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1. 发明授权

US08592983B2 Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device 有权
标题翻译：将多个苯并环丁烯层与基材和相关装置整合的方法
公开(公告)号：US08592983B2
公开(公告)日：2013-11-26
申请号：US13310074
申请日：2011-12-02
申请人： Hasan Sharifi , Alexandros D. Margomenos , Ara K. Kurdoghlian , Miroslav Micovic , Keisuke Shinohara , Colleen M. Butler
发明人： Hasan Sharifi , Alexandros D. Margomenos , Ara K. Kurdoghlian , Miroslav Micovic , Keisuke Shinohara , Colleen M. Butler
IPC分类号： H01L23/532 , H01L51/40
CPC分类号： H01L23/53252 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.
摘要翻译：将苯并环丁烯（BCB）层与基板一体化的方法与相应的装置一起提供。一种方法包括在衬底上形成第一BCB层，并在第一BCB层上以及在由第一金属层限定的通孔内沉积第一金属层。该方法还在第一金属层上形成第二BCB层，并在第二BCB层上以及由第二金属层限定的通孔内沉积第二金属层。第二金属层延伸穿过由第二金属层限定的通孔，以建立与第一金属层的可操作连接。第一和第二金属层独立于与由衬底承载的任何电路元件的电连接，但第一和第二金属层将第二BCB层固定到下面的结构并降低分层的可能性。

2. 发明申请

US20130140579A1 METHOD OF INTEGRATING A PLURALITY OF BENZOCYCLOBUTENE LAYERS WITH A SUBSTRATE AND AN ASSOCIATED DEVICE 有权
标题翻译：用底物和相关器件集成多种含量的苯甲酸酯层的方法
公开(公告)号：US20130140579A1
公开(公告)日：2013-06-06
申请号：US13310074
申请日：2011-12-02
申请人： Hasan Sharifi , Alexandros D. Margomenos , Ara K. Kurdoghlian , Miroslav Micovic , Keisuke Shinohara , Colleen M. Butler
发明人： Hasan Sharifi , Alexandros D. Margomenos , Ara K. Kurdoghlian , Miroslav Micovic , Keisuke Shinohara , Colleen M. Butler
IPC分类号： H01L29/20 , H01L23/52 , H01L21/768
CPC分类号： H01L23/53252 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.
摘要翻译：将苯并环丁烯（BCB）层与基板一体化的方法与相应的装置一起提供。一种方法包括在衬底上形成第一BCB层，并在第一BCB层上以及在由第一金属层限定的通孔内沉积第一金属层。该方法还在第一金属层上形成第二BCB层，并在第二BCB层上以及由第二金属层限定的通孔内沉积第二金属层。第二金属层延伸穿过由第二金属层限定的通孔，以建立与第一金属层的可操作连接。第一和第二金属层独立于与由衬底承载的任何电路元件的电连接，但第一和第二金属层将第二BCB层固定到下面的结构并降低分层的可能性。

3. 发明授权

US08847202B1 Dual-band type-II superlattice detectors based on p-B-p design 有权
标题翻译：基于p-B-p设计的双频II型超晶格检测器
公开(公告)号：US08847202B1
公开(公告)日：2014-09-30
申请号：US13351997
申请日：2012-01-17
申请人： Brett Z. Nosho , Rajesh D. Rajavel , Hasan Sharifi , Sevag Terterian
发明人： Brett Z. Nosho , Rajesh D. Rajavel , Hasan Sharifi , Sevag Terterian
IPC分类号： H01L31/00 , H01L31/02 , H01L31/109 , H01L31/11 , H01L31/065
CPC分类号： H01L31/035236 , H01L31/02016 , H01L31/065 , H01L31/09 , H01L31/1013 , H01L31/109 , H01L31/11 , H01L31/18 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (
摘要翻译：基于II型超晶格（T2SL）的双频带红外探测器结构已被开发和实验验证。根据本发明的原理的结构被设计用于单个铟凸块结构并且利用省略传统p-n结区域的T2SL屏障设计。屏障设计包括多个周期，其中每个周期包括多个单层掺杂的P型。通过选择组合物，每个周期的单层数和周期数，在第一吸收层和第二吸收层之间的导带中产生过渡区，其允许以低偏差（对于两个带为<100mV）进行操作和显示较长波段的暗电流密度可与使用单色检测器获得的相当。

