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    • 1. 发明授权
    • Phenylpiperazine derivatives and their acid addition salts
    • 苯基哌嗪衍生物及其酸加成盐
    • US4716161A
    • 1987-12-29
    • US719456
    • 1985-04-03
    • Harukazu FukamiRyoji KikumotoKenichiro NakaoIssei NittaShinya Inoue
    • Harukazu FukamiRyoji KikumotoKenichiro NakaoIssei NittaShinya Inoue
    • C07D239/96C07D285/32C07D491/04C07D491/056C07D513/04A61K31/54C07D417/06
    • C07D491/04C07D239/96C07D285/32C07D513/04
    • A phenylpiperazine derivative according to the present invention has the following general formula [I]: ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are independently hydrogen or alkoxy group having 1 to 3 carbon atoms, orR.sup.1 and R.sup.2 or R.sup.2 and R.sup.3 together with carbon atoms to which they are attached form --O(CH.sub.2).sub.m O-- wherein m is an integer of 1 to 3, oreither R.sup.1 or R.sup.2 is amine residue selected from the group consisting of --NH.sub.2 , --NHSO.sub.2 CH.sub.3, --NHCOCH.sub.3 and --NHCONH.sub.2 and the other is hydrogen or alkoxy group of 1 to 3 carbon atoms and R.sup.3 is hydrogen;R.sup.4 and R.sup.5 are independently hydrogen or alkyl group of 1 to 3 carbon atoms;Y is --CO-- or --SO.sub.2 -- provided that at least one of R.sup.1 and R.sup.2 is not hydrogen when Y is --CO--; andn is an integer of 2 to 4.An acid addition salt of the phenylpiperazine derivative having the general formula [I] is included in the present invention. The phenylpiperazine derivative as well as its acid addition salt according to the present invention have the ability to reduce the blood pressure.
    • 根据本发明的苯基哌嗪衍生物具有以下通式[I]:其中R 1,R 2和R 3独立地是氢或具有1至3个碳原子的烷氧基,或者R 1和R 2或R 2和R 3 与其连接的碳原子一起形成-O(CH 2)m O-,其中m是1至3的整数,或者R 1或R 2是选自-NH 2,-NHSO 2 CH 3,-NHCOCH 3和 -NHCONH 2,另一个是1或3个碳原子的氢或烷氧基,R 3是氢; R4和R5独立地是氢或1〜3个碳原子的烷基; Y是-CO-或-SO 2 - ,条件是当Y是-CO-时,R 1和R 2中的至少一个不是氢; n为2〜4的整数。本发明包括具有通式[I]的苯基哌嗪衍生物的酸加成盐。 根据本发明的苯基哌嗪衍生物及其酸加成盐具有降低血压的能力。
    • 6. 发明授权
    • Front vehicle body structure
    • 前车身结构
    • US08789874B2
    • 2014-07-29
    • US13431040
    • 2012-03-27
    • Jyunya OkamuraTakehisa TsukadaKouichi ImamuraTakatomo WatamoriShinya Inoue
    • Jyunya OkamuraTakehisa TsukadaKouichi ImamuraTakatomo WatamoriShinya Inoue
    • B62D25/08B60R19/34
    • B62D25/082B60K11/04B60R19/12B60R19/34B62D21/152
    • There is provided a front vehicle body structure. A radiator panel lower is mounted between front ends of side frames, crash boxes at the front ends of the side frames, and a bumper beam between front ends of the crash boxes. The radiator panel lower includes a bracket offset toward the inside in the vehicle width direction from the side frame. Upon an offset front collision, a shock load is absorbed by an axial compression deformation of one of the crash boxes and a drag of the side frames. Upon a full-overlap front collision, the right and left crash boxes are subjected to the axial compression deformation, and the shock load is input to the bracket, thereby bending the side frames. Accordingly, and a sufficient axial compression deformation of the crash boxes is secured, and the shock load is absorbed by the reduction in the drag of the side frames.
    • 提供前车身结构。 散热器面板下部安装在侧框架的前端之间,侧框架前端的碰撞盒以及碰撞箱前端之间的保险杠。 散热器面板下部包括从侧框架向车宽方向向内侧偏移的支架。 在偏移前方碰撞时,冲击载荷被碰撞盒中的一个的轴向压缩变形和侧框的拖动所吸收。 在完全重叠的前碰撞时,左右碰撞箱受到轴向压缩变形,并且冲击载荷被输入到支架,从而弯曲侧框架。 因此,确保了碰撞箱的足够的轴向压缩变形,并且通过减少侧框架的阻力来吸收冲击载荷。
    • 7. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08698236B2
    • 2014-04-15
    • US13303850
    • 2011-11-23
    • Yasuhiro TakedaShinya InoueYuzo Otsuru
    • Yasuhiro TakedaShinya InoueYuzo Otsuru
    • H01L29/78
    • H01L29/7816H01L29/086H01L29/0878H01L29/1083H01L29/1095H01L29/42368H01L29/456H01L29/4933H01L29/66689
    • The invention provides an LDMOS transistor of which the time-dependent degrading of the performance due to the trapping of hot electrons in the gate insulation film is decreased. A body layer is disposed in a surface portion of an N−− type semiconductor layer. A source layer including an N− type layer is disposed in a surface portion of the body layer. An N− type drift layer is formed in a surface portion of the N−− type semiconductor layer. This drift layer includes a first region having a first N type impurity concentration peak region and a second region having a second N type impurity concentration peak region that is positioned deeper than the first N type impurity concentration peak region, the second region adjoining this first region. An N+ type drain layer is formed in a surface portion of the second region.
    • 本发明提供了一种LDMOS晶体管,其中由于在栅极绝缘膜中捕获热电子而导致的性能的时间依赖性降低。 体层设置在N-型半导体层的表面部分中。 包括N型层的源极层设置在主体层的表面部分中。 N-型漂移层形成在N-型半导体层的表面部分中。 该漂移层包括具有第一N型杂质浓度峰值区域的第一区域和位于比第一N型杂质浓度峰值区域更深的第二N型杂质浓度峰值区域的第二区域,与该第一区域相邻的第二区域 。 在第二区域的表面部分中形成N +型漏极层。