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1. 发明授权

US08084915B2 Surface acoustic wave resonator having comb electrodes with different overlapping lengths 有权
标题翻译：表面声波谐振器具有不同重叠长度的梳状电极
公开(公告)号：US08084915B2
公开(公告)日：2011-12-27
申请号：US12513903
申请日：2007-11-07
申请人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
发明人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/25 , H03H9/145
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/25
摘要： A surface acoustic wave resonator includes a piezoelectric substrate, a first surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate, and a second surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate. The first surface acoustic wave resonator and the second surface acoustic wave resonator are apodized and connected in parallel.
摘要翻译：表面声波谐振器包括压电基片，具有设置在压电基片上的梳状电极的第一声表面波谐振器和设置在压电基片上的梳状电极的第二声表面波谐振器。第一表面声波谐振器和第二声表面波谐振器被并口并联并联。

2. 发明申请

US20100060103A1 SURFACE ACOUSTIC WAVE RESONATOR 有权
标题翻译：表面声波谐振器
公开(公告)号：US20100060103A1
公开(公告)日：2010-03-11
申请号：US12513903
申请日：2007-11-07
申请人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
发明人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/205 , H01L41/047 , H01L41/08
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/25
摘要： A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (10), a first surface acoustic wave resonator (20) having a comb electrode (11) provided on the piezoelectric substrate (10), and a second surface acoustic wave resonator (30) having a comb electrode (12) provided on the piezoelectric substrate (10). The first surface acoustic wave resonator (20) and the second surface acoustic wave resonator (30) are apodized and connected in parallel.
摘要翻译：本发明的声表面波谐振器包括压电基片（10），具有设在压电基片（10）上的梳形电极（11）的第一表面声波谐振器（20）和第二表面声波谐振器 30），其具有设置在所述压电基板（10）上的梳状电极（12）。第一表面声波谐振器（20）和第二声表面波谐振器（30）被并口并联并联。

3. 发明申请

US20100194496A1 ELASTIC WAVE RESONATOR, ELASTIC WAVE FILTER, AND ANTENNA SHARING DEVICE USING THE SAME 有权
标题翻译：弹性波共振器，弹性波滤波器，以及使用其的天线共享装置
公开(公告)号：US20100194496A1
公开(公告)日：2010-08-05
申请号：US12757475
申请日：2010-04-09
申请人： Rei Goto , Yosuke Hamaoka , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara
发明人： Rei Goto , Yosuke Hamaoka , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara
IPC分类号： H01P5/12 , H03H9/17
CPC分类号： H03H9/6483 , H03H9/0071 , H03H9/02944 , H03H9/6496
摘要： An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.
摘要翻译：声波共振装置包括：压电基板（1），设置在压电基板（1）的上表面上并包括第一叉指式换能器电极（110）的第一声波谐振器（100）和设置在第二声波谐振器在压电基板（1）上并且包括第二叉指式换能器电极（210）。第一声波谐振器（100）和第二声波谐振器（200）彼此连接。形成第一声波谐振器（100）的多个第一梳状电极（112）的重叠宽度大于形成第二声波谐振器（200）的多个第二梳状电极（212）的重叠宽度。通过这样的配置，可以分配产生横向模式杂散响应的频率，并且可以减少损耗。

4. 发明授权

US08476991B2 Elastic wave resonator, elastic wave filter, and antenna sharing device using the same 有权
标题翻译：弹性波谐振器，弹性波滤波器和使用其的天线共享装置
公开(公告)号：US08476991B2
公开(公告)日：2013-07-02
申请号：US12757475
申请日：2010-04-09
申请人： Rei Goto , Yosuke Hamaoka , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara
发明人： Rei Goto , Yosuke Hamaoka , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara
IPC分类号： H03H9/54 , H03H9/64
CPC分类号： H03H9/6483 , H03H9/0071 , H03H9/02944 , H03H9/6496
摘要： An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.
摘要翻译：声波共振装置包括：压电基板（1），设置在压电基板（1）的上表面上并包括第一叉指式换能器电极（110）的第一声波谐振器（100）和设置在第二声波谐振器在压电基板（1）上并且包括第二叉指式换能器电极（210）。第一声波谐振器（100）和第二声波谐振器（200）彼此连接。形成第一声波谐振器（100）的多个第一梳状电极（112）的重叠宽度大于形成第二声波谐振器（200）的多个第二梳状电极（212）的重叠宽度。通过这样的配置，可以分配产生横向模式杂散响应的频率，并且可以减少损耗。

5. 发明授权

US07982365B2 Elastic wave device and filter and electronic equipment using the device 有权
标题翻译：弹性波装置及滤波器及电子设备采用该装置
公开(公告)号：US07982365B2
公开(公告)日：2011-07-19
申请号：US12428591
申请日：2009-04-23
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/08
CPC分类号： H03H9/0222
摘要： The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.
摘要翻译：本发明的弹性波装置具有压电基板; 设置在所述压电基板上的第一电介质层; 设置在所述第一电介质层上的第二电介质层; 以及在第二电介质层上的声层。确定第一和第二介电层的每个膜厚度提供有利的效果。也就是说，作为主波的SH波的能量被限制在压电基板和第一介电层之间的边界中，同时，SV波被抑制为不需要的波。该装置允许其位移分布类似于斯派利波波的SV波在第二介电层的上表面上具有位移分布并且被设置在第二介电层上的声层抑制。

