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1. 发明申请

US20120081628A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20120081628A1
公开(公告)日：2012-04-05
申请号：US13252478
申请日：2011-10-04
申请人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
发明人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
IPC分类号： G02F1/136 , H01L33/62
CPC分类号： G02F1/1368 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.
摘要翻译：一种液晶显示装置，用于增加像素中的TFT的导通电流，同时抑制其中通过等离子体CVD连续地形成TFT中的半导体层和第一n + -a-Si层的导通电流的变化。同时对半导体层和第一n + a-Si层进行图案化。然后，形成第二n + a-Si层，以覆盖第一n + -a-Si层的上表面和半导体层的侧部。通过在半导体层上连续地形成第一n + -a-Si层，可以增加导通电流并且可以减小TFT的导通电流的变化。

2. 发明授权

US08080449B2 Method for manufacturing thin-film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08080449B2
公开(公告)日：2011-12-20
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/00
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译：栅电极形成在基板上。形成栅绝缘膜以覆盖栅电极。半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。在施加了等离子体处理的半导体层的表面层上形成导电膜。通过蚀刻导电膜形成源电极和漏电极。

3. 发明授权

US08717510B2 Liquid crystal display device and manufacturing method thereof 有权
公开(公告)号：US08717510B2
公开(公告)日：2014-05-06
申请号：US13252478
申请日：2011-10-04
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh
IPC分类号： G02F1/136
摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

4. 发明申请

US20100255643A1 METHOD FOR MANUFACTURING THIN-FILM TRANSISTORS 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20100255643A1
公开(公告)日：2010-10-07
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/336 , H01L21/322
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译：栅电极形成在基板上。形成栅绝缘膜以覆盖栅电极。半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。在施加等离子体处理的半导体层的表面层上形成导电膜。通过蚀刻导电膜形成源电极和漏电极。

5. 发明授权

US08958138B2 Display device and method of manufacturing the display device 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08958138B2
公开(公告)日：2015-02-17
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , G02B26/08 , B81B3/00
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译：在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。显示装置包括：显示面板，包括第一基板和第二基板。显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在所述至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

6. 发明申请

US20120307334A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权
标题翻译：显示装置和制造显示装置的方法
公开(公告)号：US20120307334A1
公开(公告)日：2012-12-06
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , H01L33/08
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译：在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。显示装置包括：显示面板，包括第一基板和第二基板。显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

7. 发明授权

US08610868B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08610868B2
公开(公告)日：2013-12-17
申请号：US13042490
申请日：2011-03-08
申请人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
发明人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
IPC分类号： G02F1/1345
CPC分类号： G02F1/13458 , G02F1/1333 , G02F1/136204 , G02F2001/133388 , G02F2202/103 , G02F2202/22
摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.
摘要翻译：为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造和端子内部的控制区域。图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。当感应到静电时，导致端子外部的区域发生介电击穿。因此，显示区域和控制区域被保护免受静电。

8. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

9. 发明申请

US20100032673A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20100032673A1
公开(公告)日：2010-02-11
申请号：US12534904
申请日：2009-08-04
申请人： Terunori SAITOU , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
发明人： Terunori SAITOU , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L33/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/04
摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.
摘要翻译：液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并且形成在栅电极之上，其间插入有栅极绝缘膜。源电极或漏电极形成在半导体层的上方。在源极或漏电极与半导体层之间形成n + Si层。由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

10. 发明申请

US20090065777A1 Display Device and Manufacturing Method Therefor 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090065777A1
公开(公告)日：2009-03-12
申请号：US12208371
申请日：2008-09-11
申请人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
发明人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78678
摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
摘要翻译：在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个，并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

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