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1. 发明授权

US06524893B2 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same 有权
公开(公告)号：US06524893B2
公开(公告)日：2003-02-25
申请号：US10002108
申请日：2001-12-05
申请人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
发明人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
IPC分类号： H01L21332
CPC分类号： H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L29/7412
摘要： An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.

2. 发明授权

US06696730B2 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same 有权
标题翻译：用于半导体集成电路的静电放电保护装置及其制造方法以及使用其的静电放电保护电路
公开(公告)号：US06696730B2
公开(公告)日：2004-02-24
申请号：US10003321
申请日：2001-12-06
申请人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
发明人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
IPC分类号： H01L2362
CPC分类号： H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L29/7412
摘要： An electrostatic discharge protection device is provided at an input or output of a semiconductor integrated circuit for protecting an internal circuit from an electrostatic surge flowing into or out of the integrated circuit. The electrostatic discharge protection device may include a thyristor, and a trigger diode for triggering the thyristor (e.g., with a low voltage). The trigger diode may include an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the cathode region from another silicide layer formed on a surface of the anode region.
摘要翻译：在半导体集成电路的输入或输出端设有静电放电保护装置，用于保护内部电路免受流入或流出集成电路的静电浪涌。静电放电保护装置可以包括晶闸管和用于触发晶闸管的触发二极管（例如，以低电压）。触发二极管可以包括n型阴极高杂质浓度区域; p型阳极杂质浓度高的区域; 以及用于将形成在阴极区域的表面上的硅化物层与形成在阳极区域的表面上的另一硅化物层电绝缘的绝缘体部分。

3. 发明授权

US06338986B1 Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same 有权
标题翻译：用于制造其的半导体集成电路方法的静电放电保护装置及使用其的静电放电保护电路
公开(公告)号：US06338986B1
公开(公告)日：2002-01-15
申请号：US09379108
申请日：1999-08-23
申请人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
发明人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
IPC分类号： H01L21332
CPC分类号： H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L29/7412
摘要： An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.
摘要翻译：根据本发明的静电放电保护装置设置在用于保护半导体集成电路的内部电路免受流入或流出半导体集成电路的静电浪涌的半导体集成电路的输入或输出。静电放电保护装置包括：晶闸管; 以及用于以低电压触发晶闸管的触发二极管。触发二极管包括：n型阴极高杂质浓度区域; p型阳极杂质浓度高的区域; 以及用于将形成在n型阴极高杂质浓度区域的表面上的硅化物层与形成在p型阳极高杂质浓度区域的表面上的另一硅化物层电绝缘的绝缘体部分。

4. 发明授权

US06597021B2 Protection circuit and semiconductor device 有权
公开(公告)号：US06597021B2
公开(公告)日：2003-07-22
申请号：US09984923
申请日：2001-10-31
申请人： Eiji Aoki , Hidechika Kawazoe
发明人： Eiji Aoki , Hidechika Kawazoe
IPC分类号： H01L2974
CPC分类号： H01L27/0251
摘要： A protection circuit for protecting a semiconductor device from being damaged due to an excessively high applied voltage, includes a P-type MOS transistor provided between an external input-output terminal and a power supply line, an N-type MOS transistor provided between the P-type MOS transistor and a ground line, a first thyristor provided between the external input-output terminal and the ground line, the anode portion being connected to the external input-output terminal side, and the cathode portion being connected to the ground line, a second thyristor provided between the power supply line and the ground line, the anode portion being connected to the power supply line, and the cathode portion being connected to the ground line, and a resistance portion provided at a predetermined location of a conductor extending from a branch node between the P-type and N-type MOS transistors to the power supply line via the P-type MOS transistor.

5. 发明授权

US08641441B2 Connector 有权
标题翻译：连接器
公开(公告)号：US08641441B2
公开(公告)日：2014-02-04
申请号：US13497548
申请日：2011-06-13
申请人： Eiji Aoki , Motoo Nojima
发明人： Eiji Aoki , Motoo Nojima
IPC分类号： H01R13/40
CPC分类号： H01R13/415 , H01R11/12 , H01R13/5205 , H01R2103/00
摘要： A connector includes a housing, a cavity formed in the housing, a terminal to which a cable is connected and which is inserted into the cavity from a rear end side of the housing, and a nut held at a front end portion of the housing, wherein the terminal has a plate-like connection portion extended in an insertion direction to the cavity and an insertion hole formed in the connection portion, and the connection portion, which is inserted into the cavity and protruded from a front end portion of the housing, is bent and arranged along a front end surface of the housing, whereby the insertion hole is communicated with an internal thread of the nut.
摘要翻译：连接器包括壳体，形成在壳体中的空腔，连接有电缆的端子，并且其从壳体的后端侧插入到空腔中，以及保持在壳体的前端部分的螺母，其特征在于，所述端子具有沿着所述空腔的插入方向延伸的板状连接部和形成在所述连接部中的插入孔，所述连接部插入所述空腔并从所述壳体的前端部突出，沿着壳体的前端面弯曲并配置，由此插入孔与螺母的内螺纹连通。

