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1. 发明申请

US20050272271A1 Semiconductor processing method for processing substrate to be processed and its apparatus 审中-公开
标题翻译：用于处理待处理衬底的半导体加工方法及其装置
公开(公告)号：US20050272271A1
公开(公告)日：2005-12-08
申请号：US10523974
申请日：2004-02-04
申请人： Haruhiko Furuya , Yuihiro Morozumi , Hiroaki Ikegawa , Makoto Hirayama , Yuichi Ito
发明人： Haruhiko Furuya , Yuihiro Morozumi , Hiroaki Ikegawa , Makoto Hirayama , Yuichi Ito
IPC分类号： C23C16/44 , H01L21/30 , H01L21/31 , H01L21/46 , H01L21/469
CPC分类号： C23C16/44
摘要： A method for processing a target substrate (10) in a semiconductor processing apparatus (1) controls temperature of a first substrate (10) at a process temperature inside a process container (2), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which a by-product film is formed inside the process container. After the semiconductor process and unload of the first substrate (10) out of the process container (2), a reforming gas is supplied into the process container, thereby subjecting the by-product film to a reformation process, which is set to reduce thermal reflectivity of the by-product film. After the reformation process, temperature of a second substrate (10) is controlled at the process temperature inside the process container (2), while supplying the process gas into the process container, thereby subjecting the second substrate to the semiconductor process.
摘要翻译：在半导体处理装置（1）中处理目标衬底（10）的方法在处理容器（2）内的处理温度下控制第一衬底（10）的温度，同时将处理气体供应到处理容器中，从而使第一基板经受半导体工艺，在该过程中，在处理容器内部形成副产物膜。在半导体处理和将第一基板（10）从工艺容器（2）中卸载之后，将重整气体供给到处理容器中，从而使副产物膜进行重整过程，该过程设定为减少热副产品薄膜的反射率。在改造过程之后，在处理容器（2）内的处理温度下控制第二基板（10）的温度，同时将处理气体供应到处理容器中，从而使第二基板进行半导体处理。

2. 发明授权

US5500388A Heat treatment process for wafers 失效
标题翻译：晶圆热处理工艺
公开(公告)号：US5500388A
公开(公告)日：1996-03-19
申请号：US202457
申请日：1994-02-28
申请人： Reiji Niino , Tomoyuki Ohbu , Hiroaki Ikegawa , Ken Nakao , Yoshiyuki Fujita , Tsutomu Haraoka , Makoto Kobayashi , Naoya Kaneda , Hiroshi Kumada
发明人： Reiji Niino , Tomoyuki Ohbu , Hiroaki Ikegawa , Ken Nakao , Yoshiyuki Fujita , Tsutomu Haraoka , Makoto Kobayashi , Naoya Kaneda , Hiroshi Kumada
IPC分类号： C23C16/46 , H01L21/20 , H01L21/285
CPC分类号： C23C16/463 , C23C16/46 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28512
摘要： In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers. This suppresses the growth of a natural oxidation film and improves characteristics of a semiconductor device. The same principle may apply to an oxide film formation and an impurity dispersion.
摘要翻译：为了在半导体晶片的表面上形成薄膜，将多个晶片分别安装在晶片舟的环形安装件上，同时将反应管内的温度设定为例如400℃ 氮气气氛。在将晶片舟装载到反应管中之后，以例如100℃/ min的速率将反应管内的温度升高至例如620℃，并将SiH 4气体供应到硅衬底以形成多晶硅膜。成膜后，迫使空气沿加热部的内表面流动，强制冷却反应管的内部。在使用具有硅衬底和形成在硅衬底的表面上的金属膜的晶片形成金属硅膜的情况下，将反应管内的温度设定为例如 100℃，用于装载晶片。这抑制了天然氧化膜的生长，并提高了半导体器件的特性。相同的原理可能适用于氧化膜形成和杂质分散。

3. 发明申请

US20050142716A1 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium 有权
标题翻译：制造半导体器件，成膜设备和存储介质的方法
公开(公告)号：US20050142716A1
公开(公告)日：2005-06-30
申请号：US10976320
申请日：2004-10-29
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/336 , H01L21/28 , H01L29/51 , H01L29/78
CPC分类号： H01L29/513 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.
摘要翻译：在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。在氧化硅膜上形成作为栅电极的多晶硅膜。

4. 发明申请

US20060216953A1 Method of forming film and film forming apparatus 审中-公开
标题翻译：薄膜成膜装置的形成方法
公开(公告)号：US20060216953A1
公开(公告)日：2006-09-28
申请号：US10552468
申请日：2004-04-08
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02211 , H01L21/02271 , H01L21/31645
摘要： The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.
摘要翻译：本发明的目的是提高可以有效地用作MOSFET的栅极氧化膜的高介电常数膜的铪化合物膜的结晶温度。通过使铪有机化合物的蒸气与甲硅烷气体或乙硅烷气体在加热的真空气氛中在反应容器中反应，将硅酸铪膜沉积在基材上。由于硅的结晶抑制效果，所得到的膜具有较高的结晶温度。在本发明的另一个实施方案中，将含氧铪化合物膜在加热的氨气气氛中退火。退火还增加含氧铪复合膜的结晶温度。

5. 发明授权

US07084023B2 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium 有权
标题翻译：制造半导体器件，成膜设备和存储介质的方法
公开(公告)号：US07084023B2
公开(公告)日：2006-08-01
申请号：US10976320
申请日：2004-10-29
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/513 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.
摘要翻译：在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。在氧化硅膜上形成作为栅电极的多晶硅膜。

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