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    • 1. 发明授权
    • Method and apparatus for refreshing memory cells
    • 刷新存储单元的方法和装置
    • US06788606B2
    • 2004-09-07
    • US10284806
    • 2002-10-31
    • Heiko FibranzHelmut Fischer
    • Heiko FibranzHelmut Fischer
    • G11C700
    • G11C11/406
    • In a memory element with a first number of memory cells having a first retention time for holding a content of the memory cells and a second number of memory cells having a second retention time for holding the content of the memory cell, a method for refreshing the memory cells comprises a step of refreshing the first number of memory cells when reaching the first retention time and a step of refreshing the second number of memory cells when reaching the second retention time. An apparatus for refreshing the memory cells of the memory element is provided for refreshing the first number of memory cells when reaching the first retention time, and for refreshing the second number of memory cells when reaching the second retention time.
    • 在具有第一数量的存储单元的存储元件中,具有用于保持存储单元的内容的第一保留时间和具有用于保持存储单元的内容的第二保留时间的第二数量的存储单元, 存储单元包括当达到第一保留时间时刷新第一数量的存储器单元的步骤以及在达到第二保留时间时刷新第二数量的存储器单元的步骤。 提供用于刷新存储元件的存储单元的装置,用于在达到第一保留时间时刷新第一数量的存储单元,并且用于在达到第二保留时间时刷新第二数量的存储单元。
    • 3. 发明授权
    • Calibration standard
    • 校准标准
    • US07784325B2
    • 2010-08-31
    • US11599600
    • 2006-11-14
    • Helmut Fischer
    • Helmut Fischer
    • G01B3/30
    • G01B7/105
    • The invention relates to a calibration standard, especially for the calibration of devices for the non-destructive measurement of the thickness of thin layers with a carrier plate (16) of a basic material and a standard (17) applied on the carrier plate (16), said standard having the thickness of the layer at which the device is to be calibrated, wherein that a holding device (22) arranged on the basic body (12) of the calibration standard (11) receives at least the standard (17) to the basic body (12) such that upon setting a measuring probe of the device for the non-destructive measurement of thin layers onto the standard (17), its position will be changeable by at least one degree of freedom.
    • 本发明涉及一种校准标准,特别是用于校准具有基材的载体板(16)和施加在载体板(16)上的标准物(17)的薄层厚度的非破坏性测量的装置 ),所述标准具有要在其上校准装置的层的厚度,其中布置在校准标准(11)的基体(12)上的保持装置(22)至少接收标准(17) 到基体(12),使得当将用于薄层的非破坏性测量的装置的测量探针设置到标准(17)上时,其位置将可以至少一个自由度改变。
    • 4. 发明授权
    • Method for producing an integrated memory module
    • 用于生成集成存储器模块的方法
    • US07359278B2
    • 2008-04-15
    • US11009557
    • 2004-12-10
    • Helmut Fischer
    • Helmut Fischer
    • G11C8/00
    • G11C7/1045G11C7/1072G11C11/4076
    • A method for producing an integrated memory module containing a command decoding device that responds to external operation commands to set operating states of the memory module for carrying out operations in accordance with a predetermined specification of the memory module. The command decoding device is formed with a decision memory containing memory locations Mi,j, the storage capacity of which suffices to receive, for an arbitrary specification from a plurality of different specifications, a decision information item specifying whether or how the second operation command of selected pairs of two directly successive operation commands is to be executed. After integration of the command decoding device thus formed, the decision information items demanded in the case of the predetermined specification are written to the memory locations of the decision memory.
    • 一种用于产生集成存储器模块的方法,所述集成存储器模块包含响应于外部操作命令的命令解码装置,以根据所述存储器模块的预定规格来设置用于执行操作的存储器模块的操作状态。 命令解码装置形成有判定存储器,该判定存储器包含存储器位置M i,j,其存储容量对于来自多个不同规格的任意规范就足以接收指定的决定信息项 是否要执行所选择的两个直接连续操作命令的对的第二操作命令。 在如此形成的命令解码装置的集成之后,将在预定规格的情况下所要求的判定信息项写入决定存储器的存储单元。
    • 6. 发明申请
    • Prestage for an off-chip driver (OCD)
    • 片外驱动程序(OCD​​)
    • US20060076979A1
    • 2006-04-13
    • US11244856
    • 2005-10-06
    • Paul BruckeHelmut Fischer
    • Paul BruckeHelmut Fischer
    • H03K19/0175
    • G11C7/1057G11C7/1051G11C11/4093H03K19/00384H03K19/018521
    • A prestage for generating a control signal for an output driver of an integrated circuit, wherein the integrated circuit can be provided with a reference potential and a supply potential fixed in relation to the reference potential, comprises an input for receiving an input signal from the integrated circuit, a circuitry for generating an output signal based on the received input signal, an output for outputting the generated output signals as control signal for an output driver as well as a current source, which is effectively connected to the circuitry. Thereby, the circuitry for generating an output signal and the current source are connected in series and connected to a first potential and a second potential such that a prestage potential difference across the series circuit is higher than a supply potential difference between the supply potential and the reference potential. Such a prestage has the advantage that it is less sensitive against variations on the reference potential or the reference potential, respectively, than conventional circuitries and can generate an output signal with well defined rise times.
