专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110186119A1 Light-trapping plasmonic back reflector design for solar cells 审中-公开
标题翻译：用于太阳能电池的光俘获等离子体反射器设计
公开(公告)号：US20110186119A1
公开(公告)日：2011-08-04
申请号：US12928964
申请日：2010-12-23
申请人： Harry A. Atwater , Vivian Ferry , Albert Polman , Ruud Schropp , Marc Verschuuren
发明人： Harry A. Atwater , Vivian Ferry , Albert Polman , Ruud Schropp , Marc Verschuuren
IPC分类号： H01L31/0232 , H01L31/0352
CPC分类号： H01L31/0232 , H01L31/022425 , H01L31/02366 , H01L31/0352 , H01L31/056 , Y02E10/52
摘要： A solar cell includes a nano-scale patterned back contact layer; a spacer layer on the nano-scale patterned back contact layer; a semiconductor layer on the spacer layer; and a light transmissive first electrode on the semiconductor layer.
摘要翻译：太阳能电池包括纳米级图案化的背接触层; 在纳米尺度图案化的背接触层上的间隔层; 间隔层上的半导体层; 以及半导体层上的透光第一电极。

2. 发明授权

US09455146B2 Virtual substrates for epitaxial growth and methods of making the same 有权
标题翻译：用于外延生长的虚拟衬底及其制造方法
公开(公告)号：US09455146B2
公开(公告)日：2016-09-27
申请号：US12928762
申请日：2010-12-17
申请人： Harry A. Atwater , Marina S. Leite , Emily C. Warmann , Dennis M. Callahan
发明人： Harry A. Atwater , Marina S. Leite , Emily C. Warmann , Dennis M. Callahan
IPC分类号： H01L29/06 , H01L21/18
CPC分类号： H01L21/187
摘要： A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
摘要翻译：虚拟衬底包括手柄支撑件和手柄支撑件上的应变消除的单晶层。制造虚拟衬底的方法包括在初始生长衬底上生长相干应变的单晶层，去除初始生长衬底以减轻单晶层上的应变，并将应变消除的单晶层施加在手柄支撑件上。

3. 发明授权

US08808933B2 Semiconductor wire array structures, and solar cells and photodetectors based on such structures 有权
标题翻译：半导体线阵列结构，以及基于这种结构的太阳能电池和光电探测器
公开(公告)号：US08808933B2
公开(公告)日：2014-08-19
申请号：US12957065
申请日：2010-11-30
申请人： Michael D. Kelzenberg , Harry A. Atwater , Ryan M. Briggs , Shannon W. Boettcher , Nathan S. Lewis , Jan A. Petykiewicz
发明人： Michael D. Kelzenberg , Harry A. Atwater , Ryan M. Briggs , Shannon W. Boettcher , Nathan S. Lewis , Jan A. Petykiewicz
IPC分类号： H01M6/30 , H01L31/0232 , H01L31/0236 , H01L31/052 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L31/068
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.
摘要翻译：描述了包括半导体结构阵列，半导体材料之间的填充材料和一个或多个光俘获元件的结构。基于这种结构的光转换器和光电化学装置也被描述。

4. 发明申请

US20130298985A1 MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS 审中-公开
标题翻译：微电子结构包括铜氧化物半导体并具有改进的P-N异质结
公开(公告)号：US20130298985A1
公开(公告)日：2013-11-14
申请号：US13876652
申请日：2011-09-29
申请人： Davis S. Darvish , Harry A. Atwater
发明人： Davis S. Darvish , Harry A. Atwater
IPC分类号： H01L21/02 , H01L31/0336 , H01L29/24
CPC分类号： H01L21/02565 , C30B23/04 , C30B29/16 , H01L29/242 , H01L31/0336 , H01L31/03365 , H01L31/072 , H01L33/005 , Y02E10/50
摘要： The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.
摘要翻译：本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件，填充因子，效率，电流密度等。

