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1. 发明申请

US20090190397A1 Memory device and data reading method 有权
标题翻译：存储器和数据读取方式
公开(公告)号：US20090190397A1
公开(公告)日：2009-07-30
申请号：US12232138
申请日：2008-09-11
申请人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
发明人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
IPC分类号： G11C16/06 , G11C16/00 , G11C7/00
CPC分类号： G11C11/5642 , G11C16/3418 , G11C29/00
摘要： A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.
摘要翻译：提供存储器件和存储器数据读取方法。存储器件可以包括：多位单元阵列; 编程单元，其将N个数据页存储在多位单元阵列中的存储器页面中; 以及控制单元，其将N个数据页划分为第一组和第二组，从存储器页面读取第一组的数据，并且基于读取的数据确定从存储器页面读取第二组的数据的方案第一组。

2. 发明申请

US20090185417A1 Apparatus and method of memory programming 有权
标题翻译：存储器编程的装置和方法
公开(公告)号：US20090185417A1
公开(公告)日：2009-07-23
申请号：US12213944
申请日：2008-06-26
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C29/00 , G11C2216/14
摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
摘要翻译：提供了存储器编程设备和/或方法。存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。数据存储单元可以被配置为存储数据页。第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。索引存储单元可以被配置为存储所生成的索引信息。编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。第一计数单元可以将生成的索引信息发送到编程单元。存储器编程装置可以监视存储器单元中阈值电压的分布状态。

3. 发明授权

US07843727B2 Memory device and data reading method 有权
标题翻译：存储器和数据读取方式
公开(公告)号：US07843727B2
公开(公告)日：2010-11-30
申请号：US12232138
申请日：2008-09-11
申请人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
发明人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
IPC分类号： G11C16/04
CPC分类号： G11C11/5642 , G11C16/3418 , G11C29/00
摘要： A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.
摘要翻译：提供存储器件和存储器数据读取方法。存储器件可以包括：多位单元阵列; 编程单元，其将N个数据页存储在多位单元阵列中的存储器页面中; 以及控制单元，其将N个数据页划分为第一组和第二组，从存储器页面读取第一组的数据，并且基于读取的数据确定从存储器页面读取第二组的数据的方案第一组。

4. 发明授权

US07831881B2 Apparatus and method for hybrid detection of memory data 有权
标题翻译：用于存储器数据的混合检测的装置和方法
公开(公告)号：US07831881B2
公开(公告)日：2010-11-09
申请号：US12230832
申请日：2008-09-05
申请人： Heeseok Eun , Jae Hong Kim , Jun Jin Kong
发明人： Heeseok Eun , Jae Hong Kim , Jun Jin Kong
IPC分类号： H04L1/00
CPC分类号： G11C29/52 , G11C11/5642 , G11C29/00 , G11C2029/0411 , G11C2211/5634
摘要： The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.
摘要翻译：数据检测装置可以提供电压比较单元，其将存储在存储单元中的多个数据位中的与特定数据位相关联的参考电压与存储单元中的阈值电压进行比较，检测单元检测基于电压比较单元的结果的特定数据位的值，以及判定单元，其基于检测到的数据中是否发生错误来判定是否成功检测到特定数据位。响应于决定的结果，检测单元可以基于关于特定数据比特的上位数据位和下位数据位中的至少一个的检测信息重新检测特定数据位的值单元。

5. 发明授权

US07738293B2 Apparatus and method of memory programming 有权
标题翻译：存储器编程的装置和方法
公开(公告)号：US07738293B2
公开(公告)日：2010-06-15
申请号：US12213944
申请日：2008-06-26
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
IPC分类号： G11C16/04 , G11C29/04
CPC分类号： G11C11/5628 , G11C29/00 , G11C2216/14
摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
摘要翻译：提供了存储器编程设备和/或方法。存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。数据存储单元可以被配置为存储数据页。第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。索引存储单元可以被配置为存储所生成的索引信息。编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。第一计数单元可以将生成的索引信息发送到编程单元。存储器编程装置可以监视存储器单元中阈值电压的分布状态。

6. 发明申请

US20090235129A1 Apparatus and method for hybrid detection of memory data 有权
标题翻译：用于存储器数据的混合检测的装置和方法
公开(公告)号：US20090235129A1
公开(公告)日：2009-09-17
申请号：US12230832
申请日：2008-09-05
申请人： Heeseok Eun , Jae Hong Kim , Jun Jin Kong
发明人： Heeseok Eun , Jae Hong Kim , Jun Jin Kong
IPC分类号： G11C29/04 , G06F11/22 , G06F11/00
CPC分类号： G11C29/52 , G11C11/5642 , G11C29/00 , G11C2029/0411 , G11C2211/5634
摘要： The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.
摘要翻译：数据检测装置可以提供电压比较单元，其将存储在存储单元中的多个数据位中的与特定数据位相关联的参考电压与存储单元中的阈值电压进行比较，检测单元检测基于电压比较单元的结果的特定数据位的值，以及判定单元，其基于检测到的数据中是否发生错误来判定是否成功检测到特定数据位。响应于决定的结果，检测单元可以基于关于特定数据比特的上位数据位和下位数据位中的至少一个的检测信息重新检测特定数据位的值单元。

