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1. 发明申请

US20100129535A1 Vapor Deposition Processes for Tantalum Carbide Nitride Materials 失效
标题翻译：钽硬质合金材料的气相沉积工艺
公开(公告)号：US20100129535A1
公开(公告)日：2010-05-27
申请号：US12699271
申请日：2010-02-03
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： B05D5/12
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

2. 发明申请

US20090269930A1 THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE 失效
标题翻译：用于防止暴露于大气中的氧化铝表面缺陷的热退火方法
公开(公告)号：US20090269930A1
公开(公告)日：2009-10-29
申请号：US12173279
申请日：2008-07-15
申请人： Haichun Yang , Chien-Teh Kao , Xinliang Lu , Mei Chang
发明人： Haichun Yang , Chien-Teh Kao , Xinliang Lu , Mei Chang
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.
摘要翻译：用于防止在使用氟和氢化学的蚀刻或硅清洁步骤之后形成某些BPSG表面缺陷的热退火工艺。在保护晶片免受湿气的同时，通过将晶片加热到足够高的温度持续足够的时间以将从掺杂的玻璃层表面附近的硅分离的硼和/或磷材料热扩散到热，从而进行热退火处理，以将硼和/或磷材料热扩散到大部分的层。通过将晶片冷却到足够低的温度以固定硼和/或磷材料在掺杂的玻璃层的大部分中的分布来完成热退火工艺。

3. 发明申请

US20090081868A1 VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS 有权
标题翻译：碳酸氮化物材料的蒸气沉积工艺
公开(公告)号：US20090081868A1
公开(公告)日：2009-03-26
申请号：US11860945
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01L21/28556 , H01L21/28562
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

4. 发明授权

US07780793B2 Passivation layer formation by plasma clean process to reduce native oxide growth 有权
标题翻译：通过等离子体清洁工艺形成钝化层以减少自然氧化物生长
公开(公告)号：US07780793B2
公开(公告)日：2010-08-24
申请号：US11962791
申请日：2007-12-21
申请人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： B08B6/00
CPC分类号： H01L21/02068 , H01L21/31116 , H01L21/76224 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
摘要翻译：本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体使得气体混合物含有NH 3 / NF 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基材上。含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。该方法还包括在处理室内加热衬底至约100℃或更高的第二温度，同时从衬底上移除薄膜并在其上形成钝化表面。

5. 发明授权

US07678298B2 Tantalum carbide nitride materials by vapor deposition processes 有权
标题翻译：通过气相沉积工艺生产氮化钽材料
公开(公告)号：US07678298B2
公开(公告)日：2010-03-16
申请号：US11860952
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
摘要翻译：本发明的实施方案通常提供碳化钽氮化物材料的组合物。在一个实施方案中，提供了包含化学式TaC x N y的化合物碳氮化物材料的组合物，其中x在约0.20至约0.50的范围内，y在约0.20至约0.55的范围内，间隙/ 元素碳原子比为约2或更大，以及晶体结构。在一些实例中，组合物提供x在约0.25至约0.40，优选约0.30至约0.40的范围内，y在约0.30至约0.50，优选约0.35至约0.50的范围内。间隙/元素碳原子比可以是约3，约4或更大。该组合物还可以具有在约1×10 4Ω·cm-1至约1×10 6Ω·cm·cm 2的范围内的薄层电阻。

6. 发明申请

US20090269934A1 PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE 失效
标题翻译：用于防止暴露于大气中的氧化铝表面缺陷的等离子体处理方法
公开(公告)号：US20090269934A1
公开(公告)日：2009-10-29
申请号：US12173331
申请日：2008-07-15
申请人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
发明人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
IPC分类号： H01L21/302
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
摘要翻译：通过等离子体处理方法防止在暴露于大气中形成BPSG表面缺陷，用于将从掺杂玻璃层表面附近的硅分离的硼和/或磷材料转化为气相化合物。处理等离子体由含有（a）氟化合物或（b）氢化合物的处理气体产生。

7. 发明授权

US07585762B2 Vapor deposition processes for tantalum carbide nitride materials 有权
标题翻译：碳化钽氮化物材料的气相沉积工艺
公开(公告)号：US07585762B2
公开(公告)日：2009-09-08
申请号：US11860945
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01L21/28556 , H01L21/28562
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

8. 发明申请

US20090104782A1 SELECTIVE ETCHING OF SILICON NITRIDE 失效
标题翻译：硅酸盐的选择性蚀刻
公开(公告)号：US20090104782A1
公开(公告)日：2009-04-23
申请号：US12247059
申请日：2008-10-07
申请人： XINLAING LU , Haichun Yang , Zhenbin Ge , Nan Lu , David T. Or , Chien-Teh Kao , Mei Chang
发明人： XINLAING LU , Haichun Yang , Zhenbin Ge , Nan Lu , David T. Or , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.
摘要翻译：本文提供了用于蚀刻包含硅和氮的电介质层的方法。在一些实施例中，这样的方法可以包括提供具有介于其上的硅和氮的电介质层的衬底，使用远程等离子体从包含氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻介电层。在一些实施例中，氧化物层邻近电介质层设置。在一些实施方案中，可以调节处理气体的流速比，使得介电层与氧化物层或基底中的至少一个的蚀刻选择性在约0.8至约4之间。

9. 发明授权

US07871926B2 Methods and systems for forming at least one dielectric layer 有权
标题翻译：用于形成至少一个电介质层的方法和系统
公开(公告)号：US07871926B2
公开(公告)日：2011-01-18
申请号：US11876649
申请日：2007-10-22
申请人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/3185 , H01L21/31116 , H01L21/3143 , H01L21/76829 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
摘要翻译：一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。在至少一个特征上形成含氮介电层。在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上以第二速率被去除。第一个比率大于第二个比率。在含氮介电层上形成介电层。

10. 发明申请

US20090191703A1 PROCESS WITH SATURATION AT LOW ETCH AMOUNT FOR HIGH CONTACT BOTTOM CLEANING EFFICIENCY FOR CHEMICAL DRY CLEAN PROCESS 审中-公开
标题翻译：用于化学干洗过程的高接触底部清洁效率的低刻度处理
公开(公告)号：US20090191703A1
公开(公告)日：2009-07-30
申请号：US12021844
申请日：2008-01-29
申请人： Xinliang Lu , Haichun Yang , Zhenbin Ge , Chien-Teh Kao , Mei Chang
发明人： Xinliang Lu , Haichun Yang , Zhenbin Ge , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/28518 , H01L21/02063 , H01L21/76814 , H01L29/665 , H01L29/78
摘要： A method for removing oxides from the bottom surface of a contact hole is provided. The method provides efficient cleaning of the bottom surface without distortion of the contact hole upper and sidewall surfaces.
摘要翻译：提供了从接触孔的底面除去氧化物的方法。该方法提供对底面的有效清洁，而不会使接触孔上侧壁和侧壁表面变形。

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