    • 一种用于产生用于集成电路的输出驱动器的控制信号的前置放大器,其中所述集成电路可以被提供有相对于所述参考电位固定的参考电位和电源电位,包括用于接收来自所述集成电路的输入信号的输入 电路,用于基于接收的输入信号产生输出信号的电路,用于输出所生成的输出信号作为输出驱动器的控制信号的输出以及有效地连接到电路的电流源。 因此,用于产生输出信号和电流源的电路串联连接并连接到第一电位和第二电位,使得串联电路两端的前置电位差高于电源电压和 参考潜力。 这样的前置放大器的优点在于,它比传统电路分别对参考电位或参考电位的变化较不敏感,并且可以产生具有明确定义的上升时间的输出信号。
    • 8. 发明授权
    • Method for reading a memory cell in a semiconductor memory, and semiconductor memory
    • 用于读取半导体存储器中的存储单元的方法和半导体存储器
    • US06920074B2
    • 2005-07-19
    • US10642906
    • 2003-08-18
    • Helmut FischerKazimierz Szczypinski
    • Helmut FischerKazimierz Szczypinski
    • G11C11/409G11C7/06G11C11/401G11C7/00
    • G11C7/06
    • In a semiconductor memory, there is capacitive coupling between bit lines that largely run in parallel. Outer sections of the bit lines are connected via respective switches to a sense amplifier arranged between the switches. When a memory cell is being read, the capacitive interference by other bit lines that are not coupled to the memory cell being read is kept as low as possible before the start of amplification by the sense amplifier by turning on the switches in that bit line. During the amplification phase, the remote outer section of that bit line is disconnected using the appropriate switch. In one embodiment, the capacitance of the bit line that is not connected to the memory cell to be read is increased further by additionally activating a precharging circuit.
    • 在半导体存储器中,存在大量平行运行的位线之间的电容耦合。 位线的外部部分经由相应的开关连接到布置在开关之间的读出放大器。 当正在读取存储器单元时,通过接通该位线中的开关,由读出放大器开始放大之前,未耦合到正在读取的存储器单元的其它位线的电容性干扰保持尽可能低。 在放大阶段期间,使用适当的开关断开该位线的远程外部部分。 在一个实施例中,通过附加地激活预充电电路来进一步增加未连接到要读取的存储器单元的位线的电容。
    • 9. 发明授权
    • Storage circuit
    • 存储电路
    • US06759879B2
    • 2004-07-06
    • US10429158
    • 2003-05-02
    • Helmut FischerKazimierz Szczypinski
    • Helmut FischerKazimierz Szczypinski
    • H03K1700
    • G11C7/225G11C7/22G11C7/222G11C2207/2227
    • A storage circuit comprises a first clock receiver circuit for receiving an external clock signal so as to produce from said external clock signal a first internal clock signal and so as to output the first internal clock signal for use within the storage circuit, as well as a second clock receiver circuit for receiving said external clock signal and for producing from said external clock signal a second internal clock signal, said second clock receiver circuit consuming less current than said first clock receiver circuit. In addition, a circuit block is provided, which operates on the basis of said first or second internal clock signal and which is used for switching off said first clock receiver circuit when a power-down-precharge mode exists, said circuit block operating on the basis of said second internal clock signal, when the first clock receiver circuit has been switched off. A reduced current consumption can be achieved by the present invention in this way.
    • 存储电路包括:第一时钟接收器电路,用于接收外部时钟信号,以便从所述外部时钟信号产生第一内部时钟信号,并输出第一内部时钟信号以在存储电路内使用,以及 第二时钟接收器电路,用于接收所述外部时钟信号,并且用于从所述外部时钟信号产生第二内部时钟信号,所述第二时钟接收器电路比所述第一时钟接收器电路消耗更少的电流。 此外,提供了一个电路块,其基于所述第一或第二内部时钟信号进行操作,并且当存在掉电预充电模式时用于关断所述第一时钟接收器电路,所述电路块在 当所述第一时钟接收器电路已被切断时,所述第二内部时钟信号的基础。 通过本发明可以以这种方式实现减少的电流消耗。
    • 10. 发明授权
    • Data register with integrated signal level conversion
    • 具有集成信号电平转换的数据寄存器
    • US06744279B2
    • 2004-06-01
    • US10132388
    • 2002-04-26
    • Helmut FischerIoannis Chrissotomidis
    • Helmut FischerIoannis Chrissotomidis
    • H03K190175
    • G11C7/1084G11C7/1051G11C7/1078G11C7/1087
    • Data register for storage of a data bit with integrated signal level conversion. The data register has an input for application of a data bit input signal which has a first voltage shift between a reference ground potential and a first voltage potential, a controllable switching device for passing on the applied data bit signal, a potential isolating transistor having a control connection at the first voltage potential, a first inverter which emits, in inverted form, the passed-on data bit input signal as a data bit output signal having a second voltage shift between the reference ground potential and a second supply potential, at one output of the data register for further data processing, and a second inverter, which feeds back the data output signal for storage of the data bit.
    • 用于存储具有集成信号电平转换的数据位的数据寄存器。 数据寄存器具有用于施加数据位输入信号的输入,该数据位输入信号具有参考地电位和第一电压电位之间的第一电压偏移,用于传递所施加的数据位信号的可控开关器件,具有 在第一电压电位处的控制连接;第一反相器,其以反向形式发射所述传递数据位输入信号,作为在参考地电位和第二电源电位之间具有第二电压偏移的数据位输出信号 用于进一步数据处理的数据寄存器的输出;以及反馈数据输出信号以存储数据位的第二反相器。