6. 发明申请

US20120094537A1 CONNECTOR 有权
标题翻译：连接器
公开(公告)号：US20120094537A1
公开(公告)日：2012-04-19
申请号：US13379718
申请日：2011-04-12
申请人： Eiji Aoki , Motoo Nojima , Taro Mizuino
发明人： Eiji Aoki , Motoo Nojima , Taro Mizuino
IPC分类号： H01R13/68
CPC分类号： H01R13/688 , H01R13/5219 , H01R13/74
摘要： It is an object to provide a connector to which a fuse can be detachably attached and that can reduce components or improve reliability and improve a shield performance. The connector includes first and second bus bars 11 and 21, a fuse 31 that electrically conducts and connects the first and second bus bars 11 and 21 to each other so as to be fused and a housing 41 that accommodates the first and second bus bars 11 and 21 and the fuse 31. The first and second bus bars 21 include tabs 12 and 22 for a device inserted into the device 3 and connected to a circuit in the device 3. The housing 41 has a hood part 43 that covers the peripheries of the tabs 12 and 22 for the device and is fitted to a connector attaching hole 6 of the device 3 and the fuse 31 is attached to an accommodating space 45 in the hood part 43.
摘要翻译：本发明的目的是提供一种可拆卸地连接熔丝的连接器，并且可以减少部件或提高可靠性并提高屏蔽性能。连接器包括第一和第二母线11和21，将第一和第二汇流条11和21相互导电和连接以便熔化的保险丝31和容纳第一和第二母线11的壳体41 第一和第二汇流条21包括用于插入到装置3中并连接到装置3中的电路的装置的突片12和22.壳体41具有覆盖外围的罩部43 用于装置的突片12和22并且装配到装置3的连接器连接孔6，并且保险丝31附接到罩部43中的容纳空间45。

7. 发明授权

US07907263B2 Apparatuses and methods using measurement of a flare generated in an optical system 失效
标题翻译：使用在光学系统中产生的耀斑的测量的装置和方法
公开(公告)号：US07907263B2
公开(公告)日：2011-03-15
申请号：US12493229
申请日：2009-06-28
申请人： Michiko Aizawa , Eiji Aoki , Osamu Kakuchi , Yoshiyuki Kuramoto
发明人： Michiko Aizawa , Eiji Aoki , Osamu Kakuchi , Yoshiyuki Kuramoto
IPC分类号： G01B9/00 , G01B9/02 , G01B11/02
CPC分类号： G03F7/7085 , G03F7/705 , G03F7/70525 , G03F7/706 , G03F7/70941
摘要： The present invention provides a method including measuring a wavefront aberration of the optical system to be measured on a measurement surface, measuring a pupil transmittance distribution of the optical system determining a pupil function of the optical system based on the wavefront aberration and the pupil transmittance distribution, and performing imaging computation using the pupil function to obtain a light intensity distribution formed on an image plane of the optical system, and calculating a flare, generated in the optical system, from the light intensity distribution.
摘要翻译：本发明提供了一种方法，包括测量测量表面上要测量的光学系统的波前像差，测量基于波前像差和光瞳透射率分布来确定光学系统的光瞳功能的光学系统的光瞳透射率分布并且使用光瞳函数进行成像计算，以获得形成在光学系统的像面上的光强度分布，以及根据光强度分布计算在光学系统中产生的耀斑。

8. 发明授权

US07037627B2 Photomask defect testing method, photomask manufacturing method and semiconductor integrated circuit manufacturing method 有权
标题翻译：光掩模缺陷测试方法，光掩模制造方法和半导体集成电路制造方法
公开(公告)号：US07037627B2
公开(公告)日：2006-05-02
申请号：US10689666
申请日：2003-10-22
申请人： Eiji Aoki , Shinji Kobayashi , Toshiyuki Marumo , Shinji Akima
发明人： Eiji Aoki , Shinji Kobayashi , Toshiyuki Marumo , Shinji Akima
IPC分类号： G01F9/00
CPC分类号： G03F1/84 , G03F7/70433
摘要： The present invention provides a photomask defect testing method, a photomask manufacturing method and a semiconductor integrated circuit manufacturing method. In the photomask defect testing method, reference data is created from corrected photomask design data that is corrected on the basis of an exposure transfer pattern, and sensor data is created by measuring the shape of the photomask based on the corrected photomask design data. Furthermore, first non-testing region data indicating non-testing regions including pattern portions having a predetermined width or less and pattern spaces having a predetermined value or less is extracted from the corrected photomask design data, the extracted first non-testing region data is stored so as to be included in the corrected photomask design data, the non-testing regions indicated by the first non-testing region data is excluded, and the reference data is compared with the sensor data, whereby defects on the photomask are detected.
摘要翻译：本发明提供光掩模缺陷测试方法，光掩模制造方法和半导体集成电路制造方法。在光掩模缺陷测试方法中，基于根据曝光转印图案校正的校正光掩模设计数据创建参考数据，并且通过基于校正的光掩模设计数据测量光掩模的形状来创建传感器数据。此外，从校正后的光掩模设计数据中提取表示包含具有预定宽度或更小的图案部分的非测试区域的第一非测试区域数据和具有预定值或更小的图案空间，存储所提取的第一非测试区域数据为了被包括在校正光掩模设计数据中，排除由第一非测试区域数据指示的非测试区域，并将参考数据与传感器数据进行比较，由此检测光掩模上的缺陷。

