专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08035460B2 Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same 有权
标题翻译：表面声波装置，表面声波滤波器和使用其的天线双工器，以及使用其的电子设备
公开(公告)号：US08035460B2
公开(公告)日：2011-10-11
申请号：US12279631
申请日：2007-02-14
申请人： Hidekazu Nakanishi , Ryoichi Takayama , Yukio Iwasaki , Yosuke Hamaoka , Hiroyuki Nakamura
发明人： Hidekazu Nakanishi , Ryoichi Takayama , Yukio Iwasaki , Yosuke Hamaoka , Hiroyuki Nakamura
IPC分类号： H03H9/64 , H03H9/72 , H03H3/08
CPC分类号： H03H9/14538 , H03H3/08 , H03H9/1452 , H03H9/6483 , Y10T29/42
摘要： A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要翻译：表面声波装置包括：包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。当IDT的一个间距的间距宽度为p时，一个电极指的宽度为p1，电极指之间的宽度为p2，IDT的厚度为h，满足关系，p1 + p2 = p，h /（2×p）≥4.5％。由此，能够实现适当的反射特性，能够获得具有优异的频率和电特性的温度系数的表面声波装置。

2. 发明申请

US20100164646A1 SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 有权
标题翻译：表面声波装置，表面声波滤波器及使用其的天线双工器及使用其的电子设备
公开(公告)号：US20100164646A1
公开(公告)日：2010-07-01
申请号：US12279631
申请日：2007-02-14
申请人： Hidekazu Nakanishi , Ryoichi Takayama , Yukio Iwasaki , Yosuke Hamaoka , Hiroyuki Nakamura
发明人： Hidekazu Nakanishi , Ryoichi Takayama , Yukio Iwasaki , Yosuke Hamaoka , Hiroyuki Nakamura
IPC分类号： H03H9/76 , H03H9/02 , H01L41/22
CPC分类号： H03H9/14538 , H03H3/08 , H03H9/1452 , H03H9/6483 , Y10T29/42
摘要： A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要翻译：表面声波装置包括：包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。当IDT的一个间距的间距宽度为p时，一个电极指的宽度为p1，电极指之间的宽度为p2，IDT的厚度为h，满足关系，p1 + p2 = p，h /（2×p）≥4.5％。由此，能够实现适当的反射特性，能够获得具有优异的频率和电特性的温度系数的表面声波装置。

3. 发明授权

US08669832B2 Acoustic wave device and acoustic wave filter 有权
标题翻译：声波装置和声波滤波器
公开(公告)号：US08669832B2
公开(公告)日：2014-03-11
申请号：US13125633
申请日：2010-02-23
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
IPC分类号： H03H9/64 , H03H9/25 , H03H9/42
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译：声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。

4. 发明申请

US20150236238A1 ELASTIC WAVE ELEMENT AND LADDER FILTER USING SAME 有权
标题翻译：弹性波元件和梯形滤波器使用相同
公开(公告)号：US20150236238A1
公开(公告)日：2015-08-20
申请号：US14624993
申请日：2015-02-18
申请人： Yosuke Hamaoka , Mitsunori Miyanari , Hiroyuki Nakamura , Hidekazu Nakanishi
发明人： Yosuke Hamaoka , Mitsunori Miyanari , Hiroyuki Nakamura , Hidekazu Nakanishi
IPC分类号： H03H9/64 , H03H9/205 , H01L41/047 , H01L41/107
CPC分类号： H03H3/02 , H01L41/0472 , H01L41/107 , H03H9/02944 , H03H9/02992 , H03H9/17 , H03H9/54 , H03H9/605 , H03H9/6463 , H03H9/6483
摘要： Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.
摘要翻译：用于减少弹性波元件中的电损耗的方法和装置。在一个示例中，弹性波形元件包括具有上表面的压电体，设置在压电体上的叉指式换能器（IDT）电极，布置在压电体上并与IDT电极电连接的连接布线，连接布线具有下连接布线和设置在下连接布线上方的上连接布线，以及设置在连接布线上方的加强电极，加强电极与下连接布线接触并电连接。

5. 发明申请

US20110193655A1 ACOUSTIC WAVE DEVICE AND ACOUSTIC WAVE FILTER 有权
标题翻译：声波设备和声波滤波器
公开(公告)号：US20110193655A1
公开(公告)日：2011-08-11
申请号：US13125633
申请日：2010-02-23
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
IPC分类号： H03H9/54
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译：声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。

6. 发明申请

US20100060103A1 SURFACE ACOUSTIC WAVE RESONATOR 有权
标题翻译：表面声波谐振器
公开(公告)号：US20100060103A1
公开(公告)日：2010-03-11
申请号：US12513903
申请日：2007-11-07
申请人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
发明人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/205 , H01L41/047 , H01L41/08
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/25
摘要： A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (10), a first surface acoustic wave resonator (20) having a comb electrode (11) provided on the piezoelectric substrate (10), and a second surface acoustic wave resonator (30) having a comb electrode (12) provided on the piezoelectric substrate (10). The first surface acoustic wave resonator (20) and the second surface acoustic wave resonator (30) are apodized and connected in parallel.
摘要翻译：本发明的声表面波谐振器包括压电基片（10），具有设在压电基片（10）上的梳形电极（11）的第一表面声波谐振器（20）和第二表面声波谐振器 30），其具有设置在所述压电基板（10）上的梳状电极（12）。第一表面声波谐振器（20）和第二声表面波谐振器（30）被并口并联并联。

