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1. 发明授权

US5801373A Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate 失效
标题翻译：在公共基板上具有多个光电转换元件的固态图像拾取装置
公开(公告)号：US5801373A
公开(公告)日：1998-09-01
申请号：US950176
申请日：1997-10-14
申请人： Hayao Oozu , Mamoru Miyawaki , Akira Ishizaki , Shigetoshi Sugawa
发明人： Hayao Oozu , Mamoru Miyawaki , Akira Ishizaki , Shigetoshi Sugawa
IPC分类号： H01L27/146 , H01L27/148 , H04N1/00 , H04N1/48 , H04N5/33 , H04N5/372 , H04N9/04 , H01J40/14
CPC分类号： H04N1/00846 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14649 , H04N1/00864 , H04N1/00875 , H04N1/486 , H04N3/1562 , H04N3/1581 , H04N5/33 , H04N5/332 , H04N9/045
摘要： In a solid-state image pickup device this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signal in the invisible light range into an electrical signal, and photoelectric conversion elements for converting an optical signal in the visible light range into an electrical signal are formed on a common semiconductor chip.
摘要翻译：在本发明的固体摄像装置中，为了在从可见光范围到不可见光范围的宽光谱范围内令人满意地检测光信号，将用于将不可见光范围内的光信号转换为电信号和用于将可见光范围内的光信号转换为电信号的光电转换元件形成在公共半导体芯片上。

2. 发明授权

US5453611A Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip 失效
标题翻译：在公共半导体芯片上具有多个光电转换元件的固态图像拾取器件
公开(公告)号：US5453611A
公开(公告)日：1995-09-26
申请号：US174444
申请日：1993-12-28
申请人： Hayao Oozu , Mamoru Miyawaki , Akira Ishizaki , Shigetoshi Sugawa
发明人： Hayao Oozu , Mamoru Miyawaki , Akira Ishizaki , Shigetoshi Sugawa
IPC分类号： H01L27/146 , H01L27/148 , H04N1/00 , H04N1/48 , H04N5/33 , H04N5/372 , H04N9/04 , H01J40/14
CPC分类号： H04N1/00846 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14649 , H04N1/00864 , H04N1/00875 , H04N1/486 , H04N3/1562 , H04N3/1581 , H04N5/33 , H04N5/332 , H04N9/045
摘要： In a solid-state image pickup device of this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signal in the invisible light range into an electrical signal, and photoelectric conversion elements for converting an optical signal in the visible light range into an electrical signal are formed on a common semiconductor chip.
摘要翻译：在本发明的固态图像拾取装置中，为了在从可见光范围到不可见光范围的宽光谱范围内令人满意地检测光信号，将用于将不可见光范围内的光信号转换为电信号和用于将可见光范围内的光信号转换为电信号的光电转换元件形成在公共半导体芯片上。

3. 发明授权

US5513028A Liquid crystal display with display area having same height as peripheral portion thereof 失效
标题翻译：液晶显示器，其显示区域具有与其周边部分相同的高度
公开(公告)号：US5513028A
公开(公告)日：1996-04-30
申请号：US419762
申请日：1995-04-10
申请人： Koichi Sono , Mamoru Miyawaki , Akira Ishizaki , Katsuhisa Ogawa , Katsuhito Sakurai , Shigetoshi Sugawa , Shigeki Kondo
发明人： Koichi Sono , Mamoru Miyawaki , Akira Ishizaki , Katsuhisa Ogawa , Katsuhito Sakurai , Shigetoshi Sugawa , Shigeki Kondo
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1343 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/133514 , G02F1/1339 , G02F1/134336 , G02F1/1337 , G02F1/13454 , G02F1/1368 , G02F2001/133388
摘要： A liquid crystal display device has a pixel electrode substrate with a step defined by adjacent display and non-display areas. The display area has substantially the same height as a portion of the close periphery thereof. In the liquid crystal display device, the step is an electrically insulated dummy part which is not used as the display area. The dummy part has the same layer structure as the pixels in the display area.
摘要翻译：液晶显示装置具有由相邻显示区域和非显示区域限定的步骤的像素电极基板。显示区域与其周边的一部分具有大致相同的高度。在液晶显示装置中，该步骤是不用作显示区域的电绝缘虚拟部分。虚拟部分具有与显示区域中的像素相同的层结构。