5. 发明申请

US20130240026A1 PHOTOVOLTAIC SEMICONDUCTIVE MATERIALS 审中-公开
标题翻译：光伏半导体材料
公开(公告)号：US20130240026A1
公开(公告)日：2013-09-19
申请号：US13602115
申请日：2012-09-01
申请人： Harry A. Atwater , Naomi Coronel , Lise Lahourcade
发明人： Harry A. Atwater , Naomi Coronel , Lise Lahourcade
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/032 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02521 , H01L21/02631 , H01L31/072 , H01L31/18 , Y02E10/50
摘要： The disclosure provides semiconductive material derived from group IV elements that are useful for photovoltaic applications.
摘要翻译：本公开提供衍生自可用于光伏应用的IV族元素的半导体材料。

6. 发明授权

US08507307B2 Group IIB/VA semiconductors suitable for use in photovoltaic devices 有权
标题翻译：适用于光伏器件的IIB / VA系列半导体
公开(公告)号：US08507307B2
公开(公告)日：2013-08-13
申请号：US13160681
申请日：2011-06-15
申请人： Gregory M. Kimball , Marty W. DeGroot , Nathan S. Lewis , Harry A. Atwater
发明人： Gregory M. Kimball , Marty W. DeGroot , Nathan S. Lewis , Harry A. Atwater
IPC分类号： H01L31/109
CPC分类号： H01L31/18 , H01L31/032 , H01L31/0321 , H01L31/068 , Y02E10/547
摘要： The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).
摘要翻译：本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体物种），其与并入作为晶格取代基的IIB / VA族半导体中的至少一种VA族物质具有充分的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族半导体以其他方式，例如，作为掺杂剂等）。

7. 发明申请

US20090057839A1 POLYMER-EMBEDDED SEMICONDUCTOR ROD ARRAYS 有权
标题翻译：聚合物嵌入式半导体阵列阵列
公开(公告)号：US20090057839A1
公开(公告)日：2009-03-05
申请号：US12176065
申请日：2008-07-18
申请人： Nathan S. LEWIS , Katherine E. Plass , Joshua M. Spurgeon , Harry A. Atwater
发明人： Nathan S. LEWIS , Katherine E. Plass , Joshua M. Spurgeon , Harry A. Atwater
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such a structure include forming the semiconductor structures on a substrate, casting a binder material onto the substrate to embed the semiconductor structures in the binder material, and separating the binder material from the substrate at the substrate. These methods provide for the retention of the orientation and order of highly ordered semiconductor structures in the separated binder material.
摘要翻译：由嵌入在粘合剂材料中的有序半导体结构组成的结构，其维持半导体结构的排序和取向。用于形成这种结构的方法包括在基底上形成半导体结构，将粘合剂材料浇铸到基底上以将半导体结构嵌入粘合剂材料中，并在基片上将粘合剂材料与基底分离。这些方法提供了在分离的粘合剂材料中保持高度有序的半导体结构的取向和顺序。