4. 发明授权

US09146157B1 Dual band SWIR/MWIR and MWIR1/MWIR2 infrared detectors 有权
标题翻译：双频SWIR / MWIR和MWIR1 / MWIR2红外探测器
公开(公告)号：US09146157B1
公开(公告)日：2015-09-29
申请号：US13427387
申请日：2012-03-22
申请人： Rajesh Rajavel , Hasan Sharifi , Terence De Lyon , Brett Nosho , Daniel Yap
发明人： Rajesh Rajavel , Hasan Sharifi , Terence De Lyon , Brett Nosho , Daniel Yap
IPC分类号： G01J5/20 , G01J3/36 , H01L27/146
CPC分类号： G01J3/36 , H01L27/14649 , H01L27/14652
摘要： A dual band detector includes a substrate, a composite barrier, a first absorber on the substrate and on a light incident side of the composite barrier, the first absorber for detecting first infrared light wavelengths, a second absorber on the composite barrier on a side opposite the light incident side, the second absorber for detecting second infrared light wavelengths, wherein a bandgap of the first absorber is larger than that of the second absorber, wherein the composite barrier includes a first secondary barrier, a primary barrier, and a second secondary barrier, wherein the first and second secondary barriers may have a lower bandgap energy than the primary barrier, wherein the first or the second secondary barrier may have a doping level and type different from that of the primary barrier, and wherein at least the primary barrier blocks majority carriers and allows minority carrier flow.
摘要翻译：双波段检测器包括基底，复合屏障，基底上的第一吸收体和复合屏障的光入射侧，用于检测第一红外光波长的第一吸收体，复合势垒上相反一侧的第二吸收体光入射侧，用于检测第二红外光波长的第二吸收体，其中所述第一吸收体的带隙大于所述第二吸收体的带隙，其中所述复合势垒包括第一次级阻挡层，主阻挡层和第二次级阻挡层，其中所述第一和第二次级阻挡层可具有比所述主阻挡层更低的带隙能量，其中所述第一或第二次级阻挡层可具有不同于所述主阻挡层的掺杂水平和类型，并且其中至少所述主阻挡块多数承运人并允许少数载体流动。

5. 发明授权

US08835979B1 Compound-barrier infrared photodetector 有权
标题翻译：复合屏障红外光电探测器
公开(公告)号：US08835979B1
公开(公告)日：2014-09-16
申请号：US13152896
申请日：2011-06-03
申请人： Terence J De Lyon , Rajesh D Rajavel , Hasan Sharifi
发明人： Terence J De Lyon , Rajesh D Rajavel , Hasan Sharifi
IPC分类号： H01L31/102
CPC分类号： H01L31/035272 , H01L27/14649 , H01L27/14652 , H01L31/0224 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/0328 , H01L31/035236 , H01L31/101 , H01L31/1035 , H01L31/109 , H01L31/11 , H01L31/1105 , H01L31/111 , H01L31/1113 , H01L31/1116 , H01L31/1844 , Y02E10/544
摘要： Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.
摘要翻译：使用多层，代替红外光电探测器的典型单层阻挡层的各种组成阻挡层导致具有增加的灵敏度和降低的暗电流的器件。第一屏障邻近半导体触点; 第二阻挡层位于第一阻挡层和吸收层之间。阻挡层可以是掺杂有N型或P型的铍，碳，硅或碲。能量带隙被设计为便于接触区域中的少数载流子电流流动并阻止接触区域外的少数电流。

