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    • 1. 发明授权
    • Maskless particle-beam system for exposing a pattern on a substrate
    • 用于在衬底上露出图案的无掩模粒子束系统
    • US06768125B2
    • 2004-07-27
    • US10337903
    • 2003-01-08
    • Elmar PlatzgummerHans LoeschnerGerhard StenglHerbert VonachAlfred ChalupkaGertraud LammerHerbert BuschbeckRobert NowakTill Windischbauer
    • Elmar PlatzgummerHans LoeschnerGerhard StenglHerbert VonachAlfred ChalupkaGertraud LammerHerbert BuschbeckRobert NowakTill Windischbauer
    • H01J3706
    • B82Y10/00B82Y40/00H01J37/045H01J37/3174
    • A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.
    • 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。
    • 6. 发明授权
    • Arrangement for shadow-casting lithography
    • 阴影铸造光刻的安排
    • US5874739A
    • 1999-02-23
    • US914070
    • 1997-08-18
    • Herbert BuschbeckAlfred ChalupkaHans LoeschnerGerhard StenglHerbert Vonach
    • Herbert BuschbeckAlfred ChalupkaHans LoeschnerGerhard StenglHerbert Vonach
    • G03F7/20H01J37/12H01J37/305H01L21/027H01J37/317
    • H01J37/12G03F7/2047H01J2237/04924H01J2237/3175
    • An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.
    • 一种用于通过聚焦带电粒子的方法,用于通过聚焦带电粒子的方法将掩模的结构成像在立即设置在其后面的基底上,包括产生发散粒子的粒子源(2)和提取系统(3) 并且包括用于聚焦发散粒子束的透镜(6),所述透镜(6)包括至少包括至少包括电极装置(6a,6b,6c,6d,6e,6f,6g,6h) 一个静电收集透镜(6a至6f与静电发散透镜(6g,6h)结合),以便能够针对发散透镜的透镜误差以有目的的方式补偿收集透镜的透镜误差,并使其成为可能 成像刻度的可预先确定的变化,发散透镜优选地设置在光束方向上,在与掩模紧密接近的集光透镜的后方一定距离处,以便被遮蔽 e使用掩模作为发散透镜的光栅。
    • 7. 发明授权
    • Charged particle system
    • 带电粒子系统
    • US08049189B2
    • 2011-11-01
    • US12090636
    • 2006-10-20
    • Herbert BuschbeckElmar PlatzgummerGerhard StenglHerbert Vonach
    • Herbert BuschbeckElmar PlatzgummerGerhard StenglHerbert Vonach
    • G21K1/00
    • H01J37/3174B82Y10/00B82Y40/00H01J37/147H01J37/21H01J2237/0492H01J2237/24578
    • A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.
    • 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜(403),其包括具有径向内端(411')的外极片(411)和设置有最下端(412')的内极片(412) 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极(451)和第二电极(450)的聚焦静电透镜(450) 以及控制器(C),被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。
    • 9. 发明授权
    • Arrangement for masked beam lithography by means of electrically charged
particles
    • 通过带电粒子进行掩模光刻的布置
    • US5742062A
    • 1998-04-21
    • US598081
    • 1996-02-08
    • Gerhard StenglAlfred ChalupkaHerbert VonachHans Loeschner
    • Gerhard StenglAlfred ChalupkaHerbert VonachHans Loeschner
    • G21K5/04G03F7/20H01J37/30H01J37/305H01J37/317H01L21/027H01J37/10
    • B82Y10/00B82Y40/00H01J37/3007H01J37/3175H01J2237/04735H01J2237/04924H01J2237/31755H01J2237/31788
    • An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which leave the source (Q) in the form of a divergent particle beam, and with an electrode arrangement (B, B', El.sub.1, El.sub.2, E.sub.3, . . . El.sub.n) for concentrating the divergent particle beam into a particle beam which is at least approximately parallel, by means of which an electrostatic acceleration field (E) is generated, the potential (U) of which in the beam direction has a constant gradient at least in parts and perpendicular to the beam direction is substantially constant at least within the beam cross-section. The electrode arrangement can be formed for example by a plurality of coaxial ring electrodes (El.sub.1, El.sub.2, El.sub.3, . . . El.sub.n) which are disposed at intervals behind one another in the beam direction, by a coaxial hollow cylinder which is aligned in the beam direction or a grating with a predetermined constant electrical resistance per unit of length, or by a plurality of longitudinal bars which are aligned in the beam direction, disposed parallel on surface of an imaginary coaxial cylinder with a predetermined constant electrical resistance per unit of length.
    • 用于通过带电粒子进行掩模束光刻的布置,用于对布置在其后面的基板上的掩模的结构进行成像,具有基本上点状的粒子源(Q)和用于特定类型的带电粒子的提取系统(Ex) 其以发散粒子束的形式离开源极(Q),并且具有用于将发散粒子束集中到粒子束中的电极装置(B,B',El1,El2,E3,...,Eln) 至少近似平行,通过该静电加速场产生静电加速度场(E),至少在波束方向的至少部分和垂直于波束方向的波束方向的电位(U)至少在 梁横截面。 电极布置可以由例如多个同轴环电极(E11,E12,E13 ...,Eln)形成,这两个同轴环电极通过一个同轴的中空圆筒形成,该同轴环形电极沿光束方向彼此间隔设置, 光束方向或具有每单位长度的预定恒定电阻的光栅,或通过沿着光束方向对准的多个纵向条,平行于虚拟同轴圆柱体的表面设置,每单位长度具有预定的恒定电阻 。