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1. 发明申请

US20120240426A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120240426A1
公开(公告)日：2012-09-27
申请号：US13231956
申请日：2011-09-13
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
IPC分类号： F26B7/00 , F26B21/14
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译：根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中，在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力房间。预定温度不低于75℃，但低于醇的临界温度。

2. 发明申请

US20120118332A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120118332A1
公开(公告)日：2012-05-17
申请号：US13052232
申请日：2011-03-21
申请人： Yohei SATO , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
发明人： Yohei SATO , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
IPC分类号： B08B3/10 , B08B7/00
CPC分类号： H01L21/67034
摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要翻译：在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中用水溶性有机溶剂润湿。然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

3. 发明授权

US08709170B2 Supercritical drying method for semiconductor substrate 有权
标题翻译：半导体衬底的超临界干燥方法
公开(公告)号：US08709170B2
公开(公告)日：2014-04-29
申请号：US13052232
申请日：2011-03-21
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
IPC分类号： B08B7/00 , B08B7/04 , B08B3/00
CPC分类号： H01L21/67034
摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要翻译：在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中用水溶性有机溶剂润湿。然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

4. 发明申请

US20120186097A1 SUPERCRITICAL DRYING DEVICE AND METHOD 审中-公开
标题翻译：超临界干燥装置及方法
公开(公告)号：US20120186097A1
公开(公告)日：2012-07-26
申请号：US13160350
申请日：2011-06-14
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
IPC分类号： F26B3/00 , F26B25/06
CPC分类号： F26B3/00
摘要： Certain embodiments provide a supercritical drying device, comprising a sealable first vessel; a fluorine adsorbent provided inside the first vessel; a second vessel being provided inside the first vessel and housing a semiconductor substrate; a heater heating the inside of the first vessel; a pipe connected to the first vessel; and a valve provided on the pipe. Free fluorine generated by heating a fluorine containing solvent is adsorbed to the fluorine adsorbent.
摘要翻译：某些实施例提供了一种超临界干燥装置，包括可密封的第一容器; 设置在第一容器内的氟吸附剂; 第二容器设置在第一容器的内部并容纳半导体衬底; 加热器加热第一容器的内部; 连接到第一船的管道; 以及设置在管上的阀。通过加热含氟溶剂产生的游离氟吸附到氟吸附剂上。

5. 发明授权

US09437416B2 Supercritical drying method for semiconductor substrate 有权
标题翻译：半导体衬底的超临界干燥方法
公开(公告)号：US09437416B2
公开(公告)日：2016-09-06
申请号：US13231956
申请日：2011-09-13
申请人： Hidekazu Hayashi , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
发明人： Hidekazu Hayashi , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
IPC分类号： F26B3/00 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译：根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中，在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力房间。预定温度不低于75℃，但低于醇的临界温度。

6. 发明授权

US08372212B2 Supercritical drying method and apparatus for semiconductor substrates 有权
标题翻译：半导体衬底的超临界干燥方法和装置
公开(公告)号：US08372212B2
公开(公告)日：2013-02-12
申请号：US13369970
申请日：2012-02-09
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/04
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译：根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。房间包含SUS。对室的内壁面进行电解抛光。

7. 发明申请

US20110289793A1 SUPERCRITICAL DRYING METHOD 审中-公开
标题翻译：超临界干燥方法
公开(公告)号：US20110289793A1
公开(公告)日：2011-12-01
申请号：US12976593
申请日：2010-12-22
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
IPC分类号： F26B3/02 , B08B3/10
CPC分类号： F26B3/04 , H01L21/67034
摘要： According to one embodiment, a semiconductor substrate having a surface wetted with a chemical solution is introduced into a chamber, and a supercritical fluid is supplied into the chamber. The temperature in the chamber is adjusted to the critical temperature of the chemical solution or higher, so that the chemical solution is put into a supercritical state. The pressure in the chamber is then lowered, and the chemical solution in the critical state is turned into gaseous matter. The gaseous matter is then discharged from the chamber.
摘要翻译：根据一个实施例，将具有用化学溶液润湿的表面的半导体衬底引入室中，并将超临界流体供应到室中。将室内的温度调节至化学溶液的临界温度以上，使化学溶液处于超临界状态。然后降低室中的压力，将临界状态下的化学溶液变成气态物质。然后将气体从室排出。

8. 发明申请

US20110068480A1 SEMICONDUCTOR DEVICE AND ADHESIVE SHEET 有权
标题翻译：半导体器件和粘合片
公开(公告)号：US20110068480A1
公开(公告)日：2011-03-24
申请号：US12730007
申请日：2010-03-23
申请人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
发明人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
IPC分类号： H01L23/12 , C08K3/34 , C08L63/00 , C08K3/10
CPC分类号： C09J163/00 , C08K3/08 , C08K5/0091 , C08L63/00 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/732 , H01L2224/73265 , H01L2225/0651 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01051 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01088 , H01L2924/0665 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.
摘要翻译：本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

9. 发明授权

US08294282B2 Semiconductor device and adhesive sheet 有权
标题翻译：半导体器件和粘合片
公开(公告)号：US08294282B2
公开(公告)日：2012-10-23
申请号：US12730007
申请日：2010-03-23
申请人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
发明人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/28 , H01L23/22
CPC分类号： C09J163/00 , C08K3/08 , C08K5/0091 , C08L63/00 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/732 , H01L2224/73265 , H01L2225/0651 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01051 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01088 , H01L2924/0665 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.
摘要翻译：本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

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