6. 发明申请

US20070278631A1 Self-aligned wafer level integration system 有权
标题翻译：自对准晶圆级集成系统
公开(公告)号：US20070278631A1
公开(公告)日：2007-12-06
申请号：US11343256
申请日：2006-01-27
申请人： Hasan Sharifi , Saeed Mohammadi , Linda Katehi
发明人： Hasan Sharifi , Saeed Mohammadi , Linda Katehi
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L21/6835 , H01L21/568 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/82 , H01L25/0655 , H01L25/50 , H01L2221/68345 , H01L2224/04105 , H01L2224/24137 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/15787 , H01L2924/30105 , H01L2924/00
摘要： A polymer-based, self-aligned wafer-level heterogeneous integration system, SA WLIT, for integrating semiconductor integrated circuit (IC) chips to a substrate is presented. The system includes a method including preparing a substrate, flipping the substrate onto a polymer-based flat surface and securing the substrate to the flat surface, mounting semiconductor chips into the prepared substrate, integrating the chips to the substrate with another polymer-based material, and removing the resulting multi-chip module from the flat surface. The chips may then be connected with each other and regions off the multi-chip module with metal interconnect processing technology. A multi-chip module prepared by the polymer-based, self-aligned heterogeneous integration system including semiconductor chips mounted in a prepared substrate. The chips may be connected to the substrate by a polymer-based integrating material.
摘要翻译：提出了一种用于将半导体集成电路（IC）芯片集成到衬底的基于聚合物的自对准晶片级异质集成系统SA WLIT。该系统包括一种方法，包括制备基板，将基板翻转到基于聚合物的平坦表面上并将基板固定到平坦表面上，将半导体芯片安装到制备的基板中，将芯片与另一种聚合物基材料集成到基板上，并从平坦表面移除所得到的多芯片模块。然后可以利用金属互连处理技术将芯片彼此连接并且将多个芯片模块的区域连接。通过基于聚合物的自对准异相集成系统制备的多芯片模块，其包括安装在制备的基板中的半导体芯片。芯片可以通过基于聚合物的一体化材料连接到基板。

7. 发明授权

US09231137B1 Infrared photodetector with reticulated contact 有权
标题翻译：红外光电探测器与网状接触
公开(公告)号：US09231137B1
公开(公告)日：2016-01-05
申请号：US13152947
申请日：2011-06-03
申请人： Hasan Sharifi , Terence J. De Lyon , Rajesh D. Rajavel
发明人： Hasan Sharifi , Terence J. De Lyon , Rajesh D. Rajavel
IPC分类号： H01L31/0232 , H01L31/0328 , H01L31/0224
CPC分类号： H01L31/035272 , H01L27/14649 , H01L27/14652 , H01L31/0224 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/0328 , H01L31/035236 , H01L31/101 , H01L31/1035 , H01L31/109 , H01L31/11 , H01L31/1105 , H01L31/111 , H01L31/1113 , H01L31/1116 , H01L31/1844 , Y02E10/544
摘要： Using a highly doped Cap layer of the same composition as the Contact material in an nBn or pBp infrared photodetector allows engineering of the energy band diagram to facilitate minority carrier current flow in the contact region and block minority current flow outside the Contact region. The heavily doped Cap layer is disposed on the Barrier between the Contacts but electrically isolated from the Contact material.
摘要翻译：使用与nBn或pBp红外光电探测器中的接触材料相同组成的高度掺杂的Cap层，允许对能带图进行工程化，以便在接触区域内促进少数载流子电流流动并阻止接触区域外部的少数电流。重掺杂Cap层设置在触点之间的阻挡层上，但与触点材料电隔离。

8. 发明授权

US09064992B1 Method of fabricating dual-band type-II superlattice detectors based on p-B-p design 有权
标题翻译：基于p-B-p设计制造双频II型超晶格检测器的方法
公开(公告)号：US09064992B1
公开(公告)日：2015-06-23
申请号：US14460173
申请日：2014-08-14
申请人： Brett Z Nosho , Rajesh D Rajavel , Hasan Sharifi , Sevag Terterian
发明人： Brett Z Nosho , Rajesh D Rajavel , Hasan Sharifi , Sevag Terterian
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , H01L31/02016 , H01L31/065 , H01L31/09 , H01L31/1013 , H01L31/109 , H01L31/11 , H01L31/18 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (
摘要翻译：基于II型超晶格（T2SL）的双频带红外探测器结构已被开发和实验验证。根据本发明的原理的结构被设计用于单个铟凸块结构并且利用省略传统p-n结区域的T2SL屏障设计。屏障设计包括多个周期，其中每个周期包括多个单层掺杂的P型。通过选择组合物，每个周期的单层数和周期数，在第一吸收层和第二吸收层之间的导带中产生过渡区，其允许以低偏差（对于两个带为<100mV）进行操作和显示较长波段的暗电流密度可与使用单色检测器获得的相当。