8. 发明授权

US07346248B2 Ferroelectric nanophotonic materials and devices 有权
标题翻译：铁电纳米光子材料和器件
公开(公告)号：US07346248B2
公开(公告)日：2008-03-18
申请号：US11497935
申请日：2006-08-01
申请人： Harry A. Atwater , Kaushik Bhattacharya , Kaushik Dayal , Matthew Dicken , Demetri Psaltis , Axel Scherer , Guruswami Ravichandran
发明人： Harry A. Atwater , Kaushik Bhattacharya , Kaushik Dayal , Matthew Dicken , Demetri Psaltis , Axel Scherer , Guruswami Ravichandran
IPC分类号： G02B6/00
CPC分类号： G02F1/03 , B82Y20/00 , G02B6/3574 , G02F2202/32
摘要： Systems and methods for manipulating light with tunable ferroelectric photonic devices. Devices having tunable properties that exhibit photonic bandgap behavior are fabricated from ferroelectric materials. Apparatus is provided to apply tuning signals to the ferroelectric material using one or more of electric fields, mechanical forces, optical fields, and thermal fields. Control circuitry is provided to generate the control signals needed to apply the tuning signals. Input and output ports are provided to allow input signals to be received and to provide output signals. In some cases, a feedback loop is provided to use a portion of the output signal as a diagnostic signal for control of the operation of the device within an acceptable range. It is expected that ferroelectric photonic devices operating according to principles of the invention will be useful for a wide variety of applications, including optical switching, optical modulation, optical computing, and performing logic optically.
摘要翻译：用可调谐铁电光子器件操纵光的系统和方法。具有光子带隙特性的具有可调谐特性的器件由铁电材料制成。提供了使用电场，机械力，光场和热场中的一个或多个来将调谐信号施加到铁电材料的装置。提供控制电路以产生应用调谐信号所需的控制信号。提供输入和输出端口以允许接收输入信号并提供输出信号。在一些情况下，提供反馈回路以使用输出信号的一部分作为用于在可接受范围内控制装置的操作的诊断信号。期望根据本发明的原理操作的铁电光子器件对于各种应用（包括光学开关，光学调制，光学计算和光学执行逻辑）将是有用的。

9. 发明授权

US5707466A Method and apparatus for selectively annealing heterostructures using microwave 失效
标题翻译：使用微波选择性退火异质结构的方法和装置
公开(公告)号：US5707466A
公开(公告)日：1998-01-13
申请号：US415073
申请日：1995-03-31
申请人： Harry A. Atwater , Ruth A. Brain , Martin B. Barmatz
发明人： Harry A. Atwater , Ruth A. Brain , Martin B. Barmatz
IPC分类号： H01L21/3105 , H01L21/321 , H01L21/324
CPC分类号： H01L21/31051 , H01L21/32115
摘要： The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.
摘要翻译：本发明公开了一种使用微波选择性退火异质结构的方法。由具有较高微波吸收的材料和具有较低微波吸收的材料组成的异质结构暴露于空腔中的微波。较高的微波吸收材料吸收微波并选择性加热，而较低的微波吸收材料吸收少量的微波和最少的热量。因此，较高的微波吸收材料被退火到热隔离的较少吸收材料上。

10. 发明授权

US09356183B1 Optoelectronic device with enhanced efficiency and method of use 有权
标题翻译：光电子器件具有更高的效率和使用方法
公开(公告)号：US09356183B1
公开(公告)日：2016-05-31
申请号：US13528721
申请日：2012-06-20
申请人： Matthew Sheldon , Carissa N. Eisler , Harry A. Atwater
发明人： Matthew Sheldon , Carissa N. Eisler , Harry A. Atwater
IPC分类号： B82Y30/00 , H01L21/314 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1868 , H01L31/0216 , H01L31/02167 , H01L31/0445 , H01L31/0735 , H01L31/18 , Y02E10/544 , Y02P70/521
摘要： A compound III/V optoelectronic device and method associated with such a device is disclosed. In one aspect, a method for an improved III/V compound optoelectronic device is disclosed. The method comprises applying a sulfur surfactant on the III/V compound optoelectronic device to improve passivation of the III/V compound optoelectronic device. In a second aspect, a III/V compound optoelectronic device is disclosed. The III/V compound optoelectronic device comprises a thin film device with a III/V compound semiconductor absorbing material, and a sulfur surfactant on the III/V compound thin film device to improve passivation of the III/V compound optoelectronic device.
摘要翻译：公开了与这种装置相关联的复合III / V光电子器件和方法。一方面，公开了一种改进的III / V复合光电器件的方法。该方法包括在III / V复合光电子器件上施加硫表面活性剂以改善III / V复合光电器件的钝化。在第二方面，公开了一种III / V复合光电器件。 III / V复合光电子器件包括具有III / V化合物半导体吸收材料的薄膜器件和在III / V复合薄膜器件上的硫表面活性剂，以改善III / V复合光电器件的钝化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式