9. 发明授权

US08425256B2 Connector 有权
标题翻译：连接器
公开(公告)号：US08425256B2
公开(公告)日：2013-04-23
申请号：US13379718
申请日：2011-04-12
申请人： Eiji Aoki , Motoo Nojima , Taro Mizuno
发明人： Eiji Aoki , Motoo Nojima , Taro Mizuno
IPC分类号： H01R13/648
CPC分类号： H01R13/688 , H01R13/5219 , H01R13/74
摘要： It is an object to provide a connector to which a fuse can be detachably attached and that can reduce components or improve reliability and improve a shield performance. The connector includes first and second bus bars 11 and 21, a fuse 31 that electrically conducts and connects the first and second bus bars 11 and 21 to each other so as to be fused and a housing 41 that accommodates the first and second bus bars 11 and 21 and the fuse 31. The first and second bus bars 21 include tabs 12 and 22 for a device inserted into the device 3 and connected to a circuit in the device 3. The housing 41 has a hood part 43 that covers the peripheries of the tabs 12 and 22 for the device and is fitted to a connector attaching hole 6 of the device 3 and the fuse 31 is attached to an accommodating space 45 in the hood part 43.
摘要翻译：本发明的目的是提供一种可拆卸地连接熔丝的连接器，并且可以减少部件或提高可靠性并提高屏蔽性能。连接器包括第一和第二母线11和21，将第一和第二汇流条11和21相互导电和连接以便熔化的保险丝31和容纳第一和第二母线11的壳体41 第一和第二汇流条21包括用于插入到装置3中并连接到装置3中的电路的装置的突片12和22.壳体41具有覆盖外围的罩部43 用于装置的突片12和22并且装配到装置3的连接器连接孔6，并且保险丝31附接到罩部43中的容纳空间45。

10. 发明授权

US08393911B2 Water seal plug and connector with the water seal plug 有权
标题翻译：水封插头和连接器带水封塞
公开(公告)号：US08393911B2
公开(公告)日：2013-03-12
申请号：US13260196
申请日：2010-04-30
申请人： Eiji Aoki , Tomokazu Yamane , Yosuke Inoue
发明人： Eiji Aoki , Tomokazu Yamane , Yosuke Inoue
IPC分类号： H01R13/52
CPC分类号： H01R13/5205 , H01R11/12 , H01R13/4367
摘要： A connector 10 includes a terminal 5 having an electric connecting portion 52 connected with a mating member 9 at one end of the terminal 5 so as to be placed on the mating member 9 and fastened by a bolt 11 and a nut 12 and a wire connecting portion 55 joined with a terminal end of the electric wire 6 at the other end of the terminal 5, and a connector housing 4 having a terminal receiving section 41, and a water seal plug 1 arranged around the electric wire 6 to seal watertightly the terminal receiving section 41. The water seal plug 1 includes integrally a rubber water seal member 3 and a resin member 2 made of synthetic resin. The water seal member 3 includes a cylindrical main body 30 and an outer lip 31 abutting on an inner surface of the terminal receiving section 41, and a plurality of inner lips 32a, 32b, 32c abutting on an outer surface of the electric wire 6. A first inner lip 32a at the nearest position to the terminal 5 is formed to have a lower projecting height then that of the second inner lip 32b and the third inner lip 32c.
摘要翻译：连接器10包括端子5，端子5具有与端子5一端的配合件9连接的电连接部分52，以便被放置在配合件9上并由螺栓11和螺母12连接与终端5的另一端的电线6的末端连接的部分55，以及具有端子接收部41的连接器壳体4和布置在电线6周围的水密封塞1，以密封地密封端子水封塞1一体地包括橡胶水封构件3和由合成树脂制成的树脂构件2。水封构件3包括圆柱形主体30和邻接在端子容纳部41的内表面上的外唇缘31和与电线6的外表面邻接的多个内唇32a，32b，32c。在与端子5最靠近的位置处的第一内唇32a形成为具有比第二内唇32b和第三内唇32c的突出高度更低的突出高度。

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