6. 发明申请

US20130026881A1 ACOUSTIC WAVE ELEMENT 审中-公开
标题翻译：声波元件
公开(公告)号：US20130026881A1
公开(公告)日：2013-01-31
申请号：US13639119
申请日：2011-05-31
申请人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/047
CPC分类号： H03H9/14541 , H03H9/0222 , H03H9/02559
摘要： An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.
摘要翻译： IDT电极包括主要由设置在压电体上方的Mo形成的第一电极层和设置在第一电极层上方的主要由Al制成的第二电极层。 IDT电极的总厚度不大于0.15λ。第一电极层的厚度不小于0.05λ。第二电极层的厚度不小于0.025λ。

7. 发明申请

US20110133858A1 ELASTIC WAVE ELEMENT AND ELECTRONIC DEVICE USING THE SAME 审中-公开
标题翻译：使用它的弹性波元件和电子器件
公开(公告)号：US20110133858A1
公开(公告)日：2011-06-09
申请号：US13056813
申请日：2009-08-05
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/15 , H03H9/25
CPC分类号： H03H9/0222 , H03H9/02559 , H03H9/14541
摘要： An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on a piezoelectric device, a first dielectric layer disposed on the piezoelectric substrate such that it covers the IDT electrode, and a second dielectric layer disposed over the first dielectric layer. The second dielectric layer propagates transverse waves faster than that on the first dielectric layer. When a film thickness of the second dielectric layer is greater than a wave length of a major wave excited by the IDT electrode, a cut angle of the piezoelectric substrate in indication of Euler angles (φ, θ, Φ) is set to φ≠0°, θ≠0°, and Φ≠0°. This suppresses deterioration of device characteristics.
摘要翻译：弹性波装置包括压电基板，设置在压电装置上的IDT电极，设置在压电基板上以覆盖IDT电极的第一电介质层和设置在第一介电层上的第二电介质层。第二电介质层比第一电介质层上的横波更快地传播。当第二电介质层的膜厚度大于由IDT电极激发的主波的波长时，表示欧拉角（＆phgr;＆Theta;Φ）的压电基板的切割角被设定为＆phgr ;≠0°，＆thetas;≠0°，Φ≠0°。这抑制了器件特性的劣化。

8. 发明申请

US20110109196A1 PLATE WAVE ELEMENT AND ELECTRONIC EQUIPMENT USING SAME 有权
标题翻译：板波元件和使用相同的电子设备
公开(公告)号：US20110109196A1
公开(公告)日：2011-05-12
申请号：US12999369
申请日：2009-07-08
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/053
CPC分类号： H03H9/02559 , H03H9/02228 , H03H9/02574 , H03H9/02834
摘要： A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.
摘要翻译：平板波形元件包括压电体，设置在压电体的上表面上的梳状电极和设置在压电体的上表面上以覆盖梳状电极的介质层。梳状电极激发兰姆波作为主波。介质层具有与压电体相反的频率温度特性。板波元件具有优选的频率温度特性。

9. 发明授权

US08698578B2 Acoustic wave resonator and duplexer using same 有权
标题翻译：声波谐振器和双工器使用相同
公开(公告)号：US08698578B2
公开(公告)日：2014-04-15
申请号：US13319140
申请日：2010-05-24
申请人： Hidekazu Nakanishi , Hiroyuki Nakamura , Tetsuya Tsurunari , Rei Goto , Joji Fujiwara
发明人： Hidekazu Nakanishi , Hiroyuki Nakamura , Tetsuya Tsurunari , Rei Goto , Joji Fujiwara
IPC分类号： H03H9/00 , H03H9/64
CPC分类号： H03H9/6496 , H03H9/02559 , H03H9/02834 , H03H9/02858 , H03H9/02984 , H03H9/02992 , H03H9/1452 , H03H9/14526 , H03H9/1457 , H03H9/725
摘要： An acoustic wave resonator includes a piezoelectric body, an IDT electrode for exciting an acoustic wave with wavelength λ, and a dielectric thin film provided so as to cover the IDT electrode. The IDT electrode includes a bus bar electrode region, a dummy electrode region, and an IDT cross region in order from outside. The film thickness of the dielectric thin film above at least one of the bus bar electrode region and the dummy electrode region is smaller than that above the IDT cross region by 0.1λ to 0.25λ. This configuration provides an acoustic wave resonator that reduces transverse-mode spurious emission.
摘要翻译：声波谐振器包括压电体，用于激发波长为λ的声波的IDT电极和设置成覆盖IDT电极的电介质薄膜。 IDT电极从外部依次包括汇流条电极区域，虚拟电极区域和IDT交叉区域。汇流条电极区域和虚拟电极区域中的至少一个之上的电介质薄膜的膜厚小于IDT横截面上的0.1λ至0.25λ的厚度。该配置提供了减少横向杂散发射的声波谐振器。

10. 发明申请

US20100060102A1 ACOUSTIC WAVE DEVICE AND ELECTRONIC EQUIPMENT USING THE SAME 有权
标题翻译：声波设备和使用该设备的电子设备
公开(公告)号：US20100060102A1
公开(公告)日：2010-03-11
申请号：US12552606
申请日：2009-09-02
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/04
CPC分类号： H03H9/02897 , H03H9/0222 , H03H9/02559 , H03H9/02818
摘要： An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.
摘要翻译：声波装置具有：压电体; 布置在压电体上的叉指电极，激发声波; 以及布置在所述压电体上以覆盖所述叉指电极的电介质层。电介质层包括由横波传播速度向上连续增大的介质构成的组成变更部。利用这种配置，可以通过在介电层内部传播的高阶模式将杂散辐射移位到更高的频率，以便减少杂散辐射对高阶模式的影响。

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