发明申请
US20130298985A1 MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS
审中-公开
基本信息:
- 专利标题： MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS
- 专利标题（中）：微电子结构包括铜氧化物半导体并具有改进的P-N异质结
- 申请号：US13876652 申请日：2011-09-29
- 公开(公告)号：US20130298985A1 公开(公告)日：2013-11-14
- 发明人： Davis S. Darvish , Harry A. Atwater
- 申请人： Davis S. Darvish , Harry A. Atwater
- 申请人地址： US CA Pasadena
- 专利权人： California Institute of Technology
- 当前专利权人： California Institute of Technology
- 当前专利权人地址： US CA Pasadena
- 国际申请： PCT/US2011/053814 WO 20110929
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L31/0336 ; H01L29/24
摘要：
The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.
摘要（中）：
本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。 当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件， 填充因子，效率，电流密度等。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |