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1. 发明授权

US06768125B2 Maskless particle-beam system for exposing a pattern on a substrate 有权
标题翻译：用于在衬底上露出图案的无掩模粒子束系统
公开(公告)号：US06768125B2
公开(公告)日：2004-07-27
申请号：US10337903
申请日：2003-01-08
申请人： Elmar Platzgummer , Hans Loeschner , Gerhard Stengl , Herbert Vonach , Alfred Chalupka , Gertraud Lammer , Herbert Buschbeck , Robert Nowak , Till Windischbauer
发明人： Elmar Platzgummer , Hans Loeschner , Gerhard Stengl , Herbert Vonach , Alfred Chalupka , Gertraud Lammer , Herbert Buschbeck , Robert Nowak , Till Windischbauer
IPC分类号： H01J3706
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174
摘要： A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.
摘要翻译：一种用于限定用于粒子束曝光设备（100）的图案的设备（102），所述设备适于用带电粒子的光束（lb，pb）照射，并且仅使光束通过多个的孔径包括孔径阵列装置（203）和消隐装置（202）。孔径阵列装置（203）具有限定子束（bm）形状的相同形状的多个孔（21,230）。消隐装置（202）用于切断所选子束的通过; 它具有多个开口（220），每个开口对应于孔阵列装置（203）的相应孔径（230），并且设置有偏转装置（221），该偏转装置可控制，以使通过开口辐射的颗粒偏离其路径（p1 ）到所述曝光装置（100）内的吸收表面。孔（21）布置在由多个交错的孔（p1）组成的图案定义区域（pf）内的消隐和孔径阵列装置（202,203）上。线（p1）中的每一个交替地包括没有孔的第一段（sf）和第二段（af），每个段包括通过行偏移（pm）间隔开的多个孔，所述行偏移是孔的宽度（w），所述第一段（sf）的长度（A）大于行偏移。在沿着该粒子束的方向观察的消隐装置（202）的前面，提供具有多个开口（210）的盖装置（201），每个开口对应于消隐装置的相应开口（230）具有比消隐阵列装置的开口（220）的宽度（w2）小的宽度（w1）。

2. 发明授权

US5874739A Arrangement for shadow-casting lithography 失效
标题翻译：阴影铸造光刻的安排
公开(公告)号：US5874739A
公开(公告)日：1999-02-23
申请号：US914070
申请日：1997-08-18
申请人： Herbert Buschbeck , Alfred Chalupka , Hans Loeschner , Gerhard Stengl , Herbert Vonach
发明人： Herbert Buschbeck , Alfred Chalupka , Hans Loeschner , Gerhard Stengl , Herbert Vonach
IPC分类号： G03F7/20 , H01J37/12 , H01J37/305 , H01L21/027 , H01J37/317
CPC分类号： H01J37/12 , G03F7/2047 , H01J2237/04924 , H01J2237/3175
摘要： An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.
摘要翻译：一种用于通过聚焦带电粒子的方法，用于通过聚焦带电粒子的方法将掩模的结构成像在立即设置在其后面的基底上，包括产生发散粒子的粒子源（2）和提取系统（3）并且包括用于聚焦发散粒子束的透镜（6），所述透镜（6）包括至少包括至少包括电极装置（6a，6b，6c，6d，6e，6f，6g，6h）一个静电收集透镜（6a至6f与静电发散透镜（6g，6h）结合），以便能够针对发散透镜的透镜误差以有目的的方式补偿收集透镜的透镜误差，并使其成为可能成像刻度的可预先确定的变化，发散透镜优选地设置在光束方向上，在与掩模紧密接近的集光透镜的后方一定距离处，以便被遮蔽 e使用掩模作为发散透镜的光栅。

3. 发明授权

US5742062A Arrangement for masked beam lithography by means of electrically charged particles 失效
标题翻译：通过带电粒子进行掩模光刻的布置
公开(公告)号：US5742062A
公开(公告)日：1998-04-21
申请号：US598081
申请日：1996-02-08
申请人： Gerhard Stengl , Alfred Chalupka , Herbert Vonach , Hans Loeschner
发明人： Gerhard Stengl , Alfred Chalupka , Herbert Vonach , Hans Loeschner
IPC分类号： G21K5/04 , G03F7/20 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/10
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/04735 , H01J2237/04924 , H01J2237/31755 , H01J2237/31788
摘要： An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which leave the source (Q) in the form of a divergent particle beam, and with an electrode arrangement (B, B', El.sub.1, El.sub.2, E.sub.3, . . . El.sub.n) for concentrating the divergent particle beam into a particle beam which is at least approximately parallel, by means of which an electrostatic acceleration field (E) is generated, the potential (U) of which in the beam direction has a constant gradient at least in parts and perpendicular to the beam direction is substantially constant at least within the beam cross-section. The electrode arrangement can be formed for example by a plurality of coaxial ring electrodes (El.sub.1, El.sub.2, El.sub.3, . . . El.sub.n) which are disposed at intervals behind one another in the beam direction, by a coaxial hollow cylinder which is aligned in the beam direction or a grating with a predetermined constant electrical resistance per unit of length, or by a plurality of longitudinal bars which are aligned in the beam direction, disposed parallel on surface of an imaginary coaxial cylinder with a predetermined constant electrical resistance per unit of length.
摘要翻译：用于通过带电粒子进行掩模束光刻的布置，用于对布置在其后面的基板上的掩模的结构进行成像，具有基本上点状的粒子源（Q）和用于特定类型的带电粒子的提取系统（Ex）其以发散粒子束的形式离开源极（Q），并且具有用于将发散粒子束集中到粒子束中的电极装置（B，B'，El1，El2，E3，...，Eln）至少近似平行，通过该静电加速场产生静电加速度场（E），至少在波束方向的至少部分和垂直于波束方向的波束方向的电位（U）至少在梁横截面。电极布置可以由例如多个同轴环电极（E11，E12，E13 ...，Eln）形成，这两个同轴环电极通过一个同轴的中空圆筒形成，该同轴环形电极沿光束方向彼此间隔设置，光束方向或具有每单位长度的预定恒定电阻的光栅，或通过沿着光束方向对准的多个纵向条，平行于虚拟同轴圆柱体的表面设置，每单位长度具有预定的恒定电阻。

4. 发明授权

US06326632B1 Particle-optical imaging system for lithography purposes 有权
标题翻译：用于光刻目的的粒子光学成像系统
公开(公告)号：US06326632B1
公开(公告)日：2001-12-04
申请号：US09417633
申请日：1999-10-13
申请人： Herbert Buschbeck , Alfred Chalupka , Gertraud Lammer , Hans Loeschner , Gerhard Stengl
发明人： Herbert Buschbeck , Alfred Chalupka , Gertraud Lammer , Hans Loeschner , Gerhard Stengl
IPC分类号： G21K108
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/12 , H01J37/3174 , H01J2237/04924
摘要： In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.
摘要翻译：在粒子光学成像光刻系统中，包括粒子源和第一静电透镜装置的照明系统产生穿透设置有位于粒子束路径中的孔结构的掩模箔的粒子束。该结构通过包括第二静电透镜装置的投影系统在基板平面上成像。第一和第二透镜装置在其面对掩模保持装置的相应侧面上分别包括至少一个前和后掩模电极。通过对前后掩模电极和掩模箔施加不同的静电电位，掩模箔和预掩模电极形成具有负折射力的网格透镜，并且掩模箔和后掩模电极也形成具有负折射力的网格透镜。

5. 发明授权

US06909103B2 Ion irradiation of a target at very high and very low kinetic ion energies 有权
标题翻译：在非常高和非常低的动力学离子能量下对靶进行离子照射
公开(公告)号：US06909103B2
公开(公告)日：2005-06-21
申请号：US10886463
申请日：2004-07-07
申请人： Elmar Platzgummer , Gerhard Stengl , Hans Loeschner
发明人： Elmar Platzgummer , Gerhard Stengl , Hans Loeschner
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/145
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/0453 , H01J2237/047 , H01J2237/0473 , H01J2237/04735
摘要： A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.
摘要翻译：一种用于通过能量带电粒子的光束（2）照射目标物体的粒子束曝光装置（1）包括：用于将所述粒子产生并形成为定向光束（21）的照明系统（101） ; 位于照明系统之后的图案定义装置（102），用于定位在定向光束的路径中对颗粒透明的孔的图案，从而形成从图案定义装置通过孔排出的图案化的束（22）; 以及位于图案定义装置（102）之后的投影系统（103），用于将图案化的光束（22）投影到位于投影系统之后的目标（41）上。该装置还包括加速/减速装置（32），该加速/减速装置（32）包含电位梯度，该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

6. 发明申请

US20050012052A1 Ion irradiation of a target at very high and very low kinetic ion energies 有权
标题翻译：在非常高和非常低的动力学离子能量下对靶进行离子照射
公开(公告)号：US20050012052A1
公开(公告)日：2005-01-20
申请号：US10886463
申请日：2004-07-07
申请人： Elmar Platzgummer , Gerhard Stengl , Hans Loeschner
发明人： Elmar Platzgummer , Gerhard Stengl , Hans Loeschner
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/0453 , H01J2237/047 , H01J2237/0473 , H01J2237/04735
摘要： A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.
摘要翻译：一种用于通过能量带电粒子的光束（2）照射目标物体的粒子束曝光装置（1）包括：用于将所述粒子产生并形成为定向光束（21）的照明系统（101） ; 位于照明系统之后的图案定义装置（102），用于定位在定向光束的路径中对颗粒透明的孔的图案，从而形成从图案定义装置通过孔排出的图案化的束（22）; 以及位于图案定义装置（102）之后的投影系统（103），用于将图案化的光束（22）投影到位于投影系统之后的目标（41）上。该装置还包括加速/减速装置（32），该加速/减速装置（32）包含电位梯度，该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

7. 发明授权

US08546767B2 Pattern definition device with multiple multibeam array 有权
标题翻译：具有多个多波束阵列的模式定义设备
公开(公告)号：US08546767B2
公开(公告)日：2013-10-01
申请号：US12959270
申请日：2010-12-02
申请人： Elmar Platzgummer , Hans Loeschner
发明人： Elmar Platzgummer , Hans Loeschner
IPC分类号： G21K1/08
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/28 , H01J37/3174 , H01J2237/0437 , H01J2237/0458 , H01J2237/1501 , H01J2237/1502
摘要： A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.
摘要翻译：用于粒子束处理或检查装置的多光束图案定义装置（102）被配置为用带电粒子的束（lp，bp）照射，以便形成若干待成像的子束一个目标。孔径阵列装置（202）包括用于限定各个子束（b1-b5）的至少两组孔（221,222），其中所述孔组包括布置在隔行布置中的多个孔，并且不同组的孔是通过公共位移矢量（d12）彼此偏移。开口阵列装置（201）具有多个开口（210），所述多个开口（210）构造成用于通过对应于所述一组孔的子束的子集，但是在对应于其它组的位置处的位置处缺少开口（对于不透明的）孔。定位装置相对于开口阵列装置移动孔径阵列装置，以选择性地使组的一组孔与开口阵列装置中的开口对准。

8. 发明申请

US20110204253A1 PATTERN DEFINITION DEVICE WITH MULTIPLE MULTIBEAM ARRAY 有权
标题翻译：具多个多重阵列的图形定义装置
公开(公告)号：US20110204253A1
公开(公告)日：2011-08-25
申请号：US12959270
申请日：2010-12-02
申请人： Elmar Platzgummer , Hans Loeschner
发明人： Elmar Platzgummer , Hans Loeschner
IPC分类号： G21K1/08
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/28 , H01J37/3174 , H01J2237/0437 , H01J2237/0458 , H01J2237/1501 , H01J2237/1502
摘要： A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.
摘要翻译：用于粒子束处理或检查装置的多光束图案定义装置（102）被配置为用带电粒子的束（lp，bp）照射，以便形成若干待成像的子束一个目标。孔径阵列装置（202）包括用于限定各个子束（b1-b5）的至少两组孔（221,222），其中所述孔组包括布置在隔行布置中的多个孔，并且不同组的孔是通过公共位移矢量（d12）彼此偏移。开口阵列装置（201）具有多个开口（210），所述多个开口（210）构造成用于通过对应于所述一组孔的子束的子集，但是在对应于其它组的位置处的位置处缺少开口（对于不透明的）孔。定位装置相对于开口阵列装置移动孔径阵列装置，以选择性地使组的一组孔与开口阵列装置中的开口对准。

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