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1. 发明授权

US08672563B2 Development method, method of manufacturing photomask, method of manufacturing semiconductor device and development device 失效
标题翻译：开发方法，制造光掩模的方法，制造半导体器件的方法和开发装置
公开(公告)号：US08672563B2
公开(公告)日：2014-03-18
申请号：US13137302
申请日：2011-08-04
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03B13/00 , G03D5/00
CPC分类号： G03F7/30 , G03F1/00 , G03F7/3028
摘要： A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of the photosensitive film from a film thickness reduction of the photosensitive film developed by the first development process and the exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of the pattern dimension after the development process between the multiple types of patterns and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges.
摘要翻译：根据实施方案的显影方法包括以预定曝光量曝光形成在基板上的感光膜，进行在预定的第一显影条件下显影曝光的感光膜以便使感光膜离开的第一显影处理，获得通过第一显影处理显影的感光性膜的膜厚减少和曝光量的感光性膜的感光度信息，预测在第一显影处理后进行第二显影处理时将形成的多种图案的图案尺寸根据灵敏度信息，并且确定第二显影处理中的显影条件的第一可接受范围，从第一可接受范围和第二显影处理之后的图案尺寸的变化量确定第二显影处理中的显影条件的第二可接受范围多种类型的图案之间的显影处理，并且在第二显影处理中确定第二显影条件，以便满足第一和第二可接受范围。

2. 发明申请

US20110293305A1 Development method, method of manufacturing photomask, method of manufacturing semiconductor device and development device 失效
标题翻译：开发方法，制造光掩模的方法，制造半导体器件的方法和开发装置
公开(公告)号：US20110293305A1
公开(公告)日：2011-12-01
申请号：US13137302
申请日：2011-08-04
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03G15/08
CPC分类号： G03F7/30 , G03F1/00 , G03F7/3028
摘要： A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of the photosensitive film from a film thickness reduction of the photosensitive film developed by the first development process and the exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of the pattern dimension after the development process between the multiple types of patterns and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges.
摘要翻译：根据实施方案的显影方法包括以预定曝光量曝光形成在基板上的感光膜，进行在预定的第一显影条件下显影曝光的感光膜以便使感光膜离开的第一显影处理，获得通过第一显影处理显影的感光性膜的膜厚减少和曝光量的感光性膜的感光度信息，预测在第一显影处理后进行第二显影处理时将形成的多种图案的图案尺寸根据灵敏度信息，并且确定第二显影处理中的显影条件的第一可接受范围，从第一可接受范围和第二显影处理之后的图案尺寸的变化量确定第二显影处理中的显影条件的第二可接受范围多种类型的图案之间的显影处理，并且在第二显影处理中确定第二显影条件，以便满足第一和第二可接受范围。

3. 发明申请

US20100129737A1 DEVELOPMENT METHOD, METHOD OF MANUFACTURING PHOTOMASK, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND DEVELOPMENT DEVICE 有权
标题翻译：开发方法，制造光电二极管的方法，制造半导体器件和开发器件的方法
公开(公告)号：US20100129737A1
公开(公告)日：2010-05-27
申请号：US12559735
申请日：2009-09-15
申请人： Hideaki SAKURAI , Masatoshi Terayama
发明人： Hideaki SAKURAI , Masatoshi Terayama
IPC分类号： G03F1/00 , G03C5/00 , H01L21/00
CPC分类号： G03F7/30 , G03F1/00 , G03F7/3028
摘要： A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of the photosensitive film from a film thickness reduction of the photosensitive film developed by the first development process and the exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of the pattern dimension after the development process between the multiple types of patterns and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges.
摘要翻译：根据实施方案的显影方法包括以预定曝光量曝光形成在基板上的感光膜，进行在预定的第一显影条件下显影曝光的感光膜以便使感光膜离开的第一显影处理，获得通过第一显影处理显影的感光性膜的膜厚减少和曝光量的感光性膜的感光度信息，预测在第一显影处理后进行第二显影处理时将形成的多种图案的图案尺寸根据灵敏度信息，并且确定第二显影处理中的显影条件的第一可接受范围，从第一可接受范围和第二显影处理之后的图案尺寸的变化量确定第二显影处理中的显影条件的第二可接受范围多种类型的图案之间的显影处理，并且在第二显影处理中确定第二显影条件，以便满足第一和第二可接受范围。