4. 发明授权

US5530266A Liquid crystal image display unit and method for fabricating semiconductor optical member 失效
标题翻译：液晶图像显示单元及制造半导体光学元件的方法
公开(公告)号：US5530266A
公开(公告)日：1996-06-25
申请号：US242047
申请日：1994-05-13
申请人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
发明人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
IPC分类号： G02F1/1362 , H01L27/12 , H01L27/092 , H01L27/105
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , H01L27/1233 , G02F2001/136281 , G02F2202/105 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.
摘要翻译：在对可见光区域的光不透明的基板上形成的液晶图像显示单元，其特征在于，除去所述基板上的液晶像素部下方的部分，使得所述光透过所述液晶像素部分。

5. 发明授权

US5827755A Liquid crystal image display unit and method for fabricating semiconductor optical member 失效
公开(公告)号：US5827755A
公开(公告)日：1998-10-27
申请号：US517903
申请日：1995-08-22
申请人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
发明人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
IPC分类号： G02F1/1362 , H01L27/12 , H01L21/00 , H01L21/301 , H01L21/76
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , H01L27/1233 , G02F2001/136281 , G02F2202/105 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

6. 发明授权

US4835404A Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors 失效
标题翻译：具有开关电路的光电转换装置和用于读取和复位多个线传感器的复位电路
公开(公告)号：US4835404A
公开(公告)日：1989-05-30
申请号：US97456
申请日：1987-09-14
申请人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki , Akira Ishizaki
发明人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki , Akira Ishizaki
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H04N3/1593 , H01L27/14681 , H04N3/1581
摘要： A photoelectric converting device having a plurality of line sensors, each line sensor having an output line and scanning means for scanning that line sensor. Selection circuit selectably directs a signal from one of the plural output lines to a common output terminal. A reset device resets the common output line to a predetermined level in response to the scanning of the line after the signal has been directed to the common output terminal. The readout may be conducted by scanning the plurality of line sensors by alternatively scanning photoelectric conversion cells from different line sensors.
摘要翻译：一种具有多个线传感器的光电转换装置，每个线传感器具有输出线和用于扫描该线传感器的扫描装置。选择电路可选择地将来自多条输出线之一的信号引导到公共输出端。响应于在信号被引导到公共输出端之后的线的扫描，复位装置将公共输出线复位到预定电平。可以通过从不同的线传感器交替地扫描光电转换单元来扫描多个线传感器来进行读出。

7. 发明授权

US5019702A Photoelectric transducer apparatus having a plurality of transducer elements and a plurality of capacitor elements 失效
标题翻译：具有多个换能器元件和多个电容器元件的光电传感器装置
公开(公告)号：US5019702A
公开(公告)日：1991-05-28
申请号：US587647
申请日：1990-09-25
申请人： Hayao Ohzu , Toshiji Suzuki , Akira Ishizaki , Nobuyoshi Tanaka , Shigetoshi Sugawa , Seiji Hashimoto , Tadanori Harada
发明人： Hayao Ohzu , Toshiji Suzuki , Akira Ishizaki , Nobuyoshi Tanaka , Shigetoshi Sugawa , Seiji Hashimoto , Tadanori Harada
IPC分类号： H04N5/359 , H04N5/361 , H04N5/374 , H04N5/378
CPC分类号： H04N5/361 , H04N5/3591 , H04N5/374 , H04N5/378
摘要： In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing memory for storing optical information read out from the photoelectric transducer element; and dark voltage storing memory for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing memory and information corresponding to the dark voltage component stored in the dark voltage storing memory are simultaneously read out onto different information output lines.