7. 发明授权

US08279668B2 Apparatus and method of memory programming 有权
标题翻译：存储器编程的装置和方法
公开(公告)号：US08279668B2
公开(公告)日：2012-10-02
申请号：US12801532
申请日：2010-06-14
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C29/00 , G11C2216/14
摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
摘要翻译：提供了存储器编程设备和/或方法。存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。数据存储单元可以被配置为存储数据页。第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。索引存储单元可以被配置为存储所生成的索引信息。编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。第一计数单元可以将生成的索引信息发送到编程单元。存储器编程装置可以监视存储器单元中阈值电压的分布状态。

8. 发明申请

US20090235128A1 Data detecting apparatus based on channel information and method thereof 审中-公开
标题翻译：基于信道信息的数据检测装置及其方法
公开(公告)号：US20090235128A1
公开(公告)日：2009-09-17
申请号：US12230502
申请日：2008-08-29
申请人： Heeseok Eun , Jun Jin Kong , Jae Hong Kim
发明人： Heeseok Eun , Jun Jin Kong , Jae Hong Kim
IPC分类号： G06F11/10 , G06F12/02 , G06F11/34
CPC分类号： G06F11/1008 , G11C16/26
摘要： An apparatus and a method for detecting data stored in a memory cell based on channel information of the memory cell are provided. The data detecting apparatus may include a voltage comparison unit that compares a plurality of soft decision reference voltages between neighboring hard decision reference voltages with a threshold voltage of a memory cell to determine a region including the threshold voltage, and a data detection unit that detects data stored in the memory cell based on channel information of the memory cell according to the region. The data detecting apparatus may further include a reference voltage determination unit that determines the plurality of soft decision reference voltages based on the channel information of the memory cell.
摘要翻译：提供了一种用于基于存储器单元的信道信息来检测存储在存储单元中的数据的装置和方法。数据检测装置可以包括电压比较单元，其将相邻硬判决参考电压之间的多个软判决参考电压与存储器单元的阈值电压进行比较，以确定包括阈值电压的区域;以及数据检测单元，其检测数据根据该区域，根据存储单元的信道信息存储在存储单元中。数据检测装置还可以包括参考电压确定单元，其基于存储器单元的信道信息来确定多个软判决参考电压。

9. 发明申请

US20090234792A1 Memory devices and data decision methods 有权
标题翻译：内存设备和数据决策方法
公开(公告)号：US20090234792A1
公开(公告)日：2009-09-17
申请号：US12292539
申请日：2008-11-20
申请人： Jae Hong Kim , Heeseok Eun , Yong June Kim , Jun Jin Kong , Seung-Hwan Song
发明人： Jae Hong Kim , Heeseok Eun , Yong June Kim , Jun Jin Kong , Seung-Hwan Song
IPC分类号： G06N5/00
CPC分类号： G06N99/005
摘要： Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.
摘要翻译：公开了一种存储器件和数据判定方法。存储器装置可以包括存储单元阵列，以及判定单元，被配置为经由第一通道从存储单元阵列读取第一数据，使用第一数量的判定级别对第一数据执行硬判决和软判决中的至少一个基于第一信道的特性设置，经由第二信道从存储器单元阵列读取第二数据，并且使用基于第二信道的特性设置的第二数量的判定级来对第二数据执行软判决。

10. 发明授权

US08200607B2 Memory devices and data decision methods 有权
标题翻译：内存设备和数据决策方法
公开(公告)号：US08200607B2
公开(公告)日：2012-06-12
申请号：US12292539
申请日：2008-11-20
申请人： Jae Hong Kim , Heeseok Eun , Yong June Kim , Jun Jin Kong , Seung-Hwan Song
发明人： Jae Hong Kim , Heeseok Eun , Yong June Kim , Jun Jin Kong , Seung-Hwan Song
IPC分类号： G06F17/00 , G06N5/02
CPC分类号： G06N99/005
摘要： Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.
摘要翻译：公开了一种存储器件和数据判定方法。存储器装置可以包括存储单元阵列，以及判定单元，被配置为经由第一通道从存储单元阵列读取第一数据，使用第一数量的判定级别对第一数据执行硬判决和软判决中的至少一个基于第一信道的特性设置，经由第二信道从存储器单元阵列读取第二数据，并且使用基于第二信道的特性设置的第二数量的判定级来对第二数据执行软判决。

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