4. 发明申请

US20130059241A1 DEVELOPMENT PROCESSING METHOD AND DEVELOPMENT PROCESSING APPARATUS 审中-公开
标题翻译：发展处理方法和开发处理装置
公开(公告)号：US20130059241A1
公开(公告)日：2013-03-07
申请号：US13584954
申请日：2012-08-14
申请人： Hideaki SAKURAI , Masatoshi Terayama
发明人： Hideaki SAKURAI , Masatoshi Terayama
IPC分类号： G03F7/30 , G03B27/52
CPC分类号： G03F7/30
摘要： According to one embodiment, a monitor pattern is previously exposed together with a device pattern on a resist film, the monitor pattern is developed in a first development condition and a fault occurrence risk is quantified based on a check image. At this time, the range of a second development condition in which the number of faults becomes less than or equal to a permissible value with respect to the quantified fault occurrence risk is determined based on the relationship between fault occurrence risk information and the number of faults. Then, a third development condition in which the pattern dimension becomes a desired value in the second development condition is determined and the device pattern is developed in the thus determined third development condition.
摘要翻译：根据一个实施例，监视器图案预先与抗蚀剂膜上的器件图案一起暴露，监视器图案在第一显影条件下显影，并且基于检查图像量化故障发生风险。此时，根据故障发生风险信息与故障次数之间的关系确定故障数量变得小于或等于相对于量化的故障发生风险的允许值的第二开发条件的范围。然后，确定在第二显影条件下图案尺寸成为期望值的第三显影条件，并且在如此确定的第三显影条件下显影装置图案。

5. 发明授权

US08383298B2 Substrate processing method, manufacturing method of EUV mask, and EUV mask 有权
标题翻译：基板处理方法，EUV掩模的制造方法和EUV掩模
公开(公告)号：US08383298B2
公开(公告)日：2013-02-26
申请号：US13034143
申请日：2011-02-24
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03F1/50 , G03F1/60
CPC分类号： G03F7/70058 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/38
摘要： According to the substrate processing method in the embodiments, as a mask substrate used for forming an EUV mask, a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface is exposed from a side of the resist. Then, a hydrophilic treatment is performed on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity. Then, a development treatment of the resist is performed with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
摘要翻译：根据实施方式的基板处理方法，作为用于形成EUV掩模的掩模基板，将在一个主面上形成有具有第一亲水性的第一膜并且将抗蚀剂施加到另一主表面的掩模基板露出从抗蚀剂的一侧。然后，对第一膜的表面进行亲水处理，使第一膜的表面具有比第一亲水性大的第二亲水性。然后，相对于对第一膜的表面进行亲水处理的掩模基板进行抗蚀剂的显影处理以具有第二亲水性。

6. 发明授权

US08017287B2 Development method, method of manufacturing photomask, and method of manufacturing semiconductor device 有权
标题翻译：开发方法，制造光掩模的方法以及制造半导体器件的方法
公开(公告)号：US08017287B2
公开(公告)日：2011-09-13
申请号：US12559735
申请日：2009-09-15
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03F1/00 , G03F7/30 , G03F7/40
CPC分类号： G03F7/30 , G03F1/00 , G03F7/3028
摘要： A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of an unexposed photosensitive film on the substrate from a film thickness reduction of the photosensitive film developed by the first development process and the predetermined exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of pattern dimensions between the multiple types of patterns after the second development process and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges. The development method is used for forming a mask pattern on a photomask, which is then used for patterning a wafer in the manufacturing of a semiconductor device.
摘要翻译：根据实施方案的显影方法包括以预定曝光量曝光形成在基板上的感光膜，进行在预定的第一显影条件下显影曝光的感光膜以便使感光膜离开的第一显影处理，获得通过第一显影处理显影的感光性膜的膜厚减少和预定的曝光量，预测基板上未曝光的感光膜的感光度信息，预测在进行第二显影处理时将形成的多种图案的图案尺寸在从所述灵敏度信息进行的第一开发过程之后，并且确定所述第二开发过程中的开发条件的第一可接受范围，从所述第一可接受范围和变化中确定所述第二开发过程中的所述开发条件的第二可接受范围在第二显影处理之后，在多种类型的图案之间绘制图案尺寸，并确定第二显影处理中的第二显影条件以便满足第一和第二可接受范围。显影方法用于在光掩模上形成掩模图案，然后将其用于制造半导体器件中的晶片图案化。

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