7. 发明申请

US20120139662A1 ELASTIC WAVE ELEMENT, AND ELECTRICAL APPARATUS AND DUPLEXER USING SAME 有权
标题翻译：弹性波形元件，以及使用相同的电气设备和双机器
公开(公告)号：US20120139662A1
公开(公告)日：2012-06-07
申请号：US13390115
申请日：2010-10-29
申请人： Joji Fujiwara , Yosuke Hamaoka , Tetsuya Tsurunari , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Joji Fujiwara , Yosuke Hamaoka , Tetsuya Tsurunari , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/25 , H03H9/72
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/64
摘要： An acoustic wave device (5) includes a piezoelectric substrate (6) made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode (7) disposed on the piezoelectric substrate (6) for exciting a major acoustic wave of a wavelength λ, and a protective layer (8) disposed on the piezoelectric substrate (6) to cover the electrode (7). The protective layer (8) has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.
摘要翻译：声波装置（5）包括由具有欧拉角（＆phgr;; thetas;ψ）的铌酸锂材料制成的压电基片（6），设置在压电基片（6）上的电极（7）波长λ的主声波和设置在压电基板（6）上以覆盖电极（7）的保护层（8）。保护层（8）的厚度大于0.27λ。欧拉角满足-100°＆nlE;＆thetas;＆nlE; -60°; 1.193＆phgr。-2°＆nlE;ψ＆nlE; 1.193＆phgr。+ 2°; ψ＆nlE; -2＆phgr; -3°或-2＆phgr; + 3°＆nlE;ψ。

8. 发明授权

US08084915B2 Surface acoustic wave resonator having comb electrodes with different overlapping lengths 有权
标题翻译：表面声波谐振器具有不同重叠长度的梳状电极
公开(公告)号：US08084915B2
公开(公告)日：2011-12-27
申请号：US12513903
申请日：2007-11-07
申请人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
发明人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/25 , H03H9/145
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/25
摘要： A surface acoustic wave resonator includes a piezoelectric substrate, a first surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate, and a second surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate. The first surface acoustic wave resonator and the second surface acoustic wave resonator are apodized and connected in parallel.
摘要翻译：表面声波谐振器包括压电基片，具有设置在压电基片上的梳状电极的第一声表面波谐振器和设置在压电基片上的梳状电极的第二声表面波谐振器。第一表面声波谐振器和第二声表面波谐振器被并口并联并联。

9. 发明授权

US09425766B2 Elastic wave element, and electrical apparatus and duplexer using same 有权
标题翻译：弹性波形元件，以及使用其的电气设备和双工器
公开(公告)号：US09425766B2
公开(公告)日：2016-08-23
申请号：US13390115
申请日：2010-10-29
申请人： Joji Fujiwara , Yosuke Hamaoka , Tetsuya Tsurunari , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Joji Fujiwara , Yosuke Hamaoka , Tetsuya Tsurunari , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/64 , H03H9/72 , H03H9/02 , H03H9/145
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/64
摘要： An acoustic wave device includes a piezoelectric substrate made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode disposed on the piezoelectric substrate for exciting a major acoustic wave of a wavelength λ, and a protective layer disposed on the piezoelectric substrate to cover the electrode. The protective layer has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.
摘要翻译：声波装置包括由具有欧拉角（φ，θ，ψ）的铌酸锂材料制成的压电基板，设置在压电基板上用于激发波长λ的主要声波的电极，以及设置在压电基片覆盖电极。保护层的厚度大于0.27λ。欧拉角满足-100°≤θ≤-60°; 1.193φ-2°≤ψ≤1.193φ+ 2°; ψ≤-2φ-3°或-2φ+ 3°≤ψ。

10. 发明授权

US07999437B2 Acoustic boundary wave device and electronic apparatus using the same 有权
标题翻译：声界波装置及其使用的电子装置
公开(公告)号：US07999437B2
公开(公告)日：2011-08-16
申请号：US12619077
申请日：2009-11-16
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto
IPC分类号： H03H9/25
CPC分类号： H03H9/0222
摘要： An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.
摘要翻译：声界波装置包括压电体，形成在压电体上的IDT层，形成在压电体上并连接到IDT层的焊盘电极层，形成在压电体上并覆盖至少一部分的第一电介质层以及形成在所述压电体上的第二电介质层，覆盖所述第一电介质层，并且具有露出所述焊盘电极层的顶面的至少一部分的开口部。焊盘电极层的形成金属的侧面比第二电介质层更容易扩散到第一电介质层。第二电介质层覆盖焊盘电极层的侧面，并且防止第一电介质层接触焊盘电极层的侧面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式