8. 发明授权

US4870266A Photo signal storing sensor device 失效
标题翻译：照片信号存储传感器设备
公开(公告)号：US4870266A
公开(公告)日：1989-09-26
申请号：US151714
申请日：1988-02-03
申请人： Akira Ishizaki , Yoshio Nakamura , Shigetoshi Sugawa
发明人： Akira Ishizaki , Yoshio Nakamura , Shigetoshi Sugawa
IPC分类号： G02B7/28 , G02B7/36 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/369 , H04N5/374 , H04N5/378
CPC分类号： G02B7/36
摘要： A sensor device for cumulatively storing incident light in the form of electric charge is arranged to monitor the level of the cumulatively stored electric charge; to have one mode in which the storing action is allowed to continue until the electric charge level reaches a first, high given level if the electric charge level reaches a preset level within a given period of time; to have another mode in which the storing action is allowed to continue until the electric charge level reaches the preset level if the electric charge fails to reach the preset level within the given period of time; and to cause a signal obtained by the storing action to be read out after the end of the storing action with a degree of gain which is variable according to the mode in which the storing action is performed.
摘要翻译：设置用于累积存储电荷形式的入射光的传感器装置，用于监视累积电荷的电平; 具有一种模式，其中如果电荷水平在给定时间段内达到预设水平，则允许存储动作持续到电荷水平达到第一高给定水平; 如果在给定的时间段内电费不能达到预设电平，则具有允许存储动作持续到电荷电平达到预设电平的另一模式; 并且使得通过存储动作获得的信号在存储动作结束后以根据执行存储动作的模式可变的增益程度被读出。

9. 发明授权

US5331197A Semiconductor memory device including gate electrode sandwiching a channel region 失效
标题翻译：半导体存储器件包括夹着沟道区的栅电极
公开(公告)号：US5331197A
公开(公告)日：1994-07-19
申请号：US870258
申请日：1992-04-17
申请人： Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
发明人： Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
IPC分类号： H01L21/336 , H01L21/8234 , H01L27/102 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/786 , H01L29/78
CPC分类号： H01L29/7851 , H01L21/823475 , H01L27/1026 , H01L27/10805 , H01L27/115 , H01L29/66795
摘要： A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.
摘要翻译：一种半导体存储器件，包括：绝缘栅晶体管，具有沿着基板的主表面设置的多个主电极区域和设置在所述多个主电极区域之间的沟道区域;以及栅极电极，设置在所述沟道区域上，绝缘体之间，所述栅电极具有至少两个相对的部分; 以及设置在所述主电极区域之一上的电可破坏的存储元件。

10. 发明授权

US5428237A Semiconductor device having an insulated gate transistor 失效
标题翻译：具有绝缘栅极晶体管的半导体器件
公开(公告)号：US5428237A
公开(公告)日：1995-06-27
申请号：US158371
申请日：1993-11-29
申请人： Hiroshi Yuzurihara , Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Tetsunobu Kochi
发明人： Hiroshi Yuzurihara , Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Tetsunobu Kochi
IPC分类号： G11C17/16 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/112 , H01L27/12 , H01L29/06 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7851 , G11C17/16 , H01L21/823431 , H01L21/823475 , H01L21/8238 , H01L21/823821 , H01L29/0653 , H01L29/66651 , H01L29/66795 , H01L29/7834 , H01L29/78612 , H01L29/78639 , H01L27/112 , H01L27/1211 , Y10S257/901
摘要： An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with the channel region, the semiconductor region having the same conductivity type as that of the channel region and a higher impurity concentration than the channel region. The gate electrode has at least two opposing portions. The plurality of major electrode regions are provided on an substrate insulating film. The transistor is activated in a state where the semiconductor region is maintained at a predetermined voltage. A semiconductor device includes a plurality of memory cells, each of which includes the aforementioned insulated gate type transistor and an electrically breakable memory element provided on one of the major electrode regions.
摘要翻译：绝缘栅型晶体管包括多个主电极区域，设置在多个主电极区域之间的沟道区域，设置在沟道区域上的栅极电极之间的栅极绝缘膜，以及设置成与沟道接触的半导体区域区域，具有与沟道区相同的导电类型和比沟道区更高的杂质浓度的半导体区。栅电极具有至少两个相对的部分。多个主电极区域设置在基板绝缘膜上。晶体管在半导体区域保持在预定电压的状态下被激活。半导体器件包括多个存储单元，每个存储单元包括上述绝缘栅型晶体管和设置在其中一个主电极区上的电可破坏存储元件。

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