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    • 8. 发明申请
    • TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    • TFT阵列基板及其制造方法
    • US20120161140A1
    • 2012-06-28
    • US13332689
    • 2011-12-21
    • Hailin XUEYubo XUCheng LIJidong ZHANG
    • Hailin XUEYubo XUCheng LIJidong ZHANG
    • H01L33/08H01L33/62
    • G02F1/136286G02F2201/121H01L27/124
    • An thin film transistor array and a manufacturing method thereof are provided. A thin film transistor (TFT) array substrate comprises a base substrate, horizontal gate lines, reticulated storage capacitor electrode (Vcom) lines, longitudinal data lines defining pixel units with the horizontal gate lines. The Vcom lines corresponding to the pixel units in each row of the reticulated Vcom line are connected with each other, and the reticulated Vcom lines are connected with an integrated-circuit (IC) element through Vcom line IC terminals; if the number of the data lines is N, the number of the Vcom line IC terminals is more than 0 and less than N+1; and at least one Vcom line longitudinal electric connection section is provided between the Vcom lines in two adjacent rows.
    • 提供薄膜晶体管阵列及其制造方法。 薄膜晶体管(TFT)阵列基板包括基底,水平栅极线,网状存储电容电极(Vcom)线,用水平栅极线限定像素单元的纵向数据线。 对应于网状Vcom线的每行中的像素单元的Vcom线彼此连接,网状Vcom线通过Vcom线IC端子与集成电路(IC)元件连接; 如果数据线的数量为N,则Vcom线路IC端子的数量大于0且小于N + 1; 并且在两个相邻行中的Vcom线之间提供至少一个Vcom线纵向电连接部。