：US12867427
申请日：2009-01-23
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/12
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/432 , H01L29/66462
摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).
摘要翻译：半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107）浓度p型GaN层（106）。在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域在n型AlGaN层（107）中。

8. 发明授权

US08779438B2 Field-effect transistor with nitride semiconductor and method for fabricating the same 有权
标题翻译：具有氮化物半导体的场效应晶体管及其制造方法
公开(公告)号：US08779438B2
公开(公告)日：2014-07-15
申请号：US13569014
申请日：2012-08-07
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/15 , H01L31/0256 , H01L29/66 , H01L21/02 , H01L29/78
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

9. 发明授权

US08742467B2 Bidirectional switching device and bidirectional switching circuit using the same 有权
标题翻译：双向开关器件和双向开关电路使用相同
公开(公告)号：US08742467B2
公开(公告)日：2014-06-03
申请号：US13613724
申请日：2012-09-13
申请人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
发明人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
IPC分类号： H01L29/772 , H01L29/778
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/1066 , H01L29/2003
摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.
摘要翻译：双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

10. 发明授权

US08344423B2 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08344423B2
公开(公告)日：2013-01-01
申请号：US13360275
申请日：2012-01-27
申请人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7783
摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
摘要翻译：氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域形成有具有比控制区域更高的电阻的高电阻区域。

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