9. 发明授权

US08969986B1 Infrared detector 有权
标题翻译：红外探测器
公开(公告)号：US08969986B1
公开(公告)日：2015-03-03
申请号：US13036403
申请日：2011-02-28
申请人： Daniel Yap , Rajesh D. Rajavel , Sarabjit Mehta , Hasan Sharifi
发明人： Daniel Yap , Rajesh D. Rajavel , Sarabjit Mehta , Hasan Sharifi
IPC分类号： H01L31/0232
CPC分类号： H01L31/1844 , H01L27/14685 , H01L31/02363 , H01L31/035281 , H01L31/1892 , Y02E10/50
摘要： An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.
摘要翻译：具有第一吸收材料的多个离散区域的红外光电检测器。这些区域可以具有倾斜侧壁的几何形状。检测器还可以包括第二吸收体区域，该第二吸收体区域吸收比由第一吸收体材料的多个分立吸收体区域吸收的光更短波长的光的第二吸收体材料。几何形状可仅延伸穿过第一吸收材料。或者，几何形状可以部分地延伸到第二吸收体区域中。检测器具有耦合到多个分立吸收体区域的金属反射器。检测器还具有包含离散吸收区域和第二吸收区域的基板。衬底还可以包括蚀刻到衬底中的几何形状特征，其中这些特征形成在衬底的与包含离散吸收体区域和第二吸收体区域的侧面相反的一侧。

10. 发明申请

US20090102061A1 Self-Aligned Wafer Level Integration System 审中-公开
标题翻译：自对准晶圆级集成系统
公开(公告)号：US20090102061A1
公开(公告)日：2009-04-23
申请号：US12324289
申请日：2008-11-26
申请人： Hasan Sharifi , Saeed Mohammadi , Linda P.B. Katehi
发明人： Hasan Sharifi , Saeed Mohammadi , Linda P.B. Katehi
IPC分类号： H01L25/065
CPC分类号： H01L21/6835 , H01L21/568 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/82 , H01L25/0655 , H01L25/50 , H01L2221/68345 , H01L2224/04105 , H01L2224/24137 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/15787 , H01L2924/30105 , H01L2924/00
摘要： A polymer-based, self-aligned wafer-level heterogeneous integration system, SAWLIT, for integrating semiconductor integrated circuit (IC) chips to a substrate is presented. The system includes a method including preparing a substrate, flipping the substrate onto a polymer-based flat surface and securing the substrate to the flat surface, mounting semiconductor chips into the prepared substrate, integrating the chips to the substrate with another polymer-based material, and removing the resulting multi-chip module from the flat surface. The chips may then be connected with each other and regions off the multi-chip module with metal interconnect processing technology.A multi-chip module prepared by the polymer-based, self-aligned heterogeneous integration system including semiconductor chips mounted in a prepared substrate. The chips may be connected to the substrate by a polymer-based integrating material.
摘要翻译：提出了一种用于将半导体集成电路（IC）芯片集成到衬底的基于聚合物的自对准晶片级异构集成系统（SAWLIT）。该系统包括一种方法，包括制备基板，将基板翻转到基于聚合物的平坦表面上并将基板固定到平坦表面上，将半导体芯片安装到制备的基板中，将芯片与另一种聚合物基材料集成到基板上，并从平坦表面移除所得到的多芯片模块。然后可以利用金属互连处理技术将芯片彼此连接并且将多个芯片模块的区域连接。通过基于聚合物的自对准异相集成系统制备的多芯片模块，其包括安装在制备的基板中的半导体芯片。芯片可以通过基于聚合物的一体化材料连接到基板。

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