专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06399489B1 Barrier layer deposition using HDP-CVD 有权
标题翻译：使用HDP-CVD进行阻挡层沉积
公开(公告)号：US06399489B1
公开(公告)日：2002-06-04
申请号：US09431411
申请日：1999-11-01
申请人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
发明人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
IPC分类号： C23C16/50 , C23C16/32 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/44
CPC分类号： C23C16/325 , H01L21/314 , H01L21/3146 , Y10S438/931
摘要： A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.
摘要翻译：使用包含含烃气体和含硅气体的气体混合物在衬底上沉积诸如阻挡层的膜的方法。合适的含烃气体包括烷烃如甲烷（CH4），乙烷（C2H6），丁烷（C3H8），丙烷（C4H10）等。合适的含硅气体包括硅烷如硅烷（SiH 4）。该方法通常包括向腔室提供合适的气体混合物，从气体混合物产生等离子体，以及使用等离子体将膜沉积到衬底上。在优选的实施方案中，膜以高密度等离子体化学气相沉积（HDP-CVD）系统沉积。气态混合物通常包括含硅气体，例如烷烃，和含烃气体，例如硅烷。本发明方法的实施方案可以具有总体介电常数为约4.0或更小的堆叠结构。这种结构可以包括介电常数为4.5或更小的阻挡层。

2. 发明授权

US06713390B2 Barrier layer deposition using HDP-CVD 失效
标题翻译：使用HDP-CVD进行阻挡层沉积
公开(公告)号：US06713390B2
公开(公告)日：2004-03-30
申请号：US10194398
申请日：2002-07-12
申请人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
发明人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
IPC分类号： H01L2144
CPC分类号： C23C16/325 , H01L21/314 , H01L21/3146 , Y10S438/931
摘要： A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
摘要翻译：提供了一种使用包括含烃气体和含硅气体的气体混合物在基板上沉积阻挡层的方法。将气体混合物提供到处理室，并用于形成用于沉积阻挡层的等离子体。阻挡层以小于500埃的厚度沉积。合适的含烃气体包括烷烃，合适的含硅气体包括硅烷。

3. 发明授权

US06926926B2 Silicon carbide deposited by high density plasma chemical-vapor deposition with bias 失效
标题翻译：通过高密度等离子体化学气相沉积法沉积碳化硅
公开(公告)号：US06926926B2
公开(公告)日：2005-08-09
申请号：US09953685
申请日：2001-09-10
申请人： Seon-Mee Cho , Hichem M'Saad , Farhad Moghadam
发明人： Seon-Mee Cho , Hichem M'Saad , Farhad Moghadam
IPC分类号： C23C16/32 , C23C16/507 , H01L21/314 , C23C16/30
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/507 , H01L21/02274 , H01L21/314
摘要： A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
摘要翻译：将SiC基层沉积在具有约1和100Ωcm之间的电阻率的基底上。基板设置在处理室中。具有含硅气体和含烃气体的气体混合物流入处理室。从等离子体产生具有大于约10 11 /离子/ cm 3的离子密度的高密度等离子体。将大约0.65和1.30W / cm 2之间的小的电偏压施加到基底上。低偏压补偿了当沉积SiC基层时产生意外的冷却，但是足够低以使氢的注入最小化。

4. 发明授权

US06410457B1 Method for improving barrier layer adhesion to HDP-FSG thin films 有权
标题翻译：改善与HDP-FSG薄膜的隔离层粘附性的方法
公开(公告)号：US06410457B1
公开(公告)日：2002-06-25
申请号：US09569744
申请日：2000-05-11
申请人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
发明人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

5. 发明授权

US06803325B2 Apparatus for improving barrier layer adhesion to HDP-FSG thin films 失效
标题翻译：用于改善与HDP-FSG薄膜的屏障层粘附性的装置
公开(公告)号：US06803325B2
公开(公告)日：2004-10-12
申请号：US10120713
申请日：2002-04-10
申请人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
发明人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

6. 发明授权

US08382885B2 Fluid filtration for substrate processing chamber 失效
标题翻译：衬底处理室的流体过滤
公开(公告)号：US08382885B2
公开(公告)日：2013-02-26
申请号：US12914822
申请日：2010-10-28
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Hichem M'Saad
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Hichem M'Saad
IPC分类号： B01D53/02
CPC分类号： C23C16/4402 , C23C16/4481 , C23C16/52
摘要： A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.
摘要翻译：用于过滤衬底处理设备中的流体的过滤器包括彼此连接的第一和第二阶段。输送系统向过滤器提供蒸发的液体。过滤器的第一阶段包括碱性化合物，并且过滤器的第二阶段包括干燥剂。第二过滤器包括具有可渗透膜的渗透过滤器以过滤流体。还描述了使用过滤器过滤流体以减少不期望的工艺残余物的形成的方法。

7. 发明授权

US08138104B2 Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure 有权
标题翻译：使用氮等离子体原位处理和非原位UV固化来增加氮化硅拉伸应力的方法
公开(公告)号：US08138104B2
公开(公告)日：2012-03-20
申请号：US11762590
申请日：2007-06-13
申请人： Mihaela Balseanu , Victor Nguyen , Li-Qun Xia , Derek R. Witty , Hichem M'Saad , Mei-Yee Shek , Isabelita Roflox
发明人： Mihaela Balseanu , Victor Nguyen , Li-Qun Xia , Derek R. Witty , Hichem M'Saad , Mei-Yee Shek , Isabelita Roflox
IPC分类号： H01L21/469
CPC分类号： H01L21/3105 , C23C16/345 , C23C16/56 , H01L21/31111 , H01L21/31116 , H01L21/3185 , H01L21/823807 , H01L29/66583 , H01L29/7843
摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.
摘要翻译：氮化硅层的应力可以通过在较高温度下沉积来增强。使用允许将衬底加热到基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能设备。根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

8. 发明授权

US07851384B2 Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film 失效
标题翻译：通过使用双层膜来减轻UV和电子束暴露对半导体器件膜性质的影响的方法
公开(公告)号：US07851384B2
公开(公告)日：2010-12-14
申请号：US11751516
申请日：2007-05-21
申请人： Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'Saad
发明人： Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02167 , H01L21/02304 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31144 , H01L21/3148 , H01L21/7681 , H01L21/76825 , H01L21/76832
摘要： Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.
摘要翻译：提供了用于处理其上包含双层阻挡膜的基材的方法。一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及紫外线固化电介质层。在另一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及使介电层用电子束处理。

9. 发明授权

US07718081B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes 失效
标题翻译：使用无定形碳（APF）进行各种蚀刻和光刻积分方案的技术
公开(公告)号：US07718081B2
公开(公告)日：2010-05-18
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
发明人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

10. 发明申请

US20090104764A1 Methods and Systems for Forming at Least One Dielectric Layer 有权
标题翻译：用于形成最少一层电介质层的方法和系统
公开(公告)号：US20090104764A1
公开(公告)日：2009-04-23
申请号：US11876649
申请日：2007-10-22
申请人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/3205 , C23F1/00 , H01L21/311
CPC分类号： H01L21/3185 , H01L21/31116 , H01L21/3143 , H01L21/76829 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
摘要翻译：一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。在至少一个特征上形成含氮介电层。在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上以第二速率被去除。第一个比率大于第二个比率。在含氮介电层上形成介电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式